STF8N65M5 N-Channel MOSFET 650V 7A TO-220FP Equivalent & Substitute Parts

Part Overview

The STF8N65M5 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 7A continuous drain current at 25°C. This device operates in the MDmesh™ V series and is housed in a TO-220FP through-hole package. The part is currently Active in product status with 16,200 units in stock inventory.

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design flexibility permits operation within specified electrical and mechanical parameter ranges. Substitutes must maintain compatibility with the TO-220-3 Full Pack footprint and operate within the established voltage and current specifications.

Substiute Parts

STF8N65M5
STMicroelectronicsIn Stock: 16281STF8N65M5 Datasheet
STF8N65M5
Current Part
AOTF12N60L
Alpha & Omega Semiconductor Inc.In Stock: 1387AOTF12N60L Datasheet
AOTF12N60L
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FDPF15N65
onsemiIn Stock: 15341FDPF15N65 Datasheet
FDPF15N65
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IPA60R600E6XKSA1
Infineon TechnologiesIn Stock: 876IPA60R600E6XKSA1 Datasheet
IPA60R600E6XKSA1
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IPAW60R600P7SXKSA1
Infineon TechnologiesIn Stock: 1024IPAW60R600P7SXKSA1 Datasheet
IPAW60R600P7SXKSA1
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IPAW70R600CEXKSA1
Infineon TechnologiesIn Stock: 872IPAW70R600CEXKSA1 Datasheet
IPAW70R600CEXKSA1
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SPA07N60C3XKSA1
Infineon TechnologiesIn Stock: 4246SPA07N60C3XKSA1 Datasheet
SPA07N60C3XKSA1
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 7 A
On-State Resistance (Rds On Max) @ Id, Vgs 600 mOhm @ 3.5A, 10V mOhm
Gate-Source Threshold Voltage (Vgs(th) Max) @ Id 5 V @ 250µA
Gate Charge (Qg Max) @ Vgs 15 nC @ 10V
Maximum Gate-Source Voltage (Vgs Max) ±25 V
Input Capacitance (Ciss Max) @ Vds 690 pF @ 100V
Power Dissipation (Max) 25 W
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole -
Package / Case TO-220-3 Full Pack -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution logic for the STF8N65M5 is based on the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a drain-to-source voltage (Vdss) rating equal to or greater than 650V to ensure safe operation in the intended application circuit.

Current Capacity: Substitute parts must support continuous drain current (Id) at 25°C equal to or greater than 7A to handle the design load requirements.

On-State Resistance (Rds On): Substitute parts with lower Rds On values reduce conduction losses and heat dissipation, improving efficiency. Parts with higher Rds On values increase power dissipation and may require thermal management review.

Package Compatibility: All substitute parts must use the TO-220-3 Full Pack footprint to ensure mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Gate Charge (Qg): Lower gate charge values reduce switching losses and driver circuit stress. Higher gate charge values increase switching losses but do not prevent substitution if other parameters are met.

Regulatory Compliance: All substitute parts must maintain ROHS3 compliance and REACH Unaffected status to meet environmental and regulatory requirements.

Product Status: Active status parts are preferred for new designs. Parts with Last Time Buy or Not For New Designs status may be used for legacy system support or when inventory availability is critical.

Parameter Comparison

Parameter STF8N65M5 SPA07N60C3XKSA1 IPAW60R600P7SXKSA1 FDPF15N65 AOTF12N60L IPA60R600E6XKSA1
Manufacturer STMicroelectronics Infineon Technologies Infineon Technologies onsemi Alpha & Omega Semiconductor Inc. Infineon Technologies
Vdss (V) 650 650 600 650 600 600
Id @ 25°C (A) 7 7.3 6 15 12 7.3
Rds On Max (mOhm) 600 @ 3.5A, 10V 600 @ 4.6A, 10V 600 @ 1.7A, 10V 440 @ 7.5A, 10V 550 @ 6A, 10V 600 @ 2.4A, 10V
Vgs(th) Max (V) 5 @ 250µA 3.9 @ 250µA 4 @ 80µA 5 @ 250µA 4.5 @ 250µA 3.5 @ 200µA
Qg Max (nC) 15 @ 10V 27 @ 10V 9 @ 10V 63 @ 10V 50 @ 10V 20.5 @ 10V
Vgs Max (V) ±25 ±20 ±20 ±30 ±30 ±20
Ciss Max (pF) 690 @ 100V 790 @ 25V 363 @ 400V 3095 @ 25V 2100 @ 25V 440 @ 100V
Power Dissipation Max (W) 25 32 21 38.5 50 28
Operating Temperature (°C) 150 -55 to 150 -40 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-220FP PG-TO220-3-31 PG-TO220-FP TO-220F-3 TO-220F PG-TO220-FP
Product Status Active Active Last Time Buy Active Active Not For New Designs
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Inventory (Pcs) 16200 4150 923 15326 1293 828

Engineering Selection Recommendations

SPA07N60C3XKSA1 (Infineon Technologies CoolMOS™): This part maintains 650V Vdss rating matching the STF8N65M5 and provides 7.3A continuous drain current. Active product status supports new design implementations. The 32W power dissipation rating exceeds the original 25W specification, providing thermal margin. Gate charge of 27 nC is higher than the original 15 nC, resulting in increased switching losses. ROHS3 compliance and REACH Unaffected status meet regulatory requirements.

