STFI15N65M5 N-Channel MOSFET 650V 11A Equivalent & Substitute Parts

Part Overview

The STFI15N65M5 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the MDmesh™ V series and features a TO-281 (I2PAKFP) through-hole package configuration. The STFI15N65M5 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and on-resistance characteristics while accommodating different package options.

Substiute Parts

STFI15N65M5

STMicroelectronicsIn Stock: 2270STFI15N65M5 Datasheet

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STF15N65M5

STMicroelectronicsIn Stock: 35314STF15N65M5 Datasheet

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IPI65R380C6XKSA1

Infineon TechnologiesIn Stock: 1473IPI65R380C6XKSA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STFI15N65M5 are identified based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 650V minimum
• Continuous Drain Current (Id): 11A or greater at 25°C
• Drive Voltage (Max Rds On): 10V
• On-Resistance (Rds On): 340mOhm or lower at specified conditions
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Through-hole mounting capability

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Within ±25V maximum gate voltage specification
• Gate Charge (Qg): Acceptable switching characteristics
• Input Capacitance (Ciss): Acceptable for circuit design
• Operating Temperature: 150°C or higher

Substitute parts may differ in package configuration (TO-220FP, PG-TO262-3) and power dissipation ratings while maintaining the core electrical specifications. Parts are grouped by their ability to function as direct replacements in the same circuit topology.

Parameter Comparison

Engineering Selection Recommendations

STF15N65M5 (STMicroelectronics)

The STF15N65M5 is the primary substitute for the obsolete STFI15N65M5. Both devices are manufactured by STMicroelectronics and share identical electrical specifications including 650V Vdss, 11A continuous drain current, 340mOhm Rds On, and 22nC gate charge. The STF15N65M5 is classified as active product status, ensuring ongoing availability and supply chain continuity. The primary difference is the package configuration: STF15N65M5 uses TO-220FP instead of TO-281 (I2PAKFP). Both packages are through-hole configurations suitable for PCB mounting. The STF15N65M5 maintains full electrical compatibility and is ROHS3 compliant with REACH unaffected status. This part is recommended for direct replacement where PCB layout can accommodate the TO-220FP footprint.

IPI65R380C6XKSA1 (Infineon Technologies)

The IPI65R380C6XKSA1 is an alternative substitute manufactured by Infineon Technologies from the CoolMOS™ series. This device maintains the 650V Vdss rating and provides 10.6A continuous drain current, which is within acceptable tolerance of the 11A specification. The on-resistance is 380mOhm at 3.2A and 10V, representing a 11.8% increase compared to the STFI15N65M5 baseline. The IPI65R380C6XKSA1 features enhanced power dissipation capability at 83W (Tc) versus 30W (Tc) for the original part, providing thermal margin in high-power applications. Gate charge is 39nC at 10V, higher than the 22nC specification of the STFI15N65M5. The device uses PG-TO262-3 package configuration and operates across -55°C to 150°C temperature range. This part is active product status and ROHS3 compliant. Selection of the IPI65R380C6XKSA1 is appropriate where the increased on-resistance and gate charge are acceptable within circuit design parameters and where the enhanced thermal capability provides system-level benefits.

Frequently Asked Questions (FAQ)

Q: Can the STF15N65M5 directly replace the STFI15N65M5 in existing designs?

A: The STF15N65M5 provides complete electrical equivalence to the STFI15N65M5 with identical Vdss, Id, Rds On, and gate charge specifications. The primary consideration is package footprint compatibility. The STFI15N65M5 uses TO-281 (I2PAKFP) package while the STF15N65M5 uses TO-220FP package. Both are through-hole configurations but have different pin layouts and thermal characteristics. PCB layout modification may be required to accommodate the TO-220FP footprint.

Q: What are the key differences between the STF15N65M5 and IPI65R380C6XKSA1?

A: Both devices maintain 650V Vdss rating and are suitable for 650V applications. The STF15N65M5 provides 11A continuous drain current with 340mOhm on-resistance, while the IPI65R380C6XKSA1 provides 10.6A with 380mOhm on-resistance. The IPI65R380C6XKSA1 offers significantly higher power dissipation capability (83W versus 30W) and extended temperature range (-55°C to 150°C). Gate charge differs at 22nC versus 39nC respectively. Package configurations differ: STF15N65M5 uses TO-220FP while IPI65R380C6XKSA1 uses PG-TO262-3.

Q: Is the IPI65R380C6XKSA1 suitable for applications requiring 11A continuous current?

A: The IPI65R380C6XKSA1 is rated for 10.6A continuous drain current at 25°C, which is 3.6% below the 11A specification of the STFI15N65M5. For applications requiring sustained 11A operation, the STF15N65M5 is the preferred substitute. The IPI65R380C6XKSA1 may be acceptable in applications where peak current requirements are 11A but average current remains below 10.6A, subject to thermal analysis and circuit design verification.

Q: Are all three parts RoHS3 compliant?

A: Yes, the STFI15N65M5, STF15N65M5, and IPI65R380C6XKSA1 are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What package considerations apply when selecting a substitute?

A: The STFI15N65M5 (TO-281 I2PAKFP), STF15N65M5 (TO-220FP), and IPI65R380C6XKSA1 (PG-TO262-3) all use through-hole mounting but have different physical dimensions and pin configurations. PCB layout, thermal management requirements, and available board space determine package suitability. The TO-220FP and PG-TO262-3 packages offer different thermal dissipation characteristics and mounting footprints. Mechanical compatibility with existing PCB designs must be verified before part selection.

Q: How do gate charge differences affect circuit performance?

A: The STFI15N65M5 and STF15N65M5 both specify 22nC gate charge at 10V, while the IPI65R380C6XKSA1 specifies 39nC. Higher gate charge increases switching time and driver power requirements. For circuits with existing gate driver designs optimized for 22nC gate charge, the STF15N65M5 maintains compatibility. The IPI65R380C6XKSA1 with 39nC gate charge may require gate driver evaluation to ensure adequate drive capability and switching performance.

Q: What is the significance of the different on-resistance specifications?

A: On-resistance directly affects power dissipation and thermal performance. The STFI15N65M5 and STF15N65M5 specify 340mOhm Rds On at 5.5A and 10V. The IPI65R380C6XKSA1 specifies 380mOhm at 3.2A and 10V. Higher on-resistance increases conduction losses. For applications sensitive to power dissipation, the STF15N65M5 maintains the lower on-resistance specification. The IPI65R380C6XKSA1's higher power dissipation rating (83W) partially compensates for increased on-resistance in thermal-limited applications.