STGD3NB60SD-1 Equivalent & Substitute Parts

Part Overview

The STGD3NB60SD-1 is a 600V, 6A IGBT manufactured by STMicroelectronics in the PowerMESH™ series, housed in a TO-252-3 DPAK surface mount package. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the same package footprint.

Substiute Parts

STGD3NB60SD-1
STMicroelectronicsIn Stock: 1130STGD3NB60SD-1 Datasheet
STGD3NB60SD-1
Current Part
IKD03N60RFATMA1
Infineon TechnologiesIn Stock: 2901IKD03N60RFATMA1 Datasheet
IKD03N60RFATMA1
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 6 A
Power - Max 48 W
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 3A V
Gate Charge 18 nC
Operating Temperature (TJ) 175 °C
Package / Case TO-252-3, DPAK -
Mounting Type Surface Mount -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the STGD3NB60SD-1 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage rating: 600V collector-emitter breakdown voltage
  • Current capacity: Minimum 6A continuous collector current
  • Package compatibility: TO-252-3 DPAK surface mount footprint
  • Input type: Standard gate drive configuration
  • Thermal capability: Operating temperature to 175°C junction temperature
  • Regulatory compliance: ROHS3 compliance and EAR99 classification

The IKD03N60RFATMA1 from Infineon Technologies qualifies as a substitute based on matching all critical parameters. Both devices share identical voltage ratings, compatible current specifications, and identical package geometry. The substitute maintains standard input type configuration and exceeds thermal operating range requirements.

Parameter Comparison

Parameter STGD3NB60SD-1 (STMicroelectronics) IKD03N60RFATMA1 (Infineon Technologies) Unit
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 6 6.5 A
Power - Max 48 53.6 W
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 3A 2.5V @ 15V, 2.5A V
Gate Charge 18 17.1 nC
Operating Temperature (TJ) 175 175 °C
Package / Case TO-252-3, DPAK TO-252-3, DPAK -
Mounting Type Surface Mount Surface Mount -
Input Type Standard Standard -
RoHS Status ROHS3 Compliant ROHS3 Compliant -

Engineering Selection Recommendations

Product Status Consideration: The STGD3NB60SD-1 carries obsolete status, making the IKD03N60RFATMA1 the appropriate selection for new designs and production continuity. The substitute maintains active product status with Infineon Technologies, ensuring long-term availability and supply chain stability.

Compliance Alignment: Both components achieve ROHS3 compliance and carry EAR99 ECCN classification, satisfying regulatory requirements for equivalent substitution. The IKD03N60RFATMA1 demonstrates superior moisture sensitivity rating (MSL 1 versus MSL 3), providing enhanced reliability in storage and handling environments.

Electrical Compatibility: The IKD03N60RFATMA1 exceeds the current specification of the original part (6.5A versus 6A) while maintaining identical voltage ratings. Gate charge values remain within 5% variance (17.1nC versus 18nC), ensuring compatible gate drive circuit performance. Both devices operate to 175°C junction temperature, supporting identical thermal design parameters.

Package and Mounting: Identical TO-252-3 DPAK packaging ensures direct PCB footprint compatibility without layout modifications. Surface mount configuration remains unchanged, supporting existing assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the IKD03N60RFATMA1 directly replace the STGD3NB60SD-1 on existing PCBs?

A: Yes. Both components utilize identical TO-252-3 DPAK package geometry with matching pin configuration. No PCB layout modifications are required for direct substitution.

Q: What are the key electrical differences between these parts?

A: The IKD03N60RFATMA1 provides higher continuous current capacity (6.5A versus 6A) and increased power dissipation capability (53.6W versus 48W). Gate charge remains nearly equivalent (17.1nC versus 18nC). Both maintain 600V voltage rating and 175°C maximum junction temperature.

Q: Are there gate drive circuit considerations for substitution?

A: Both devices feature standard input type configuration with compatible gate charge specifications. Gate drive circuits designed for the STGD3NB60SD-1 operate without modification for the IKD03N60RFATMA1.

Q: How do the switching characteristics compare?

A: The IKD03N60RFATMA1 employs Trench Field Stop technology, resulting in significantly faster switching times (10ns/128ns on/off versus 125µs/3.4µs) and reduced reverse recovery time (31ns versus 1.7µs). These improvements reduce switching losses in high-frequency applications.

Q: What is the moisture sensitivity difference?

A: The STGD3NB60SD-1 carries MSL 3 rating (168-hour floor life), while the IKD03N60RFATMA1 carries MSL 1 rating (unlimited floor life). The substitute provides superior moisture tolerance, reducing bake-out requirements and extending shelf life.

Q: Are both components RoHS compliant?

A: Yes. Both the STGD3NB60SD-1 and IKD03N60RFATMA1 achieve ROHS3 compliance, satisfying environmental and regulatory requirements for equivalent substitution.

Q: What is the availability status of each component?

A: The STGD3NB60SD-1 is classified as obsolete. The IKD03N60RFATMA1 maintains active product status with Infineon Technologies, ensuring continued availability and supply chain support.

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