STFU9N65M2 Equivalent & Substitute Parts

Part Overview

The STFU9N65M2 is an N-Channel 650V 5A MOSFET manufactured by STMicroelectronics in the MDmesh™ M2 series. This device is packaged in TO-220FP through-hole configuration and is rated for 20W power dissipation at case temperature. The part is currently in active product status with 1136 units in stock.

Substitute parts are identified based on matching electrical and mechanical parameters within acceptable tolerances for N-Channel MOSFET applications. Alternatives are selected where drain-source voltage, continuous drain current, gate charge characteristics, and through-hole packaging compatibility align with the primary device specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ 2.5A, 10V	900	mOhm
Gate Charge (Qg) @ 10V	10	nC
Vgs(th) (Max) @ 250µA	4	V
Input Capacitance (Ciss) @ 100V	315	pF
Power Dissipation (Max)	20	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package	TO-220-3	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the STFU9N65M2 are grouped based on the following critical electrical and mechanical parameters:

Primary Selection Criteria:

Drain-Source Voltage (Vdss): 600V to 800V range
Continuous Drain Current (Id): 4A to 10A range
Gate Charge (Qg): 10nC to 46nC range
On-State Resistance (Rds On): 900mOhm to 1.11Ohm
Mounting Type: Through Hole
Package Type: TO-220 variants (TO-220F, TO-220FM, TO-220FP, TO-220SIS)
Technology: N-Channel MOSFET
RoHS Compliance: ROHS3 Compliant

Substitution Logic: Parts are considered equivalent when they maintain the same voltage class (650V nominal), support comparable current ratings within the 4A to 10A range, and utilize compatible through-hole TO-220 packaging. Gate charge and on-state resistance characteristics must remain within acceptable operational limits for the intended application. All substitute parts listed maintain ROHS3 compliance and operate within the -55°C to 150°C temperature range or subset thereof.

Parameter Comparison

Parameter	STFU9N65M2	FQPF7N60	R6004ENX	R6004KNX	TK6A65D(STA4,Q,M)	TK10A80E,S4X
Manufacturer	STMicroelectronics	onsemi	Rohm Semiconductor	Rohm Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Vdss (V)	650	600	600	600	650	800
Id @ 25°C (A)	5	4.3	4	4	6	10
Rds On (Max) (mOhm)	900	1000	980	980	1110	1000
Qg @ 10V (nC)	10	38	15	10.2	20	46
Vgs(th) (Max) (V)	4	5	4	5	4	4
Ciss (Max) (pF)	315	1430	250	280	1050	2000
Power Dissipation (Max) (W)	20	48	40	40	45	50
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220FP	TO-220F-3	TO-220FM	TO-220FM	TO-220SIS	TO-220SIS
Product Status	Active	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

R6004KNX (Rohm Semiconductor) provides the closest electrical match to the STFU9N65M2. Both devices share identical 600V/650V voltage class operation, 4A/5A current ratings, and 980mOhm/900mOhm on-state resistance characteristics. Gate charge specifications are nearly equivalent at 10.2nC versus 10nC. The R6004KNX maintains active product status with full temperature range operation (-55°C to 150°C) and ROHS3 compliance. TO-220FM packaging is mechanically compatible with TO-220FP applications.

R6004ENX (Rohm Semiconductor) offers similar electrical performance with 600V/4A ratings and 980mOhm on-state resistance. This part is active and ROHS3 compliant. Operating temperature range extends to 150°C maximum junction temperature. Selection of this part requires verification of the upper temperature limit requirement.

TK6A65D(STA4,Q,M) (Toshiba Semiconductor) matches the 650V voltage class and provides 6A continuous drain current, exceeding the 5A requirement. Gate charge at 20nC is elevated compared to the primary device. This part is active, ROHS3 compliant, and operates across the full -55°C to 150°C range. TO-220SIS packaging is mechanically compatible.

FQPF7N60 (onsemi) operates at 600V with 4.3A current rating. Gate charge is significantly elevated at 38nC, and input capacitance is substantially higher at 1430pF. This part carries obsolete product status and should not be selected for new designs.

TK10A80E,S4X (Toshiba Semiconductor) provides 800V voltage rating and 10A current capability, representing an over-specification for 650V/5A applications. Gate charge and input capacitance are substantially elevated. This part is suitable only where higher voltage or current margins are required.

Frequently Asked Questions (FAQ)

Q: Can R6004KNX directly replace STFU9N65M2 in existing designs?

A: R6004KNX is electrically compatible within the specified parameter ranges. Both devices operate at comparable voltage and current ratings with equivalent on-state resistance and gate charge characteristics. TO-220FM and TO-220FP packages are mechanically interchangeable in through-hole applications. Pin configuration remains identical across all TO-220 variants. Verification of thermal management and PCB layout compatibility is required for specific applications.

Q: What is the significance of the voltage rating difference between 600V and 650V parts?

A: The STFU9N65M2 is rated for 650V drain-source voltage, while R6004ENX and R6004KNX are rated for 600V. Both voltage classes operate within the same application envelope for systems designed for 600V operation. Selection of 650V-rated devices provides additional voltage margin. For applications requiring 650V operation, TK6A65D(STA4,Q,M) maintains the exact voltage specification.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STFU9N65M2 specifies 10nC at 10V gate voltage. R6004KNX matches this specification at 10.2nC. FQPF7N60 specifies 38nC, requiring significantly higher gate drive energy. TK10A80E,S4X specifies 46nC. Higher gate charge increases switching losses and requires higher gate drive current capability. Selection should match the gate drive circuit specifications.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this document maintain ROHS3 compliance status. The STFU9N65M2 is ROHS3 compliant, and all identified substitutes (R6004ENX, R6004KNX, TK6A65D(STA4,Q,M), TK10A80E,S4X, and FQPF7N60) are ROHS3 compliant. REACH status is unaffected for all parts.

Q: What is the impact of input capacitance (Ciss) variation among substitute parts?

A: Input capacitance affects gate drive circuit design and switching speed. The STFU9N65M2 specifies 315pF at 100V. R6004ENX and R6004KNX specify 250pF and 280pF respectively, representing lower capacitance. FQPF7N60 specifies 1430pF and TK10A80E,S4X specifies 2000pF, representing significantly higher capacitance. Higher input capacitance requires greater gate drive current for equivalent switching speed. Gate drive circuit compatibility must be verified for parts with substantially different Ciss values.

Q: Why is FQPF7N60 listed as obsolete?

A: FQPF7N60 carries obsolete product status from onsemi. While electrically functional, obsolete parts face supply discontinuation risk and should not be selected for new designs. Active alternatives such as R6004KNX or TK6A65D(STA4,Q,M) are recommended for long-term design reliability.

Q: Can TK10A80E,S4X be used in applications designed for STFU9N65M2?

A: TK10A80E,S4X provides 800V voltage rating and 10A current capability, exceeding STFU9N65M2 specifications. Over-specification is acceptable from an electrical standpoint. However, elevated gate charge (46nC) and input capacitance (2000pF) require gate drive circuit verification. Thermal management must account for the higher power dissipation rating (50W). Selection is appropriate only where higher voltage or current margins are required.

Q: What packaging considerations apply to TO-220 variant substitution?

A: All substitute parts utilize TO-220 through-hole packaging variants (TO-220F, TO-220FM, TO-220FP, TO-220SIS). These packages maintain identical pin configuration and mechanical footprint compatibility. PCB mounting holes and thermal pad dimensions are standardized across TO-220 variants. Thermal interface material and heatsink mounting remain compatible. No PCB redesign is required for package substitution within the TO-220 family.

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