Equivalent & Substitute Parts Reference for STFU8N60DM2

Part Overview

The STFU8N60DM2 is a N-Channel 600 V 12A MOSFET, packaged in a TO-220FP through-hole case, from STMicroelectronics. It belongs to the MDmesh™ series, designed for efficient switching and high-voltage applications. As this model is designated Obsolete, it is necessary to identify compatible substitute parts with equivalent or superior key electrical and mechanical parameters to ensure continued product development and maintenance.

Substiute Parts

STFU8N60DM2

STMicroelectronicsIn Stock: 1171STFU8N60DM2 Datasheet

Current PartRFQ

STF18N60M2

STMicroelectronicsIn Stock: 68034STF18N60M2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution within the Transistors, FETs, MOSFETs category requires explicit matching of key electrical and mechanical parameters. For N-Channel MOSFETs, these parameters include drain to source voltage (Vdss), continuous drain current (Id), Rds On (Max), gate charge (Qg), threshold voltage (Vgs(th)), input capacitance (Ciss), power dissipation (Pd), mounting type, package, and compliance certifications. Substitute parts are grouped based on strict equivalence in these defined values, ensuring form, fit, and function continuity.

Parameter Comparison

Engineering Selection Recommendations

The STFU8N60DM2 is classified as Obsolete. For applications requiring continued compliance with ROHS3 and similar regulatory requirements, selection should be restricted to substitute parts with matching or superior electrical and mechanical characteristics, retaining certifications such as ROHS3 compliance and base product ECCN statuses. The substitute part STF18N60M2 is Active, conforms to ROHS3, and matches all critical electrical, thermal, and mechanical specifications as provided.

Frequently Asked Questions (FAQ)

Q1: What parameters must match when substituting the STFU8N60DM2 MOSFET?
A1: Drain to source voltage (Vdss), continuous drain current (Id), on-resistance (Rds On), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), power dissipation, mounting type, and package/case must directly match; compliance status such as ROHS3 is also required.

Q2: Is the TO-220FP package of the substitute MOSFET identical to the original?
A2: Both the STFU8N60DM2 and STF18N60M2 are specified in the TO-220FP package, ensuring consistent mechanical fit and mounting.

Q3: Does the substitute part maintain compliance with environmental regulations?
A3: Both STFU8N60DM2 and STF18N60M2 are ROHS3 compliant, maintaining necessary environmental compliance standards.

Q4: Is there any difference in electrical capability between the two MOSFETs?
A4: The substitute STF18N60M2 offers 13A (Tc) continuous drain current versus 12A (Tc) for the STFU8N60DM2. Other key operational parameters, such as maximum voltage and on-resistance, are functionally equivalent.

Q5: Can differences in gate charge or input capacitance affect compatibility?
A5: The gate charge and input capacitance values are closely matched between the parts, in accordance with substitution criteria derived strictly from provided specifications.

Q6: Why is substituting required for the STFU8N60DM2?
A6: The STFU8N60DM2 is listed as Obsolete, necessitating the use of a direct substitute for continued manufacture or maintenance.