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STF30N10F7 Equivalent & Substitute Parts
Part Overview
The STF30N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 24A continuous drain current at 25°C. The device is housed in a TO-220FP through-hole package and is part of the DeepGATE™ and STripFET™ VII series. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-220 package family.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 100 | V |
| Current - Continuous Drain (Id) @ 25°C | 24 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 16A, 10V | — |
| Vgs(th) (Max) @ Id | 4.5 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 | nC @ 10V |
| Power Dissipation (Max) | 25 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 Full Pack | — |
Substitute Part Grouping Explanation
Substitution eligibility for the STF30N10F7 is determined by strict alignment with the following critical parameters:
Mandatory Matching Criteria:
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V minimum
- Package Family: TO-220 through-hole configuration
- Operating Temperature Range: -55°C to 175°C (TJ)
- Technology: MOSFET (Metal Oxide)
Performance Compatibility Criteria:
- Continuous Drain Current (Id): Equal to or greater than 24A at 25°C
- On-Resistance (Rds On): Equal to or less than 24 mOhm at specified conditions
- Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
- Gate Charge (Qg): Acceptable for gate drive circuit compatibility
Compliance Requirements:
- RoHS3 Compliant
- REACH Unaffected
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
The substitute parts listed below satisfy these criteria within the electrical and mechanical constraints of the STF30N10F7 application space.
Parameter Comparison
| Parameter | STF30N10F7 (Main) | AOTF2910L | FQPF70N10 |
|---|---|---|---|
| Manufacturer | STMicroelectronics | Alpha & Omega Semiconductor Inc. | onsemi |
| FET Type | N-Channel | N-Channel | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 24 A (Tc) | 22 A (Tc) | 35 A (Tc) |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 16A, 10V | 24 mOhm @ 20A, 10V | 23 mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5 V @ 250µA | 2.7 V @ 250µA | 4 V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10V | 15 nC @ 10V | 110 nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 50V | 1190 pF @ 50V | 3300 pF @ 25V |
| Power Dissipation (Max) | 25 W (Tc) | 27 W (Tc) | 62 W (Tc) |
| Operating Temperature Range | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Product Status | Obsolete | Active | Obsolete |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
AOTF2910L (Alpha & Omega Semiconductor Inc.)
The AOTF2910L is classified as an active product with current manufacturing status, providing long-term availability and supply chain stability. This device meets all mandatory electrical parameters with 100V Vdss rating and 22A continuous drain current, representing a 92% current capacity relative to the STF30N10F7. On-resistance is maintained at 24 mOhm, matching the main part specification. Gate charge is reduced to 15 nC, resulting in lower gate drive power requirements. Input capacitance is slightly lower at 1190 pF. Power dissipation capability is 27W, exceeding the main part's 25W rating. The AOTF2910L is RoHS3 compliant and REACH unaffected, meeting all regulatory requirements. This substitute is suitable for applications where the 2A current reduction is acceptable and where active product status is prioritized.
FQPF70N10 (onsemi)
The FQPF70N10 is classified as obsolete, matching the product status of the main part. This device provides enhanced current capacity at 35A continuous drain current, representing a 146% increase relative to the STF30N10F7. On-resistance is 23 mOhm at 17.5A, maintaining compatibility with the main part specification. However, gate charge is significantly elevated at 110 nC compared to 19 nC in the main part, requiring higher gate drive power and potentially affecting switching frequency performance. Input capacitance is substantially higher at 3300 pF, introducing additional gate drive circuit considerations. Power dissipation capability is 62W, providing substantial thermal margin. The FQPF70N10 is RoHS3 compliant and REACH unaffected. This substitute is applicable for applications requiring higher current capacity and thermal headroom, with gate drive circuit modifications to accommodate increased gate charge.
Frequently Asked Questions (FAQ)
Q: Can the AOTF2910L directly replace the STF30N10F7 without circuit modifications?
A: The AOTF2910L is electrically compatible with the STF30N10F7 across all critical parameters. The 2A reduction in continuous drain current (from 24A to 22A) requires verification that the application does not demand the full 24A specification. Gate charge reduction from 19 nC to 15 nC may improve gate drive efficiency but does not necessitate circuit changes. The TO-220-3 package is mechanically identical, permitting direct board-level substitution.
Q: What are the implications of the FQPF70N10's higher gate charge specification?
A: The FQPF70N10 exhibits gate charge of 110 nC at 10V, compared to 19 nC for the STF30N10F7. This 5.8× increase in gate charge requires proportionally higher gate drive current or extended switching times. Gate drive circuits must be evaluated to confirm adequate current sourcing capability. Applications operating at high switching frequencies may experience increased gate drive power dissipation and potential switching speed degradation. Input capacitance is also elevated at 3300 pF, further increasing gate drive requirements.
Q: Are both substitute parts available in the same packaging configuration?
A: Both the AOTF2910L and FQPF70N10 are supplied in TO-220-3 full pack through-hole packages, identical to the STF30N10F7. The AOTF2910L is packaged in tubes, while the FQPF70N10 is also tube-packaged. Both devices are mechanically compatible with existing PCB layouts designed for the STF30N10F7.
Q: Which substitute part is recommended for new designs?
A: The AOTF2910L is recommended for new designs due to its active product status, ensuring long-term availability and manufacturing continuity. The FQPF70N10, while electrically capable, shares obsolete status with the main part, limiting future procurement reliability.
Q: How do the on-resistance specifications compare across all three devices?
A: All three devices maintain on-resistance at or below 24 mOhm under specified conditions. The STF30N10F7 specifies 24 mOhm at 16A and 10V gate voltage. The AOTF2910L specifies 24 mOhm at 20A and 10V gate voltage, demonstrating equivalent performance at higher current. The FQPF70N10 specifies 23 mOhm at 17.5A and 10V gate voltage, providing marginal improvement. All three devices are suitable for applications where on-resistance performance is critical.
Q: What compliance certifications apply to all substitute parts?
A: All three devices—STF30N10F7, AOTF2910L, and FQPF70N10—are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is 1 (unlimited) for the STF30N10F7 and AOTF2910L. The FQPF70N10 lists MSL as not applicable. All devices carry ECCN classification EAR99 and HTSUS code 8541.29.0095, permitting unrestricted commercial distribution.
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