STF6N52K3 N-Channel MOSFET 525V 5A Equivalent & Substitute Parts

Part Overview

The STF6N52K3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 525V drain-to-source voltage with 5A continuous drain current in a Through Hole TO-220FP package. This device is part of the SuperMESH3™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Substiute Parts

STF6N52K3
STMicroelectronicsIn Stock: 1432STF6N52K3 Datasheet
STF6N52K3
Current Part
R5007FNX
Rohm SemiconductorIn Stock: 1211R5007FNX Datasheet
R5007FNX
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TK6A55DA(STA4,Q,M)
Toshiba Semiconductor and StorageIn Stock: 1123TK6A55DA(STA4,Q,M) Datasheet
TK6A55DA(STA4,Q,M)
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TK7A55D(STA4,Q,M)
Toshiba Semiconductor and StorageIn Stock: 990TK7A55D(STA4,Q,M) Datasheet
TK7A55D(STA4,Q,M)
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TK8A55DA(STA4,Q,M)
Toshiba Semiconductor and StorageIn Stock: 820TK8A55DA(STA4,Q,M) Datasheet
TK8A55DA(STA4,Q,M)
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V
Current - Continuous Drain (Id) @ 25°C 5 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2.5A, 10V
Power Dissipation (Max) 25 W
Operating Temperature Range -55 to 175 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STF6N52K3 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Vdss rating equal to or greater than 525V to ensure safe operation in the original circuit topology.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) equal to or greater than 5A at 25°C to handle the design load requirements.

On-State Resistance (Rds On): Substitute parts must maintain Rds On values within acceptable limits to preserve circuit efficiency and thermal performance. The reference specification is 1.2 Ohm maximum at 2.5A, 10V.

Package and Mounting: All substitute parts must use Through Hole mounting in TO-220 package variants (TO-220FP, TO-220FM, TO-220SIS) to ensure mechanical and electrical compatibility with existing PCB layouts.

Regulatory Compliance: All substitute parts must maintain ROHS3 compliance and EAR99 classification to meet procurement and export requirements.

Product Status: Active product status is preferred to ensure long-term availability and supply chain stability.

Parameter Comparison

Parameter STF6N52K3 (Main) R5007FNX TK6A55DA(STA4,Q,M) TK7A55D(STA4,Q,M) TK8A55DA(STA4,Q,M)
Manufacturer STMicroelectronics Rohm Semiconductor Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Vdss (V) 525 500 550 550 550
Id @ 25°C (A) 5 7 5.5 7 7.5
Rds On (Max) @ Id, Vgs (Ohm) 1.2 @ 2.5A, 10V 1.3 @ 3.5A, 10V 1.48 @ 2.8A, 10V 1.25 @ 3.5A, 10V 1.07 @ 3.8A, 10V
Power Dissipation (Max) (W) 25 40 35 35 40
Operating Temperature (°C) -55 to 175 Up to 150 Up to 150 Up to 150 Up to 150
Package TO-220FP TO-220FM TO-220SIS TO-220SIS TO-220SIS
Product Status Obsolete Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: TK8A55DA(STA4,Q,M)

The TK8A55DA from Toshiba Semiconductor and Storage is the preferred substitute for the STF6N52K3. This device exceeds the voltage requirement with a 550V Vdss rating, provides superior current handling at 7.5A continuous drain current, and delivers the lowest on-state resistance at 1.07 Ohm. The higher power dissipation rating of 40W provides thermal margin. The device maintains active product status, ensuring long-term availability. ROHS3 compliance and EAR99 classification align with regulatory requirements.

Secondary Substitute: TK7A55D(STA4,Q,M)

The TK7A55D from Toshiba offers a 550V Vdss rating with 7A continuous drain current and 1.25 Ohm on-state resistance. This device provides adequate performance margin while maintaining active status and full regulatory compliance.

Tertiary Substitute: R5007FNX

The R5007FNX from Rohm Semiconductor provides 500V Vdss with 7A continuous drain current. While the voltage rating is slightly lower than the original specification, it remains within acceptable operating margins for most applications. The device features 40W power dissipation and active product status with ROHS3 compliance.

Alternative Substitute: TK6A55DA(STA4,Q,M)

The TK6A55DA from Toshiba provides 550V Vdss with 5.5A continuous drain current, closely matching the original current specification. This device is suitable for applications where current rating is the primary design constraint.

All substitute parts maintain Through Hole mounting in TO-220 package variants, ensuring PCB compatibility. Operating temperature limitations of substitute parts (150°C maximum) should be evaluated against the original specification range of -55°C to 175°C for applications requiring extended temperature operation.

Frequently Asked Questions (FAQ)

Q: Can the R5007FNX be used as a direct replacement for the STF6N52K3?

A: The R5007FNX is functionally compatible with the STF6N52K3 for most applications. The 500V Vdss rating is 25V lower than the original specification, but this remains within acceptable operating margins for circuits designed for 525V operation. The higher current rating (7A vs. 5A) and improved power dissipation (40W vs. 25W) provide performance advantages. PCB layout modifications may be required due to package variant differences (TO-220FM vs. TO-220FP).

Q: What are the key differences between the Toshiba substitute options?

A: The three Toshiba substitutes (TK6A55DA, TK7A55D, TK8A55DA) all feature 550V Vdss ratings and active product status. They differ in current rating and on-state resistance: TK6A55DA provides 5.5A at 1.48 Ohm, TK7A55D provides 7A at 1.25 Ohm, and TK8A55DA provides 7.5A at 1.07 Ohm. Selection depends on circuit current requirements and thermal design constraints.

Q: Are all substitute parts pin-compatible with the STF6N52K3?

A: All substitute parts use TO-220 package variants with three-pin configurations (Gate, Drain, Source). Pin assignments are identical across TO-220FP, TO-220FM, and TO-220SIS variants. However, physical package dimensions may vary slightly between variants, requiring verification of PCB footprint compatibility before implementation.

Q: Do the substitute parts meet the same regulatory requirements as the original part?

A: All substitute parts listed maintain ROHS3 compliance and EAR99 classification, matching the regulatory status of the STF6N52K3. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special handling requirements.

Q: What is the impact of lower operating temperature limits on substitute parts?

A: The STF6N52K3 operates from -55°C to 175°C, while all substitute parts are rated to 150°C maximum. For applications requiring operation above 150°C, the original part specification must be maintained. For standard industrial applications operating within -40°C to 125°C, substitute parts provide adequate thermal performance.

Q: Which substitute part offers the best thermal performance?

A: The TK8A55DA provides the lowest on-state resistance (1.07 Ohm) and highest power dissipation rating (40W), resulting in the lowest junction temperature rise under load. This device is optimal for high-current or thermally constrained applications.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: All substitute parts are functionally compatible and can be used interchangeably provided the circuit design accommodates the voltage and current specifications of the selected device. However, production consistency requires standardization on a single part number to avoid qualification and testing complications.

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