STF5NK52ZD N-Channel MOSFET 520V 4.4A Equivalent & Substitute Parts

Part Overview

The STF5NK52ZD is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 520V drain-to-source voltage with 4.4A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220FP configuration and is designed for high-voltage switching applications. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	520	V
Continuous Drain Current (Id) @ 25°C	4.4	A
Rds On (Max) @ Id, Vgs	1.5	Ohm @ 2.2A, 10V
Gate Threshold Voltage (Vgs(th)) (Max)	4.5	V @ 50µA
Gate Charge (Qg) (Max)	16.9	nC @ 10V
Input Capacitance (Ciss) (Max)	529	pF @ 25V
Power Dissipation (Max)	25	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	TO-220FP
Gate Voltage (Max)	±30	V

Substitute Part Grouping Explanation

Substitution of the STF5NK52ZD is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a drain-to-source voltage (Vdss) rating equal to or greater than 520V to ensure safe operation in the original application circuit.

Current Rating Compatibility: Substitute parts must support a continuous drain current (Id) rating equal to or greater than 4.4A at 25°C to handle the design load without thermal stress.

On-State Resistance (Rds On): Substitute parts must maintain Rds On values within acceptable limits to preserve circuit efficiency and thermal characteristics. The original part specifies 1.5Ohm maximum at 2.2A, 10V.

Gate Charge (Qg): Substitute parts must have gate charge specifications compatible with the drive circuit. The original part specifies 16.9nC maximum at 10V.

Packaging and Mounting: Substitute parts must use Through Hole mounting in TO-220 package variants to ensure mechanical compatibility with existing PCB layouts.

Gate Voltage Rating: Substitute parts must support ±30V maximum gate voltage to ensure compatibility with gate drive circuits.

The identified substitute parts meet these criteria while maintaining functional equivalence for high-voltage switching applications.

Parameter Comparison

Parameter	STF5NK52ZD (Main)	TK4A53D(STA4,Q,M)	TK5A55D(STA4,Q,M)
Manufacturer	STMicroelectronics	Toshiba Semiconductor and Storage	Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss)	520V	525V	550V
Continuous Drain Current (Id) @ 25°C	4.4A (Tc)	4A (Ta)	5A (Ta)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.2A, 10V	1.7Ohm @ 2A, 10V	1.7Ohm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th)) (Max)	4.5V @ 50µA	4.4V @ 1mA	4.4V @ 1mA
Gate Charge (Qg) (Max)	16.9nC @ 10V	11nC @ 10V	11nC @ 10V
Input Capacitance (Ciss) (Max)	529pF @ 25V	490pF @ 25V	540pF @ 25V
Power Dissipation (Max)	25W (Tc)	35W (Tc)	35W (Tc)
Operating Temperature Range	-55 to 150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole TO-220FP	Through Hole TO-220SIS	Through Hole TO-220SIS
Gate Voltage (Max)	±30V	±30V	±30V
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant

Engineering Selection Recommendations

TK4A53D(STA4,Q,M) Selection Criteria:

This Toshiba substitute provides a voltage rating of 525V, which exceeds the original 520V specification by 5V. The continuous drain current rating of 4A is marginally lower than the original 4.4A specification. This part is suitable for applications where the design current requirement does not exceed 4A. The part carries Active product status and RoHS compliance certification, ensuring long-term availability and regulatory conformance. The TO-220SIS package provides mechanical compatibility with standard TO-220 PCB footprints.

TK5A55D(STA4,Q,M) Selection Criteria:

This Toshiba substitute provides a voltage rating of 550V, which exceeds the original 520V specification by 30V, and a continuous drain current rating of 5A, which exceeds the original 4.4A specification by 0.6A. This part is suitable for applications requiring higher current capacity or enhanced voltage margin. The part carries Active product status and ROHS3 compliance certification. The TO-220SIS package provides mechanical compatibility with standard TO-220 PCB footprints. The higher power dissipation rating of 35W (compared to 25W for the original) provides additional thermal headroom.

Compliance and Availability:

Both substitute parts maintain RoHS compliance and carry Active product status, ensuring regulatory conformance and ongoing component availability. The STF5NK52ZD, classified as Obsolete, should be replaced with one of these active alternatives for new designs or long-term production support.

Frequently Asked Questions (FAQ)

Q: Can TK4A53D(STA4,Q,M) directly replace STF5NK52ZD in all applications?

A: TK4A53D(STA4,Q,M) provides equivalent voltage rating (525V vs. 520V) and gate characteristics. However, the continuous drain current is rated at 4A versus the original 4.4A. Direct substitution is valid only if the application circuit operates at or below 4A continuous drain current. Verify the actual operating current in your design before substitution.

Q: What are the package differences between TO-220FP and TO-220SIS?

A: Both TO-220FP and TO-220SIS are Through Hole TO-220 package variants with three leads. The primary difference is in the internal construction and thermal characteristics. Both packages are mechanically compatible with standard TO-220 PCB footprints. Verify thermal performance requirements for your specific application, as the substitute parts offer higher power dissipation ratings (35W vs. 25W).

Q: Why does TK5A55D(STA4,Q,M) have higher gate charge than the original part?

A: Gate charge specifications differ between manufacturers due to variations in device construction and measurement conditions. TK5A55D(STA4,Q,M) specifies 11nC at 10V, while STF5NK52ZD specifies 16.9nC at 10V. The lower gate charge in the Toshiba part indicates faster switching characteristics, which may reduce gate drive power requirements in your circuit.

Q: Are the substitute parts suitable for high-temperature applications?

A: Both substitute parts support operating temperatures up to 150°C (TJ), matching the original part's maximum junction temperature. The higher power dissipation ratings (35W vs. 25W) provide additional thermal margin for sustained high-temperature operation.

Q: What is the significance of the different Rds On specifications?

A: Rds On (on-state resistance) directly affects power dissipation and heat generation. The original part specifies 1.5Ohm at 2.2A, 10V. TK4A53D(STA4,Q,M) specifies 1.7Ohm at 2A, 10V, and TK5A55D(STA4,Q,M) specifies 1.7Ohm at 2.5A, 10V. The slightly higher Rds On in the Toshiba parts results in marginally higher conduction losses. Verify thermal performance in your specific circuit design.

Q: Can I use TK5A55D(STA4,Q,M) in place of TK4A53D(STA4,Q,M)?

A: Yes. TK5A55D(STA4,Q,M) provides higher voltage rating (550V vs. 525V) and higher current rating (5A vs. 4A), making it a superset replacement. Both parts share identical gate characteristics and package compatibility. Selection between these two depends on your application's current and voltage requirements.

Q: What compliance certifications should I verify for production use?

A: Both substitute parts carry RoHS compliance certification. TK5A55D(STA4,Q,M) carries ROHS3 compliance, matching the original part's certification level. Both parts are classified as EAR99 for export control purposes. Verify REACH compliance status with your supplier for your specific application region.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message