STF6N60DM2 Equivalent & Substitute Parts

Part Overview

The STF6N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600 V drain-to-source voltage with 5 A continuous drain current at 25°C. This device operates within the MDmesh™ DM2 series and is housed in a TO-220FP through-hole package. The part is Active status and RoHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter ranges, enabling component interchangeability in circuit designs where the primary electrical characteristics remain within acceptable tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ Id, Vgs	1.1	Ohm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	6.2	nC @ 10V
Power Dissipation (Max)	20	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3 Full Pack	Through Hole
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the STF6N60DM2 are qualified based on the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): 600 V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drive Voltage: 10 V
Gate Charge (Qg): Comparable performance at 10 V
Vgs (Max): ±20 V or greater

Mechanical Compatibility Criteria:

Mounting Type: Through Hole
Package Case: TO-220-3 Full Pack (TO-220FM or TO-220FP variants)

Operational Criteria:

Operating Temperature: Minimum -55°C to 150°C or equivalent upper range
Product Status: Active
RoHS3 Compliance: Required

The substitute parts R6004ENX, R6004KNX, and R6008FNX meet these criteria with the following considerations: R6004ENX and R6004KNX operate at 4 A continuous drain current (lower than the 5 A rating of the main part), while R6008FNX operates at 8 A (higher than the main part). All three maintain the 600 V Vdss rating and TO-220FM package compatibility. Substitution is valid when the application circuit current requirements align with the substitute part's rated continuous drain current.

Parameter Comparison

Parameter	STF6N60DM2	R6004ENX	R6004KNX	R6008FNX
Manufacturer	STMicroelectronics	Rohm Semiconductor	Rohm Semiconductor	Rohm Semiconductor
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	600 V
Continuous Drain Current (Id) @ 25°C	5 A	4 A	4 A	8 A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 2.5A, 10V	980 mOhm @ 1.5A, 10V	980 mOhm @ 1.5A, 10V	950 mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10V	15 nC @ 10V	10.2 nC @ 10V	20 nC @ 10V
Vgs (Max)	±25 V	±20 V	±20 V	±30 V
Power Dissipation (Max)	20 W	40 W	40 W	50 W
Operating Temperature Range	-55 to 150°C	Up to 150°C	-55 to 150°C	Up to 150°C
Package Type	TO-220FP	TO-220FM	TO-220FM	TO-220FM
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS3 Compliance	Yes	Yes	Yes	Yes
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

R6004ENX Selection: R6004ENX is suitable for applications where the circuit current requirement does not exceed 4 A. This part offers improved power dissipation capability (40 W versus 20 W) and lower on-resistance at its rated current. The part maintains 600 V Vdss rating and TO-220FM package compatibility. Operating temperature range extends to 150°C maximum. RoHS3 compliance and Active product status are confirmed.

R6004KNX Selection: R6004KNX provides identical electrical ratings to R6004ENX with the addition of full operating temperature range coverage (-55°C to 150°C), matching the STF6N60DM2 specification. This part is appropriate for applications requiring extended low-temperature operation. The 4 A continuous drain current rating applies. RoHS3 compliance and Active product status are confirmed.

R6008FNX Selection: R6008FNX is suitable for applications requiring higher current handling (8 A continuous drain current). This part provides superior power dissipation (50 W) and maintains the 600 V Vdss rating. The TO-220FM package is compatible with through-hole mounting. Operating temperature extends to 150°C. RoHS3 compliance and Active product status are confirmed. Note: Operating temperature minimum is not specified; verify low-temperature requirements for your application.

All substitute parts maintain RoHS3 compliance and REACH Unaffected status, consistent with the main part specifications.

Frequently Asked Questions (FAQ)

Q: Can R6004ENX or R6004KNX directly replace STF6N60DM2 in all applications?

A: Direct replacement is valid only when the circuit current requirement does not exceed 4 A. Both R6004 variants are rated for 4 A continuous drain current, compared to the STF6N60DM2 rating of 5 A. If your circuit draws more than 4 A, these parts are not suitable substitutes. The 600 V Vdss rating and TO-220 package compatibility support mechanical and electrical interchangeability within the current limitation.

Q: What is the difference between R6004ENX and R6004KNX?

A: Both parts share identical electrical specifications (600 V Vdss, 4 A continuous drain current, 980 mOhm Rds On). The primary difference is operating temperature range: R6004ENX operates to 150°C maximum, while R6004KNX covers -55°C to 150°C. Select R6004KNX for applications requiring low-temperature operation below 0°C.

Q: Is R6008FNX a suitable substitute for higher-current applications?

A: Yes. R6008FNX is rated for 8 A continuous drain current, exceeding the STF6N60DM2 rating of 5 A. This part maintains 600 V Vdss and TO-220FM package compatibility. The higher current rating and improved power dissipation (50 W) make it suitable for applications requiring current handling above 5 A. Verify that your circuit design accommodates the potentially different gate charge characteristics (20 nC versus 6.2 nC).

Q: Are the TO-220FP and TO-220FM packages mechanically compatible?

A: Both TO-220FP (main part) and TO-220FM (substitute parts) are TO-220-3 Full Pack through-hole packages with identical pin configurations and mounting hole spacing. They are mechanically interchangeable on standard PCB layouts designed for TO-220 devices.

Q: Do all substitute parts meet the same compliance standards as STF6N60DM2?

A: Yes. All three substitute parts (R6004ENX, R6004KNX, R6008FNX) are RoHS3 compliant and REACH Unaffected, matching the compliance status of the STF6N60DM2. All parts carry Active product status.

Q: What is the significance of gate charge differences between the main part and substitutes?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. The STF6N60DM2 has 6.2 nC gate charge, while substitutes range from 10.2 nC to 20 nC. Higher gate charge requires longer switching times and may increase switching losses. Verify that your gate drive circuit can accommodate the substitute part's gate charge specification without exceeding switching frequency or thermal limits.

Q: Can I use R6008FNX in a circuit designed for STF6N60DM2 if current never exceeds 5 A?

A: Yes. R6008FNX is rated for 8 A continuous drain current, so operation at 5 A is within specification. The 600 V Vdss rating and TO-220FM package provide full compatibility. However, verify that the higher input capacitance (580 pF versus 274 pF) and gate charge (20 nC versus 6.2 nC) do not negatively impact your gate drive circuit performance or switching characteristics.

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