FDPF15N65 (onsemi UniFET™): This part maintains 650V Vdss rating and provides 15A continuous drain current, significantly exceeding the 7A requirement. Active product status supports new designs. The 440 mOhm Rds On at 7.5A represents improved efficiency compared to the original 600 mOhm specification. Higher gate charge of 63 nC increases switching losses. Substantially higher power dissipation rating of 38.5W provides thermal headroom. ROHS3 compliance and REACH Unaffected status meet regulatory requirements. High inventory availability of 15,326 units supports supply chain continuity.

AOTF12N60L (Alpha & Omega Semiconductor Inc.): This part operates at 600V Vdss, 50V below the original 650V rating. Continuous drain current of 12A exceeds the 7A requirement. Active product status supports new designs. The 550 mOhm Rds On at 6A provides improved efficiency. Gate charge of 50 nC increases switching losses compared to the original 15 nC. Power dissipation rating of 50W provides substantial thermal margin. ROHS3 compliance and REACH Unaffected status meet regulatory requirements.

IPAW60R600P7SXKSA1 (Infineon Technologies CoolMOS™ P7): This part operates at 600V Vdss, 50V below the original 650V rating. Continuous drain current of 6A falls below the 7A requirement. Last Time Buy product status indicates limited availability for future procurement. Gate charge of 9 nC is lower than the original 15 nC, reducing switching losses. Power dissipation rating of 21W is lower than the original 25W specification. ROHS3 compliance and REACH Unaffected status meet regulatory requirements. Limited inventory of 923 units restricts long-term supply availability.

IPA60R600E6XKSA1 (Infineon Technologies CoolMOS™): This part operates at 600V Vdss, 50V below the original 650V rating. Continuous drain current of 7.3A meets the 7A requirement. Not For New Designs product status restricts use to legacy system support only. Gate charge of 20.5 nC exceeds the original 15 nC specification. Power dissipation rating of 28W exceeds the original 25W specification. ROHS3 compliance and REACH Unaffected status meet regulatory requirements. Limited inventory of 828 units restricts availability.

Frequently Asked Questions (FAQ)

Q: Can the AOTF12N60L substitute for the STF8N65M5 in a 650V application?

A: The AOTF12N60L operates at 600V Vdss, which is 50V below the STF8N65M5 rating of 650V. This part is not suitable for applications requiring the full 650V voltage margin. Use only in applications where the maximum operating voltage does not exceed 600V.

Q: What is the impact of higher gate charge on switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge values increase switching losses and driver circuit stress. The SPA07N60C3XKSA1 has 27 nC compared to the original 15 nC, resulting in approximately 80% higher switching energy. The FDPF15N65 has 63 nC, resulting in approximately 320% higher switching energy. These differences affect overall circuit efficiency and thermal management requirements.

Q: Why is the FDPF15N65 rated for 15A when the STF8N65M5 is only 7A?

A: The FDPF15N65 is a higher-current device designed for applications requiring greater current capacity. The 15A rating does not prevent its use in 7A applications; the device simply operates at lower stress levels. The lower Rds On value of 440 mOhm at 7.5A compared to 600 mOhm at 3.5A for the STF8N65M5 provides improved efficiency at the required current level.

Q: Are all substitute parts compatible with existing PCB layouts?

A: All substitute parts listed use the TO-220-3 Full Pack footprint, ensuring mechanical compatibility with existing PCB layouts. However, thermal management characteristics may differ due to variations in power dissipation ratings and Rds On specifications. Verify thermal performance in the specific application circuit.

Q: What is the significance of product status (Active, Last Time Buy, Not For New Designs)?

A: Active status indicates the part is in full production and suitable for new design implementations with long-term availability. Last Time Buy status indicates limited production with a defined end-of-life date; use only when inventory is critical or for legacy system support. Not For New Designs status restricts use to existing products and legacy systems; new designs should not incorporate these parts.

Q: Can I use the IPA60R600E6XKSA1 in a new design?

A: The IPA60R600E6XKSA1 carries Not For New Designs product status, which restricts its use to legacy system support and existing product maintenance. New designs should use Active status parts such as the SPA07N60C3XKSA1 or FDPF15N65 to ensure long-term supply availability and manufacturer support.

Q: How do I evaluate thermal performance when substituting parts?

A: Compare power dissipation ratings and Rds On specifications. The STF8N65M5 has 25W maximum power dissipation and 600 mOhm Rds On. The FDPF15N65 has 38.5W maximum power dissipation and 440 mOhm Rds On. Lower Rds On values reduce conduction losses. Verify that the thermal management solution (heatsink, PCB copper area) accommodates the substitute part's power dissipation characteristics in the specific application circuit.

Q: What does ROHS3 compliance mean for component selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting the use of lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls, and polybrominated diphenyl ethers. All listed substitute parts maintain ROHS3 compliance, ensuring compatibility with environmental regulations and customer requirements.

Q: Why do some substitute parts have lower Vdss ratings?

A: The AOTF12N60L, IPAW60R600P7SXKSA1, and IPA60R600E6XKSA1 operate at 600V Vdss compared to the STF8N65M5 at 650V. These parts are suitable only for applications where the maximum operating voltage does not exceed 600V. Applications requiring the full 650V margin must use parts with 650V or higher Vdss ratings, such as the SPA07N60C3XKSA1 or FDPF15N65.

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