STF9N60M2 Equivalent & Substitute Parts

Part Overview

The STF9N60M2 is an N-Channel 600V 5.5A MOSFET manufactured by STMicroelectronics in the MDmesh™ II Plus series. This through-hole TO-220FP packaged device is designed for high-voltage switching applications requiring 600V drain-to-source voltage capability. The part is currently Active in product status with 4545 units in stock inventory. Equivalent and substitute parts are identified to provide design flexibility, accommodate supply chain variations, and support alternative sourcing strategies while maintaining electrical and mechanical compatibility within specified parameter ranges.

Substiute Parts

STF9N60M2

STMicroelectronicsIn Stock: 4597STF9N60M2 Datasheet

Current PartRFQ

FDPF12N60NZ

onsemiIn Stock: 15542FDPF12N60NZ Datasheet

SimilarRFQ

IRFIB6N60APBF

Vishay SiliconixIn Stock: 1286IRFIB6N60APBF Datasheet

SimilarRFQ

TK8A65W,S5X

Toshiba Semiconductor and StorageIn Stock: 1199TK8A65W,S5X Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STF9N60M2 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): 600V minimum (higher voltage ratings are acceptable)
• Continuous Drain Current (Id): 5.5A minimum at 25°C
• Mounting Type: Through Hole
• Package Family: TO-220 series (TO-220FP, TO-220F-3, TO-220-3, TO-220SIS)
• FET Type: N-Channel MOSFET
• Technology: Metal Oxide (MOSFET)
• RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Parameters:

• Gate Charge (Qg): Lower values preferred for faster switching
• Rds On: Lower values preferred for reduced power dissipation
• Power Dissipation: Equal or higher ratings acceptable
• Operating Temperature: 150°C minimum junction temperature

The three substitute parts identified meet all mandatory criteria and provide equivalent or enhanced electrical performance within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

STF9N60M2 (Primary Selection) The STF9N60M2 remains the primary component choice when available. It offers the lowest gate charge (10nC) and input capacitance (320pF @ 100V), resulting in minimal switching losses and optimal performance in high-frequency applications. All parts are ROHS3 compliant and Active in product status.

FDPF12N60NZ (onsemi UniFET-II™) The FDPF12N60NZ provides enhanced current handling capability at 12A continuous drain current, double that of the main part. This substitute is suitable for applications requiring higher current capacity or thermal margin. The lower Rds On (650mOhm) reduces conduction losses. Extended operating temperature range (-55°C to 150°C) supports wider environmental applications. Higher gate charge (34nC) and input capacitance (1676pF) result in increased switching losses compared to the main part.

IRFIB6N60APBF (Vishay Siliconix) The IRFIB6N60APBF matches the main part's 5.5A continuous drain current specification and maintains 600V Vdss rating. The isolated tab package variant provides additional design flexibility for thermal management. Higher power dissipation rating (60W) accommodates applications with elevated thermal requirements. Gate charge (49nC) and input capacitance (1400pF) are higher than the main part, increasing switching losses. Extended operating temperature range (-55°C to 150°C) supports broader environmental conditions.

TK8A65W,S5X (Toshiba DTMOSIV) The TK8A65W,S5X offers 650V Vdss rating, providing 50V additional voltage margin over the main part. Continuous drain current of 7.8A exceeds the main part specification. Lower Rds On (650mOhm) and gate charge (16nC) deliver improved switching performance. Input capacitance (570pF @ 300V) is moderate. This part is suitable for applications requiring higher voltage headroom and improved efficiency.

All substitute parts maintain ROHS3 compliance and Active product status, ensuring long-term availability and regulatory conformance.

Frequently Asked Questions (FAQ)

Q: Can the FDPF12N60NZ replace the STF9N60M2 in all applications? A: The FDPF12N60NZ is electrically compatible as a substitute. It meets or exceeds all mandatory parameters: 600V Vdss, 12A continuous drain current (exceeds 5.5A requirement), TO-220-3 package, and ROHS3 compliance. However, the higher gate charge (34nC vs. 10nC) and input capacitance (1676pF vs. 320pF) result in increased switching losses. Applications sensitive to switching frequency or gate drive power should evaluate this trade-off.

Q: What is the primary difference between the IRFIB6N60APBF and STF9N60M2? A: Both parts share identical 600V Vdss and 5.5A continuous drain current ratings. The IRFIB6N60APBF features an isolated tab package variant and higher power dissipation rating (60W vs. 20W). The main electrical difference is higher gate charge (49nC vs. 10nC) and input capacitance (1400pF vs. 320pF), resulting in greater switching losses. The isolated tab provides thermal management flexibility in certain PCB layouts.

Q: Why does the TK8A65W,S5X have a higher Vdss rating? A: The TK8A65W,S5X is rated for 650V Vdss, providing 50V additional voltage margin compared to the 600V STF9N60M2. This higher rating accommodates applications with voltage transients or design margins requiring additional headroom. The part remains compatible with 600V nominal system designs while offering enhanced overvoltage protection.

Q: Are all substitute parts available in the same package? A: All substitute parts use TO-220 series through-hole packages. The STF9N60M2 uses TO-220FP, while substitutes use TO-220F-3, TO-220-3, or TO-220SIS variants. These packages are mechanically and electrically compatible for standard PCB footprints. The IRFIB6N60APBF features an isolated tab variant, which may require PCB layout modifications if thermal isolation is required.

Q: What is the impact of higher gate charge on circuit design? A: Gate charge (Qg) determines the total charge required to switch the MOSFET on or off. Higher gate charge increases switching time and gate drive power requirements. The STF9N60M2 (10nC) requires minimal gate drive power, while the IRFIB6N60APBF (49nC) requires approximately 5 times more charge. Applications with limited gate drive capability or high-frequency switching should prioritize lower gate charge specifications.

Q: Can these parts be used interchangeably in PCB designs? A: All substitute parts are mechanically compatible with TO-220 through-hole footprints. However, electrical performance differences require circuit evaluation. The lower gate charge and input capacitance of the STF9N60M2 and TK8A65W,S5X result in faster switching and lower gate drive losses. Applications with tight timing requirements or high switching frequencies should verify performance with higher gate charge substitutes through simulation or testing.

Q: What compliance certifications apply to all parts? A: All parts listed are ROHS3 compliant and REACH unaffected. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code. All parts maintain Active product status, ensuring continued availability and manufacturer support.