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STF5N52K3 Equivalent & Substitute Parts
Part Overview
The STF5N52K3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 525V drain-to-source voltage and 4.4A continuous drain current in a Through Hole TO-220FP package. This device is part of the SuperMESH3™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 525 | V |
| Current - Continuous Drain (Id) @ 25°C | 4.4 | A |
| Rds On (Max) @ Id, Vgs | 1.5 @ 2.2A, 10V | Ohm |
| Power Dissipation (Max) | 25 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 Full Pack | — |
| Vgs (Max) | ±30 | V |
Substitute Part Grouping Explanation
Substitution of the STF5N52K3 is determined by the following critical electrical and mechanical parameters:
Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 525V to maintain voltage margin in the application circuit.
Current Rating Compatibility: Substitute parts must have a continuous drain current (Id) rating equal to or greater than 4.4A to support the same load conditions.
On-State Resistance (Rds On): Substitute parts must have Rds On values comparable to or lower than 1.5 Ohm to ensure equivalent or improved thermal performance and power dissipation characteristics.
Package Compatibility: Substitute parts must use Through Hole mounting in TO-220 package variants (TO-220FP, TO-220F-3, or TO-220SIS) to ensure mechanical and electrical compatibility with existing PCB layouts.
Gate Voltage Compatibility: Substitute parts must support ±30V gate voltage specification to ensure compatibility with existing gate drive circuits.
Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range.
The following substitute parts meet these criteria and are classified as active products with current availability.
Parameter Comparison
| Parameter | STF5N52K3 (Main) | FQPF5N50CYDTU | TK4A53D(STA4,Q,M) | TK5A55D(STA4,Q,M) | TK6A55DA(STA4,Q,M) |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Fairchild Semiconductor | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vdss (V) | 525 | 500 | 525 | 550 | 550 |
| Id @ 25°C (A) | 4.4 | 5 | 4 | 5 | 5.5 |
| Rds On (Max) @ 10V (Ohm) | 1.5 @ 2.2A | 1.4 @ 2.5A | 1.7 @ 2A | 1.7 @ 2.5A | 1.48 @ 2.8A |
| Power Dissipation (Max) (W) | 25 | 38 | 35 | 35 | 35 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | to 150 | to 150 | to 150 |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack, Formed Leads | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Vgs (Max) (V) | ±30 | ±30 | ±30 | ±30 | ±30 |
| Product Status | Obsolete | Active | Active | Active | Active |
Engineering Selection Recommendations
Primary Substitute: TK6A55DA(STA4,Q,M)
The TK6A55DA from Toshiba Semiconductor and Storage is the preferred substitute for the STF5N52K3. This device exceeds the voltage rating (550V vs. 525V), provides superior current capability (5.5A vs. 4.4A), and delivers improved on-state resistance (1.48 Ohm vs. 1.5 Ohm). The TK6A55DA is classified as active with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). The TO-220SIS package maintains mechanical compatibility with existing PCB designs.
Secondary Substitute: TK5A55D(STA4,Q,M)
The TK5A55D from Toshiba Semiconductor and Storage provides equivalent voltage rating (550V) and current capability (5A) with comparable on-state resistance (1.7 Ohm). This device is active, ROHS3 compliant, and offers unlimited moisture sensitivity level. The TO-220SIS package is mechanically compatible.
Tertiary Substitute: FQPF5N50CYDTU
The FQPF5N50CYDTU from Fairchild Semiconductor operates at a lower voltage rating (500V vs. 525V) but provides higher current capability (5A vs. 4.4A) and superior on-state resistance (1.4 Ohm vs. 1.5 Ohm). This device is active and suitable for applications where the 500V rating is acceptable. The TO-220F-3 package with formed leads requires verification of PCB compatibility.
Alternative Substitute: TK4A53D(STA4,Q,M)
The TK4A53D from Toshiba Semiconductor and Storage matches the voltage rating (525V) but provides lower current capability (4A vs. 4.4A) and higher on-state resistance (1.7 Ohm vs. 1.5 Ohm). This device is active and RoHS compliant. Use this substitute only when current and thermal performance margins are not critical.
All substitute parts are classified as active products with current manufacturing status and full compliance certifications, ensuring long-term availability and supply chain continuity.
Frequently Asked Questions (FAQ)
Q: Can the FQPF5N50CYDTU be used as a direct replacement for the STF5N52K3?
A: The FQPF5N50CYDTU operates at 500V, which is 25V below the STF5N52K3 rating of 525V. This device is suitable only for applications where the lower voltage rating does not compromise circuit safety margins. The formed leads on the TO-220F-3 package require verification against existing PCB hole patterns and lead spacing.
Q: What is the primary advantage of the TK6A55DA over the STF5N52K3?
A: The TK6A55DA provides higher voltage rating (550V vs. 525V), higher current capability (5.5A vs. 4.4A), and lower on-state resistance (1.48 Ohm vs. 1.5 Ohm). Additionally, the TK6A55DA is an active product with guaranteed long-term availability, whereas the STF5N52K3 is obsolete.
Q: Are all substitute parts compatible with the same PCB layout?
A: All substitute parts use Through Hole TO-220 package variants. The TO-220FP (main part), TO-220F-3 (FQPF5N50CYDTU), and TO-220SIS (Toshiba devices) have identical lead spacing and pin configuration. However, the FQPF5N50CYDTU features formed leads, which may require verification of PCB hole alignment and lead bend radius compatibility.
Q: What is the difference between the TK5A55D and TK6A55DA?
A: Both devices are from Toshiba's π-MOSVII series with identical voltage rating (550V) and operating temperature range. The TK6A55DA provides higher current capability (5.5A vs. 5A) and lower on-state resistance (1.48 Ohm vs. 1.7 Ohm), resulting in improved thermal performance and lower power dissipation in high-current applications.
Q: Can the TK4A53D be used in applications requiring 4.4A continuous current?
A: The TK4A53D is rated for 4A continuous drain current, which is below the STF5N52K3 specification of 4.4A. This device is suitable only for applications where the actual operating current does not exceed 4A, or where thermal derating is acceptable.
Q: Are all substitute parts RoHS compliant?
A: The TK6A55DA, TK5A55D, and TK4A53D are ROHS3 compliant. The FQPF5N50CYDTU compliance status is not specified in the provided data. Verify RoHS compliance requirements with the specific application and regulatory standards.
Q: What is the moisture sensitivity level (MSL) for all substitute parts?
A: The TK6A55DA, TK5A55D, and TK4A53D all have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. The FQPF5N50CYDTU MSL rating is not specified in the provided data.
Q: Which substitute part offers the best thermal performance?
A: The TK6A55DA offers the best thermal performance with the lowest on-state resistance (1.48 Ohm) and highest current capability (5.5A), resulting in the lowest power dissipation at equivalent current levels. The FQPF5N50CYDTU provides comparable on-state resistance (1.4 Ohm) but operates at a lower voltage rating.
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