STF9NK60ZD N-Channel 600V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The STF9NK60ZD is an N-Channel 600V 7A MOSFET manufactured by STMicroelectronics in the SuperFREDmesh™ series, housed in a TO-220FP through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 30W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ). Equivalent alternatives maintain the same electrical performance envelope, while substitute parts offer comparable functionality within defined parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7	A
Rds On (Max) @ 3.5A, 10V	950	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	53	nC
Input Capacitance (Ciss) @ 25V	1110	pF
Power Dissipation (Max)	30	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220FP	Through Hole
Gate Drive Voltage	10	V

Substitute Part Grouping Explanation

Substitution of the STF9NK60ZD is determined by the following critical parameters: Drain to Source Voltage (Vdss) of 600V, continuous drain current capability, on-state resistance (Rds On), gate charge characteristics, and through-hole package compatibility. Parts are grouped into two categories:

Parametric Equivalents maintain identical electrical specifications across all critical parameters, including Vdss (600V), Id (7A), Rds On (950mOhm @ 3.5A, 10V), and gate charge (53nC @ 10V). These parts are direct functional replacements with no performance trade-offs.

Similar Substitutes share the same Vdss (600V) and package family (TO-220 variants) but exhibit variations in one or more of the following: continuous drain current (ranging from 4A to 8A), on-state resistance (600mOhm to 980mOhm), gate charge (10.2nC to 49nC), or operating temperature minimums (-40°C to -55°C). These parts are suitable for applications where the specified parameter variation does not compromise circuit performance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Pd Max (W)	Package	Status
STF9NK60ZD	STMicroelectronics	600	7	950	53	1110	30	TO-220FP	Obsolete
STP9NK60ZFP	STMicroelectronics	600	7	950	53	1110	30	TO-220FP	Active
FCPF7N60	onsemi	600	7	600	30	920	31	TO-220F-3	Not For New Designs
FCPF7N60YDTU	Fairchild Semiconductor	600	7	600	30	920	31	TO-220F-3	Active
IPA60R950C6XKSA1	Infineon Technologies	600	4.4	950	13	280	26	TO-220-FP	Obsolete
IPA80R1K0CEXKSA2	Infineon Technologies	800	5.7	950	31	785	32	TO-220-FP	Active
IRFIB6N60APBF	Vishay Siliconix	600	5.5	750	49	1400	60	TO-220-3	Active
R6004ENX	Rohm Semiconductor	600	4	980	15	250	40	TO-220FM	Active
R6004KNX	Rohm Semiconductor	600	4	980	10.2	280	40	TO-220FM	Active
R6008FNX	Rohm Semiconductor	600	8	950	20	580	50	TO-220FM	Active

Engineering Selection Recommendations

Primary Equivalent: STP9NK60ZFP (STMicroelectronics) is the direct parametric equivalent to STF9NK60ZD. Both devices share identical electrical specifications (600V, 7A, 950mOhm Rds On, 53nC gate charge) and the same TO-220FP package. STP9NK60ZFP carries Active product status and maintains full ROHS3 compliance and REACH unaffected designation, making it the preferred replacement for obsolete STF9NK60ZD applications.

Secondary Equivalents: FCPF7N60YDTU (Fairchild Semiconductor) maintains 600V Vdss and 7A continuous drain current with Active product status. This part exhibits lower on-state resistance (600mOhm versus 950mOhm) and reduced gate charge (30nC versus 53nC), resulting in improved switching efficiency. The TO-220F-3 package with Y-forming leads is mechanically compatible with TO-220FP footprints. ROHS3 compliance is confirmed.

Substitutes with Current Derating: R6008FNX (Rohm Semiconductor) provides 8A continuous drain current at 600V with 950mOhm Rds On, exceeding the STF9NK60ZD current rating. This part is suitable for applications requiring higher current margin. Active status and ROHS3 compliance are confirmed. Operating temperature maximum is 150°C (TJ).

Substitutes with Voltage Derating: IPA80R1K0CEXKSA2 (Infineon Technologies CoolMOS™ CE) operates at 800V Vdss with 5.7A continuous drain current and 950mOhm Rds On. This part is applicable only in circuits where 800V blocking voltage is acceptable and does not create over-specification concerns. Active product status and full compliance certifications are confirmed. Operating temperature minimum is -40°C.

