STF6NK70Z Equivalent & Substitute Parts

Part Overview

The STF6NK70Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 700V drain-to-source voltage with 5A continuous drain current at 25°C. This device is packaged in a TO-220FP through-hole configuration and is part of the SuperMESH™ series. The STF6NK70Z is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original application.

Substiute Parts

STF6NK70Z
STMicroelectronicsIn Stock: 17367STF6NK70Z Datasheet
STF6NK70Z
Current Part
FQPF7N65C
onsemiIn Stock: 29031FQPF7N65C Datasheet
FQPF7N65C
Similar
IPA80R1K4CEXKSA2
Infineon TechnologiesIn Stock: 1631IPA80R1K4CEXKSA2 Datasheet
IPA80R1K4CEXKSA2
Similar

Key Parameters

Parameter STF6NK70Z
Manufacturer STMicroelectronics
FET Type N-Channel
Drain to Source Voltage (Vdss) 700 V
Continuous Drain Current (Id) @ 25°C 5 A
Rds On (Max) @ Id, Vgs 1.8 Ω @ 2.5 A, 10 V
Power Dissipation (Max) 30 W
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Operating Temperature Range -55°C to 150°C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Obsolete
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STF6NK70Z is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 700 V
  • Continuous Drain Current (Id): Substitute must support the application's current requirements
  • On-State Resistance (Rds On): Lower values indicate improved performance; substitutes with comparable or lower Rds On are acceptable
  • Gate Charge (Qg): Lower values reduce switching losses and gate drive requirements
  • Operating Temperature Range: Substitute must cover the application's thermal requirements
  • Power Dissipation: Substitute must handle thermal load within specified limits

Mechanical Compatibility Criteria:

  • Mounting Type: Through-hole configuration required
  • Package / Case: TO-220-3 Full Pack pinout compatibility

Regulatory Compliance:

  • RoHS3 Compliance required
  • REACH Unaffected status required

The substitute parts listed below meet these criteria within the allowed parameter ranges for this product category.

Parameter Comparison

Parameter STF6NK70Z FQPF7N65C IPA80R1K4CEXKSA2
Manufacturer STMicroelectronics onsemi Infineon Technologies
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 700 V 650 V 800 V
Continuous Drain Current (Id) @ 25°C 5 A 7 A 3.9 A
Rds On (Max) @ Id, Vgs 1.8 Ω @ 2.5 A, 10 V 1.4 Ω @ 3.5 A, 10 V 1.4 Ω @ 2.3 A, 10 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 36 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30 V ±30 V ±20 V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 25 V 1245 pF @ 25 V 570 pF @ 100 V
Power Dissipation (Max) 30 W 52 W 31 W
Operating Temperature Range -55°C to 150°C -55°C to 150°C -40°C to 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Product Status Obsolete Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQPF7N65C (onsemi)

The FQPF7N65C is a substitute option with a lower Vdss rating of 650V compared to the STF6NK70Z's 700V. This device is suitable for applications where the maximum voltage stress does not exceed 650V. The FQPF7N65C offers improved performance characteristics with lower on-state resistance (1.4Ω vs. 1.8Ω) and reduced gate charge (36 nC vs. 47 nC), resulting in lower switching losses. The higher continuous drain current rating of 7A provides additional current headroom. Both devices share identical operating temperature range (-55°C to 150°C) and TO-220-3 Full Pack pinout. The FQPF7N65C is ROHS3 compliant and REACH unaffected. Product status is obsolete.

IPA80R1K4CEXKSA2 (Infineon Technologies)

The IPA80R1K4CEXKSA2 is a substitute option with a higher Vdss rating of 800V, providing enhanced voltage margin for applications subject to voltage transients. This device is part of the CoolMOS™ series and features superior performance characteristics including the lowest gate charge (23 nC) and lowest input capacitance (570 pF @ 100V) among the three options, resulting in minimal switching losses and reduced gate drive requirements. The continuous drain current is 3.9A, which is lower than the STF6NK70Z. Power dissipation is rated at 31W, comparable to the main part. The operating temperature range is -40°C to 150°C, which covers the upper temperature requirement but has a higher minimum temperature limit. The IPA80R1K4CEXKSA2 is ROHS3 compliant, REACH unaffected, and maintains active product status. Packaging is specified as Tube with PG-TO220-FP supplier device package, maintaining TO-220-3 Full Pack compatibility.

