STF8N60DM2 Equivalent & Substitute Parts

Part Overview

The STF8N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 8A continuous drain current at 25°C. This device is part of the MDmesh™ DM2 series and is housed in a TO-220FPAB through-hole package. The component is Active in product status and RoHS3 compliant, making it suitable for industrial switching applications requiring high-voltage performance.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	8	A
Power Dissipation (Max)	25	W
Rds On (Max) @ 4A, 10V	600	mOhm
Gate Charge (Qg) @ 10V	13.5	nC
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220FPAB	Through Hole
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the STF8N60DM2 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 600V
Continuous Drain Current (Id) must be equal to or greater than 8A at 25°C
On-state resistance (Rds On) must not exceed the application's thermal and switching loss requirements
Gate charge characteristics must be compatible with the gate drive circuit
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting type must be Through Hole
Package must be compatible with TO-220 footprint configurations
Pin configuration must match N-Channel MOSFET standard pinout

Compliance Requirements:

RoHS3 compliance required
REACH unaffected status required
Active product status preferred for long-term availability

Parameter Comparison

Parameter	STF8N60DM2 (Main)	AOTF12N60L (Substitute)	TK560A65Y,S4X (Substitute)
Manufacturer	STMicroelectronics	Alpha & Omega Semiconductor Inc.	Toshiba Semiconductor and Storage
Vdss (V)	600	600	650
Id @ 25°C (A)	8	12	7
Power Dissipation Max (W)	25	50	30
Rds On Max (mOhm)	600 @ 4A, 10V	550 @ 6A, 10V	560 @ 3.5A, 10V
Gate Charge Qg @ 10V (nC)	13.5	50	14.5
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package Type	TO-220FPAB	TO-220F	TO-220SIS
FET Type	N-Channel	N-Channel	N-Channel
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active

Engineering Selection Recommendations

AOTF12N60L (Alpha & Omega Semiconductor Inc.)

The AOTF12N60L meets all electrical substitution criteria for the STF8N60DM2. This device provides 12A continuous drain current, exceeding the 8A requirement, and maintains 600V Vdss rating. The lower Rds On value (550 mOhm) at higher current (6A) indicates improved on-state performance. Operating temperature range matches the main part specification. The device is RoHS3 compliant and Active in product status. The TO-220F package is mechanically compatible with TO-220 footprints. Gate charge is elevated at 50 nC, which may require gate drive circuit verification for switching frequency compatibility. This substitute is suitable for applications where higher current capacity and improved thermal performance are beneficial.

TK560A65Y,S4X (Toshiba Semiconductor and Storage)

The TK560A65Y,S4X provides 650V Vdss, exceeding the 600V requirement, with 7A continuous drain current, which is marginally below the 8A specification. The Rds On value (560 mOhm) is comparable to the main part. Gate charge at 14.5 nC is nearly identical to the STF8N60DM2, indicating compatible gate drive requirements. Operating temperature range matches the main part specification. The device is RoHS3 compliant and Active in product status. The TO-220SIS package is mechanically compatible with TO-220 footprints. This substitute is suitable for applications where the 7A current rating is acceptable and higher voltage margin is advantageous.

Both substitutes maintain compliance with RoHS3 and REACH requirements and are Active products, ensuring long-term availability and regulatory alignment.

Frequently Asked Questions (FAQ)

Q: Can the AOTF12N60L directly replace the STF8N60DM2 in my circuit?

A: The AOTF12N60L meets all critical electrical parameters for substitution: 600V Vdss, 12A continuous drain current (exceeding the 8A requirement), and compatible operating temperature range. The TO-220F package is mechanically compatible with TO-220 footprints. However, the elevated gate charge (50 nC versus 13.5 nC) requires verification that your gate drive circuit can supply the additional charge without exceeding switching frequency or thermal limits.

Q: What is the key difference between the TK560A65Y,S4X and the STF8N60DM2?

A: The primary difference is the continuous drain current rating: the TK560A65Y,S4X is rated for 7A, while the STF8N60DM2 is rated for 8A. The TK560A65Y,S4X provides higher voltage margin (650V versus 600V). Gate charge characteristics are nearly identical (14.5 nC versus 13.5 nC), indicating compatible gate drive requirements. This substitute is suitable if your application current requirement does not exceed 7A.

Q: Are the package types interchangeable?

A: The STF8N60DM2 uses TO-220FPAB, the AOTF12N60L uses TO-220F, and the TK560A65Y,S4X uses TO-220SIS. All three are TO-220 family packages with compatible pin configurations and footprints for through-hole mounting. Physical dimensions and lead spacing are standardized within the TO-220 family, allowing direct PCB footprint compatibility.

Q: Do both substitutes meet regulatory compliance requirements?

A: Yes. Both the AOTF12N60L and TK560A65Y,S4X are RoHS3 compliant and REACH unaffected, matching the compliance status of the STF8N60DM2. Both devices are Active in product status, ensuring regulatory alignment and long-term supply availability.

Q: Which substitute should I select for thermal performance?

A: The AOTF12N60L offers superior thermal performance with a maximum power dissipation rating of 50W compared to the STF8N60DM2's 25W. The lower Rds On value (550 mOhm) also contributes to reduced on-state losses. The TK560A65Y,S4X provides 30W maximum power dissipation. Selection depends on your application's thermal budget and current requirements.

Q: What is the impact of gate charge differences on circuit design?

A: The AOTF12N60L has significantly higher gate charge (50 nC) compared to the STF8N60DM2 (13.5 nC) and TK560A65Y,S4X (14.5 nC). Higher gate charge requires more charge delivery from the gate drive circuit, potentially increasing switching losses and heat generation in the driver. The TK560A65Y,S4X gate charge is nearly identical to the main part, requiring minimal gate drive circuit modification.

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