STF9NK80Z Equivalent & Substitute Parts

Part Overview

The STF9NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 7.5A continuous drain current at 25°C. This device is part of the SuperMESH™ series and is housed in a TO-220FP through-hole package. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing system support and new design alternatives.

Substiute Parts

STF9NK80Z

STMicroelectronicsIn Stock: 920STF9NK80Z Datasheet

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FCPF1300N80Z

onsemiIn Stock: 28299FCPF1300N80Z Datasheet

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FCPF1300N80ZYD

Fairchild SemiconductorIn Stock: 1968FCPF1300N80ZYD Datasheet

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IPA80R900P7XKSA1

Infineon TechnologiesIn Stock: 914IPA80R900P7XKSA1 Datasheet

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R8008ANX

Rohm SemiconductorIn Stock: 2267R8008ANX Datasheet

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TK5A60W,S4VX

Toshiba Semiconductor and StorageIn Stock: 900TK5A60W,S4VX Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STF9NK80Z is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
• Continuous Drain Current (Id): Must support the application's current requirements
• On-State Resistance (Rds On): Must be compatible with thermal and efficiency constraints
• Gate Threshold Voltage (Vgs(th)): Must fall within acceptable gate drive voltage ranges
• Package Type: Must be through-hole TO-220 variant for mechanical compatibility
• Operating Temperature Range: Must span -55°C to 150°C minimum
• FET Type: Must be N-Channel MOSFET technology

Substitute Parts Identified:

The following parts meet the 800V Vdss requirement and through-hole TO-220 packaging:

1. FCPF1300N80Z (onsemi) – 800V, 4A, TO-220F-3
2. FCPF1300N80ZYD (Fairchild Semiconductor) – 800V, 4A, TO-220F-3 (Y-Forming)
3. IPA80R900P7XKSA1 (Infineon Technologies) – 800V, 6A, TO-220-3
4. R8008ANX (Rohm Semiconductor) – 800V, 8A, TO-220FM

Lower Voltage Alternative:

1. TK5A60W,S4VX (Toshiba Semiconductor and Storage) – 600V, 5.4A, TO-220SIS

The 600V part is included as a lower-voltage alternative for applications where 800V rating is not required.

Parameter Comparison

Engineering Selection Recommendations

For Direct 800V Replacement with Maintained Current Capability:

The R8008ANX (Rohm Semiconductor) provides the closest current rating match at 8A continuous drain current, exceeding the STF9NK80Z specification of 7.5A. This part is classified as Active and ROHS3 Compliant, making it suitable for new designs. The R8008ANX offers superior power dissipation capability at 50W and lower on-state resistance at 1.03Ohm, providing improved thermal performance in high-current applications.

For 800V Replacement with Reduced Current Capability:

The IPA80R900P7XKSA1 (Infineon Technologies CoolMOS™ P7 series) is classified as Active and ROHS3 Compliant. This part operates at 6A continuous drain current, which is lower than the STF9NK80Z but offers significantly lower on-state resistance at 0.9Ohm and reduced gate charge at 15nC. This configuration is advantageous for applications where switching losses and gate drive power are critical design factors.

The FCPF1300N80Z and FCPF1300N80ZYD (both rated 800V, 4A) are suitable only for applications requiring reduced current capacity. The FCPF1300N80ZYD is classified as Active, while the FCPF1300N80Z is Not For New Designs.

For Lower Voltage Applications (600V):

The TK5A60W,S4VX (Toshiba DTMOSIV series) is classified as Active and ROHS3 Compliant. This part is applicable only to systems where 600V drain-to-source voltage is sufficient. It provides 5.4A continuous drain current with low on-state resistance at 0.9Ohm and minimal gate charge at 10.5nC.

Compliance Considerations:

All recommended substitutes maintain ROHS3 compliance and REACH Unaffected status, ensuring regulatory alignment with the original STF9NK80Z. The R8008ANX and IPA80R900P7XKSA1 are both Active products, supporting long-term availability for production and field replacement scenarios.

Frequently Asked Questions (FAQ)

Q: Can the FCPF1300N80Z directly replace the STF9NK80Z in all applications?

A: The FCPF1300N80Z matches the 800V Vdss rating and operates within the same temperature range. However, its 4A continuous drain current is significantly lower than the STF9NK80Z's 7.5A rating. Direct substitution is only valid for applications where the circuit current requirement does not exceed 4A. The part is classified as Not For New Designs, limiting its use to legacy system support.

Q: What is the primary difference between FCPF1300N80Z and FCPF1300N80ZYD?

A: Both parts are electrically identical with 800V Vdss and 4A continuous drain current. The FCPF1300N80ZYD features Y-Forming lead configuration in the TO-220F-3 package, providing pre-formed leads for automated insertion. The FCPF1300N80ZYD is classified as Active, while FCPF1300N80Z is Not For New Designs. For new designs, FCPF1300N80ZYD is the preferred option if the 4A current rating is acceptable.

Q: Why does the IPA80R900P7XKSA1 have lower gate charge than the STF9NK80Z despite similar voltage rating?

A: Gate charge is determined by the specific semiconductor technology and die design, not solely by voltage rating. The IPA80R900P7XKSA1 uses Infineon's CoolMOS™ P7 technology, which is optimized for reduced switching losses. Lower gate charge (15nC versus 84nC) results in reduced gate drive power requirements and faster switching transitions, but this part is rated for 6A continuous current versus the STF9NK80Z's 7.5A.

Q: Is the R8008ANX suitable for applications requiring the full 7.5A rating of the STF9NK80Z?

A: Yes. The R8008ANX is rated for 8A continuous drain current at 25°C, which exceeds the STF9NK80Z's 7.5A specification. It maintains the 800V Vdss rating and operates across the same -55°C to 150°C temperature range. The R8008ANX is classified as Active and ROHS3 Compliant, making it suitable for both legacy replacement and new designs.

Q: Can the TK5A60W,S4VX be used in circuits designed for 800V operation?

A: No. The TK5A60W,S4VX is rated for 600V maximum drain-to-source voltage. Using this part in an 800V circuit would result in device failure. This part is only applicable to systems where the maximum operating voltage does not exceed 600V. It is not a direct substitute for the STF9NK80Z in 800V applications.

Q: What packaging considerations apply when substituting TO-220 variants?

A: All substitute parts use TO-220 through-hole packages with three leads (Gate, Drain, Source). Mechanical compatibility is maintained across TO-220FP, TO-220F-3, TO-220FM, TO-220SIS, and PG-TO220-3-31 variants. However, lead forming and spacing may differ. The FCPF1300N80ZYD features Y-Forming leads, which may require different insertion tooling than standard straight-lead packages. Verify PCB hole spacing and lead bend radius compatibility before assembly.

Q: Are all substitute parts RoHS3 compliant?

A: The R8008ANX, IPA80R900P7XKSA1, FCPF1300N80Z, and TK5A60W,S4VX are all confirmed ROHS3 Compliant. The FCPF1300N80ZYD RoHS status is not specified in the provided data. Verify RoHS compliance documentation with the supplier before procurement if regulatory certification is required.

Q: Which substitute part offers the lowest on-state resistance?

A: Both the IPA80R900P7XKSA1 and TK5A60W,S4VX offer 0.9Ohm on-state resistance, which is lower than the STF9NK80Z's 1.2Ohm. However, these measurements are taken at different current levels (2.2A and 2.7A respectively, versus 3.75A for the STF9NK80Z). Lower on-state resistance reduces conduction losses but does not directly indicate superior performance across all operating points. Select based on the specific current and voltage conditions of your application.