Selection Basis:

  • For applications requiring voltage ratings at or below 650V with higher current capacity, the FQPF7N65C is suitable.
  • For applications requiring higher voltage margin (800V) with lower switching losses and active product availability, the IPA80R1K4CEXKSA2 is suitable.
  • All substitute options maintain through-hole TO-220-3 Full Pack pinout compatibility, ROHS3 compliance, and REACH unaffected status.

Frequently Asked Questions (FAQ)

Q: Can the FQPF7N65C be used as a direct replacement for the STF6NK70Z?

A: The FQPF7N65C is electrically compatible for applications where the maximum drain-to-source voltage does not exceed 650V. The STF6NK70Z is rated for 700V, so the FQPF7N65C is suitable only if the application's voltage stress remains below 650V. Both devices share identical TO-220-3 Full Pack pinout and operating temperature range.

Q: What are the advantages of the IPA80R1K4CEXKSA2 over the STF6NK70Z?

A: The IPA80R1K4CEXKSA2 offers higher drain-to-source voltage (800V vs. 700V), significantly lower gate charge (23 nC vs. 47 nC), and lower input capacitance (570 pF vs. 930 pF). These characteristics reduce switching losses and gate drive power requirements. The device maintains active product status, ensuring long-term availability. The trade-off is a lower continuous drain current rating (3.9A vs. 5A).

Q: Are all substitute parts compatible with the original TO-220-3 Full Pack pinout?

A: Yes. The STF6NK70Z, FQPF7N65C, and IPA80R1K4CEXKSA2 all use TO-220-3 Full Pack pinout configuration, enabling mechanical and electrical pin compatibility in through-hole applications.

Q: What is the significance of the lower Vdss rating on the FQPF7N65C?

A: The FQPF7N65C has a maximum drain-to-source voltage of 650V, compared to 700V for the STF6NK70Z. This device is suitable only for applications where the maximum voltage stress does not exceed 650V. Applications with voltage transients or peak voltages approaching 700V require the higher-rated IPA80R1K4CEXKSA2 (800V) or equivalent.

Q: Why does the IPA80R1K4CEXKSA2 have a lower continuous drain current rating?

A: The IPA80R1K4CEXKSA2 is rated for 3.9A continuous drain current at 25°C, compared to 5A for the STF6NK70Z. This reflects the device's design optimization for lower switching losses and higher voltage rating. Applications requiring higher continuous current capacity should use the FQPF7N65C (7A) or identify alternative devices with higher current ratings.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The STF6NK70Z, FQPF7N65C, and IPA80R1K4CEXKSA2 are all ROHS3 compliant and REACH unaffected, meeting regulatory requirements for electronic component procurement.

Q: What is the operating temperature range difference between the substitutes?

A: The STF6NK70Z and FQPF7N65C both operate from -55°C to 150°C. The IPA80R1K4CEXKSA2 operates from -40°C to 150°C, with a higher minimum temperature limit. Applications requiring operation below -40°C must use the STF6NK70Z or FQPF7N65C.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IPA80R1K4CEXKSA2 has the lowest gate charge (23 nC), requiring less gate drive power and enabling faster switching. The STF6NK70Z requires 47 nC, and the FQPF7N65C requires 36 nC. Lower gate charge reduces power dissipation in the gate drive circuit and allows higher switching frequencies.

Q: What packaging format is used for the IPA80R1K4CEXKSA2?

A: The IPA80R1K4CEXKSA2 is supplied in Tube packaging with PG-TO220-FP supplier device package designation, maintaining TO-220-3 Full Pack pinout compatibility with the original STF6NK70Z.

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