Substitutes with Current Derating: IPA60R950C6XKSA1 (Infineon Technologies CoolMOS™) and R6004ENX/R6004KNX (Rohm Semiconductor) provide 4.4A, 4A, and 4A continuous drain current respectively at 600V. These parts are suitable for applications where the STF9NK60ZD 7A rating exceeds circuit requirements. All maintain 600V Vdss and exhibit comparable or superior on-state resistance characteristics.

Frequently Asked Questions (FAQ)

Q: Can STP9NK60ZFP directly replace STF9NK60ZD without circuit modification?

A: Yes. STP9NK60ZFP is a parametric equivalent with identical Vdss (600V), Id (7A), Rds On (950mOhm @ 3.5A, 10V), gate charge (53nC @ 10V), and package type (TO-220FP). No circuit modifications are required. The primary difference is product status: STP9NK60ZFP is Active while STF9NK60ZD is Obsolete.

Q: What is the difference between TO-220FP and TO-220F-3 packages?

A: Both are through-hole TO-220 variants with three leads. TO-220FP denotes a full-pack configuration, while TO-220F-3 is a standard three-lead variant. FCPF7N60YDTU specifies TO-220F-3 with Y-forming leads, indicating pre-formed lead geometry. Mechanical compatibility with TO-220FP footprints is maintained. Verify PCB pad spacing and lead-forming requirements before substitution.

Q: Can I use FCPF7N60YDTU as a direct replacement for STF9NK60ZD?

A: FCPF7N60YDTU is functionally compatible with identical 600V Vdss and 7A Id ratings. However, on-state resistance is lower (600mOhm versus 950mOhm), resulting in reduced conduction losses and improved efficiency. Gate charge is also lower (30nC versus 53nC), enabling faster switching. These differences are beneficial in most applications. Package variant (TO-220F-3 with Y-forming) requires verification of PCB compatibility. FCPF7N60YDTU carries "Not For New Designs" status; FCPF7N60YDTU is Active.

Q: Why does IPA80R1K0CEXKSA2 have 800V Vdss instead of 600V?

A: IPA80R1K0CEXKSA2 is a higher-voltage variant in the Infineon CoolMOS™ CE series. The 800V rating provides additional blocking voltage margin but is not required for 600V applications. This part is suitable only if circuit topology or safety margins justify the higher voltage rating. Operating temperature minimum is -40°C (versus -55°C for STF9NK60ZD).

Q: What are the implications of using R6008FNX with 8A rating instead of 7A?

A: R6008FNX provides 8A continuous drain current, exceeding the STF9NK60ZD 7A specification. This higher current rating increases design margin and thermal headroom. On-state resistance remains comparable (950mOhm). Power dissipation rating is higher (50W versus 30W). This substitution is beneficial for applications operating near the 7A limit. Operating temperature maximum is 150°C (TJ).

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant designation. REACH status is "REACH Unaffected" for all parts. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts except FCPF7N60 and FCPF7N60YDTU, which do not specify MSL. All parts are suitable for standard PCB assembly processes.

Q: Can I use lower-current parts like R6004ENX or R6004KNX in a 7A application?

A: R6004ENX and R6004KNX are rated for 4A continuous drain current, which is below the STF9NK60ZD 7A specification. These parts are suitable only for applications where actual circuit current does not exceed 4A. Verify circuit current requirements before substitution. Using undersized parts in higher-current applications results in thermal stress and reduced reliability.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., FCPF7N60YDTU at 30nC) enables faster switching and reduced driver power consumption compared to higher gate charge (STF9NK60ZD at 53nC). This difference is significant in high-frequency switching applications. Verify gate driver capability before substitution.

Q: Are there any temperature range limitations with substitute parts?

A: Most substitute parts operate from -55°C to 150°C (TJ), matching STF9NK60ZD. Exception: IPA80R1K0CEXKSA2 operates from -40°C to 150°C (TJ), with a higher minimum temperature. R6004ENX specifies maximum temperature of 150°C without explicit minimum. Verify application temperature requirements before substitution.

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