STF35N65DM2 Equivalent & Substitute Parts

Part Overview

The STF35N65DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 32A continuous drain current at 25°C. This device operates in the Through Hole TO-220FP package and is part of the MDmesh™ DM2 series. The part is Active status and RoHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design flexibility, or application-specific requirements.

Substiute Parts

STF35N65DM2

STMicroelectronicsIn Stock: 2228STF35N65DM2 Datasheet

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R6030KNX

Rohm SemiconductorIn Stock: 2209R6030KNX Datasheet

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R6030KNXC7

Rohm SemiconductorIn Stock: 2440R6030KNXC7 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STF35N65DM2 are identified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

• FET Type: N-Channel
• Mounting Type: Through Hole
• Package Family: TO-220 (TO-220FP, TO-220FM)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Drive Voltage: 10V

Allowable Variation Parameters:

• Drain to Source Voltage (Vdss): 600V minimum (substitute parts rated 600V are acceptable for applications requiring ≤600V)
• Continuous Drain Current (Id): 30A minimum (substitute parts rated 30A are acceptable for applications requiring ≤30A)
• Rds On: Higher values acceptable if application thermal budget permits
• Power Dissipation: Higher values acceptable
• Gate Charge: Similar range acceptable (56 nC to 56.3 nC)
• Vgs(th): Matching threshold voltage acceptable (5V)

The substitute parts R6030KNX and R6030KNXC7 (both Rohm Semiconductor) meet these criteria with 600V Vdss and 30A Id ratings, compatible TO-220FM packaging, and identical operating temperature range.

Parameter Comparison

Engineering Selection Recommendations

STF35N65DM2 (Primary Part):

• Select when 650V Vdss rating is required for the application
• Select when 32A continuous drain current specification is required
• Select when 40W power dissipation limit is a design constraint
• Active product status with full manufacturer support
• RoHS3 and REACH compliant

R6030KNXC7 (Preferred Substitute):

• Tube packaging matches the primary part's packaging format
• Select for applications rated ≤600V Vdss and ≤30A Id
• Higher power dissipation rating (86W) provides thermal margin
• Active product status with full manufacturer support
• RoHS3 and REACH compliant
• 2383 Pcs inventory available

R6030KNX (Alternative Substitute):

• Bulk packaging differs from primary part
• Select for applications rated ≤600V Vdss and ≤30A Id
• Higher power dissipation rating (86W) provides thermal margin
• Active product status with full manufacturer support
• RoHS3 and REACH compliant
• 2100 Pcs inventory available

All parts share identical operating temperature range (-55°C to 150°C), gate charge characteristics (56-56.3 nC @ 10V), and gate threshold voltage (5V). Substitution is valid when application voltage and current requirements do not exceed 600V and 30A respectively.

Frequently Asked Questions (FAQ)

Q: Can R6030KNXC7 or R6030KNX be used as direct replacements for STF35N65DM2?

A: R6030KNXC7 and R6030KNX are suitable substitutes for applications requiring ≤600V Vdss and ≤30A continuous drain current. The STF35N65DM2 is rated for 650V and 32A, so substitution is valid only when the application does not require these higher ratings.

Q: What is the difference between R6030KNXC7 and R6030KNX?

A: Both parts are electrically identical with the same electrical specifications. The primary difference is packaging: R6030KNXC7 is supplied in Tube packaging, while R6030KNX is supplied in Bulk packaging. R6030KNXC7 matches the Tube packaging format of the STF35N65DM2.

Q: Are the TO-220FP and TO-220FM packages mechanically compatible?

A: Both TO-220FP and TO-220FM are Through Hole TO-220-3 Full Pack variants. They share the same pin configuration and mounting footprint, making them mechanically compatible for PCB assembly.

Q: What are the key electrical differences between these parts?

A: The STF35N65DM2 has a higher Vdss rating (650V vs. 600V) and higher continuous drain current (32A vs. 30A). The substitute parts have higher Rds On values (130 mOhm vs. 110 mOhm) and higher power dissipation ratings (86W vs. 40W). Gate charge and threshold voltage are nearly identical across all parts.

Q: Are all three parts RoHS3 and REACH compliant?

A: Yes. STF35N65DM2, R6030KNXC7, and R6030KNX are all RoHS3 compliant and REACH unaffected.

Q: What is the operating temperature range for these MOSFETs?

A: All three parts operate across the identical temperature range of -55°C to 150°C (TJ).

Q: Can I use these parts in applications exceeding 600V?

A: No. The substitute parts R6030KNXC7 and R6030KNX are rated for 600V maximum Vdss. Applications requiring >600V must use the STF35N65DM2 (650V rated).

Q: What is the gate charge specification and why is it important?

A: Gate charge (Qg) is 56-56.3 nC @ 10V across all parts. This parameter determines the energy required to switch the MOSFET and affects gate driver design. The near-identical values ensure compatible gate drive circuits.