STFV3N150 Equivalent & Substitute Parts

Part Overview

The STFV3N150 is an N-Channel MOSFET rated for 1500 V drain-to-source voltage with a continuous drain current of 2.5 A at 25°C. This device is packaged in a TO-220-3 configuration and is designed for high-voltage switching applications requiring 30 W maximum power dissipation. The STFV3N150 carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1500	V
Continuous Drain Current (Id) @ 25°C	2.5	A (Tc)
Rds On (Max) @ Id, Vgs	9	Ohm @ 1.3A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	29.3	nC @ 10 V
Input Capacitance (Ciss) @ Vds	939	pF @ 25 V
Power Dissipation (Max)	30	W (Tc)
Operating Temperature (TJ)	150	°C
Package Type	TO-220-3	Through Hole
Series	PowerMESH™

Substitute Part Grouping Explanation

Substitution of the STFV3N150 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 1500 V
Continuous Drain Current (Id) @ 25°C: 2.5 A (Tc)
Gate Threshold Voltage (Vgs(th)): 5 V @ 250µA
Rds On (Max): 9 Ohm @ 1.3A, 10V
Gate Charge (Qg): 29.3 nC @ 10 V
Input Capacitance (Ciss): 939 pF @ 25 V
Maximum Gate Voltage (Vgs): ±30 V
Operating Temperature: 150°C (TJ)
FET Type: N-Channel MOSFET
Technology: Metal Oxide
Manufacturer: STMicroelectronics
Series: PowerMESH™

The STFV3N150 belongs to the PowerMESH™ series of high-voltage MOSFETs. Substitute parts must maintain identical electrical specifications across all critical parameters to ensure functional compatibility in existing circuit designs. Package type differences are noted but do not preclude substitution when mechanical constraints permit.

Parameter Comparison

Parameter	STFV3N150	STFW3N150	Unit
Drain to Source Voltage (Vdss)	1500	1500	V
Continuous Drain Current (Id) @ 25°C	2.5	2.5	A (Tc)
Rds On (Max) @ Id, Vgs	9	9	Ohm @ 1.3A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	5	V @ 250µA
Gate Charge (Qg) @ Vgs	29.3	29.3	nC @ 10 V
Input Capacitance (Ciss) @ Vds	939	939	pF @ 25 V
Maximum Gate Voltage (Vgs)	±30	±30	V
Operating Temperature (TJ)	150	150	°C
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Manufacturer	STMicroelectronics	STMicroelectronics
Series	PowerMESH™	PowerMESH™
Package Type	TO-220-3	TO-3PF
Power Dissipation (Max)	30	63	W (Tc)
Product Status	Obsolete	Active

Engineering Selection Recommendations

The STFV3N150 is classified as Obsolete. The STFW3N150 is the equivalent substitute part and carries Active product status from STMicroelectronics.

Electrical Equivalence: The STFW3N150 maintains identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance. Both devices are manufactured by STMicroelectronics within the PowerMESH™ series and comply with ROHS3 and REACH requirements.

Mechanical Differences: The primary distinction between these parts is packaging. The STFV3N150 uses TO-220-3 (Full Pack, Isolated Tab) while the STFW3N150 uses TO-3PF (Full Pack). This packaging difference requires verification of mechanical fit within the target application's printed circuit board layout and thermal management design.

Thermal Performance: The STFW3N150 offers enhanced power dissipation capability at 63 W (Tc) compared to the STFV3N150 at 30 W (Tc). This represents an improvement in thermal performance and does not restrict substitution in applications designed for the lower-rated device.

Procurement Status: The STFW3N150 maintains active inventory status with 35,100 units available, ensuring reliable long-term supply compared to the obsolete STFV3N150.

Frequently Asked Questions (FAQ)

Q: Can the STFW3N150 directly replace the STFV3N150 in existing designs?

A: Electrical substitution is valid. All critical electrical parameters are identical. Mechanical substitution requires verification that the TO-3PF package fits the existing PCB layout and thermal management system designed for TO-220-3.

Q: What are the key electrical parameters that must match for substitution?

A: Drain-to-source voltage (1500 V), continuous drain current (2.5 A), on-resistance (9 Ohm @ 1.3A, 10V), gate threshold voltage (5 V @ 250µA), gate charge (29.3 nC @ 10 V), and input capacitance (939 pF @ 25 V) must all remain constant.

Q: Why does the STFW3N150 have higher power dissipation rating?

A: The STFW3N150 uses the TO-3PF package, which provides superior thermal characteristics compared to the TO-220-3 package. This allows the device to safely dissipate 63 W versus 30 W. The higher rating does not affect circuit operation and represents an improvement for thermal-constrained applications.

Q: Are there compliance or certification differences between these parts?

A: Both parts are ROHS3 Compliant, REACH Unaffected, and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Moisture Sensitivity Level is 1 (Unlimited) for both devices.

Q: What is the primary reason to substitute the STFV3N150?

A: The STFV3N150 carries Obsolete product status. The STFW3N150 is the active equivalent from STMicroelectronics, ensuring continued availability and supply chain reliability.

Q: Do gate drive requirements differ between these parts?

A: No. Both devices require 10 V drive voltage for maximum on-resistance specification and accept maximum gate voltage of ±30 V. Gate charge and input capacitance are identical, requiring no changes to gate driver circuitry.

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