STF5N65M6 Equivalent & Substitute Parts

Part Overview

The STF5N65M6 is an N-channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage and 4A continuous drain current in a TO-220FP package. This device is classified as Active product status and is ROHS3 compliant. Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

STF5N65M6
STMicroelectronicsIn Stock: 964STF5N65M6 Datasheet
STF5N65M6
Current Part
TK6A80E,S4X
Toshiba Semiconductor and StorageIn Stock: 794TK6A80E,S4X Datasheet
TK6A80E,S4X
Similar

Key Parameters

Parameter Value
Manufacturer Part Number STF5N65M6
Manufacturer STMicroelectronics
Category Transistors, FETs, MOSFETs
Device Type N-Channel MOSFET
Packaging TO-220FP
Description MOSFET N-CH 650V 4A TO-220FP
Product Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS Code 8541.29.0095
Current Inventory 935 Pcs New Original In Stock

Substitute Part Grouping Explanation

Substitute parts for the STF5N65M6 are identified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

  • Device Type: N-Channel MOSFET
  • Drain-to-Source Voltage (Vdss): Equal to or greater than 650V
  • Continuous Drain Current (Id): Equal to or greater than 4A at 25°C
  • Mounting Type: Through Hole
  • Package Category: TO-220 series variants
  • Regulatory Compliance: ROHS3 Compliant, REACH Unaffected, EAR99 classification

The substitute part TK6A80E,S4X (Toshiba Semiconductor and Storage) meets these criteria with enhanced electrical ratings: 800V Vdss and 6A continuous drain current, providing design margin while maintaining mechanical compatibility through TO-220 series packaging.

Parameter Comparison

Parameter STF5N65M6 (Main Part) TK6A80E,S4X (Substitute)
Manufacturer STMicroelectronics Toshiba Semiconductor and Storage
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Device Type N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (Vdss) 650V 800V
Continuous Drain Current (Id) @ 25°C 4A 6A (Ta)
Mounting Type Through Hole Through Hole
Package Type TO-220FP TO-220SIS
Product Status Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN EAR99 EAR99
HTSUS Code 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

Substitution Feasibility:

The TK6A80E,S4X is a valid substitute for the STF5N65M6 based on the following engineering criteria:

  1. Electrical Compatibility: The substitute device exceeds the minimum electrical requirements of the main part. With 800V Vdss versus 650V, and 6A continuous drain current versus 4A, the TK6A80E,S4X provides enhanced voltage and current handling capability, ensuring functional compatibility in applications designed for the STF5N65M6.

  2. Regulatory Compliance: Both devices maintain identical compliance status: ROHS3 Compliant, REACH Unaffected, EAR99 classification, and MSL 1 (Unlimited). No additional compliance verification is required.

  3. Mechanical Compatibility: Both devices utilize Through Hole mounting technology within the TO-220 package family (TO-220FP and TO-220SIS variants). Pin configuration and thermal characteristics are compatible with standard TO-220 footprints.

  4. Product Status: Both devices are classified as Active, ensuring continued availability and manufacturer support.

  5. Inventory Availability: The substitute part (TK6A80E,S4X) maintains 776 Pcs in current inventory, providing supply chain flexibility.

Frequently Asked Questions (FAQ)

Q: Can the TK6A80E,S4X directly replace the STF5N65M6 in existing designs?

A: Yes. The TK6A80E,S4X meets or exceeds all critical electrical parameters (Vdss and Id) and shares compatible Through Hole TO-220 packaging. Pin configuration compatibility with TO-220 footprints is maintained. No circuit redesign is required.

Q: What are the key differences between the STF5N65M6 and TK6A80E,S4X?

A: The primary differences are manufacturer (STMicroelectronics versus Toshiba), voltage rating (650V versus 800V), current rating (4A versus 6A), and specific package variant (TO-220FP versus TO-220SIS). The substitute provides higher electrical ratings while maintaining mechanical compatibility.

Q: Are there any compliance or certification concerns when substituting these parts?

A: No. Both devices share identical regulatory compliance: ROHS3 Compliant, REACH Unaffected, EAR99 classification, and MSL 1 (Unlimited). Substitution does not introduce compliance risks.

Q: How do the TO-220FP and TO-220SIS packages differ?

A: Both are Through Hole TO-220 variants with compatible pin configurations suitable for standard TO-220 footprints. The specific variant designation (FP versus SIS) reflects manufacturer-specific package specifications but does not affect mechanical or electrical compatibility in typical applications.

Q: What is the basis for determining substitution compatibility?

A: Substitution compatibility is determined by matching or exceeding the following parameters: device type (N-Channel MOSFET), drain-to-source voltage (Vdss ≥ 650V), continuous drain current (Id ≥ 4A), mounting type (Through Hole), package family (TO-220 series), and regulatory compliance status (ROHS3, REACH, EAR99).

Q: Is the higher current rating (6A versus 4A) of the substitute part a concern?

A: No. Higher current rating indicates enhanced capability and does not create compatibility issues. The substitute device can safely operate at or below the original part's current specifications.

Q: Can the STF5N65M6 be used as a substitute for the TK6A80E,S4X?

A: No. The STF5N65M6 has lower electrical ratings (650V versus 800V, 4A versus 6A). Substitution in the reverse direction would not meet minimum requirements for applications designed for the TK6A80E,S4X.

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