STF26N65DM2 Equivalent & Substitute Parts

Part Overview

The STF26N65DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 20A continuous drain current at 25°C. This device operates in the MDmesh™ DM2 series and is housed in a TO-220FP through-hole package. The part is Active status and RoHS3 compliant, making it suitable for high-voltage switching applications requiring reliable performance across industrial temperature ranges.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required for manufacturing optimization. Substitutes must maintain electrical compatibility within the specified parameter tolerances and mechanical compatibility with the TO-220 package family.

Substiute Parts

STF26N65DM2

STMicroelectronicsIn Stock: 1726STF26N65DM2 Datasheet

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R6020ENX

Rohm SemiconductorIn Stock: 8797R6020ENX Datasheet

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R6024ENX

Rohm SemiconductorIn Stock: 150339R6024ENX Datasheet

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R6024KNX

Rohm SemiconductorIn Stock: 2541R6024KNX Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STF26N65DM2 is determined by the following critical electrical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 650V
• Continuous Drain Current (Id): Substitute must equal or exceed 20A at 25°C
• On-State Resistance (Rds On): Substitute must not exceed 190mOhm at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Substitute must fall within acceptable switching range
• Package Type: Substitute must be compatible with TO-220 through-hole mounting

Secondary Compatibility Parameters:

• Gate Charge (Qg): Lower values reduce switching losses; higher values acceptable if within thermal limits
• Power Dissipation: Substitute must accommodate thermal requirements of the application
• Operating Temperature Range: Substitute must support the full -55°C to 150°C range or application-specific subset
• FET Technology: All substitutes must be Metal Oxide Semiconductor (MOSFET) N-Channel devices

The three identified substitute parts (R6020ENX, R6024ENX, R6024KNX) are grouped based on voltage class (600V), current rating (20A or 24A), and TO-220 package compatibility. Each substitute presents trade-offs in gate charge, power dissipation, and input capacitance that must be evaluated against specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

R6020ENX (Rohm Semiconductor)

The R6020ENX is a direct current-rated equivalent at 20A continuous drain current. It operates at 600V, which is 50V below the STF26N65DM2 rating. On-state resistance is marginally higher at 196mOhm compared to 190mOhm. Gate charge is elevated at 60nC, resulting in increased switching losses. Power dissipation capability is superior at 50W. This substitute is suitable for applications where the 600V rating is sufficient and higher power dissipation capacity is beneficial. The part is RoHS3 compliant and REACH unaffected. Operating temperature specification is limited to 150°C maximum (no lower bound specified).

R6024ENX (Rohm Semiconductor)

The R6024ENX provides higher current capacity at 24A, exceeding the 20A requirement. Vdss is 600V. On-state resistance is lower at 165mOhm, providing improved efficiency. Gate charge is 70nC, the highest among substitutes, increasing switching losses. Power dissipation is rated at 40W. This substitute is applicable when higher current margin is required and the 600V rating is acceptable. RoHS3 and REACH compliance are confirmed. Operating temperature is limited to 150°C maximum.

R6024KNX (Rohm Semiconductor)

The R6024KNX matches the STF26N65DM2 operating temperature range (-55°C to 150°C), providing full temperature compatibility. Current rating is 24A at 600V. On-state resistance is 165mOhm. Gate charge is 45nC, lower than R6020ENX and R6024ENX, reducing switching losses. Power dissipation is highest at 74W, supporting demanding thermal environments. This substitute is optimal when full temperature range operation and low switching losses are required. RoHS3 and REACH compliance are confirmed.

Selection Basis:

All three substitutes maintain N-Channel MOSFET technology, TO-220 package family compatibility, and regulatory compliance (RoHS3, REACH). The primary trade-off is voltage rating (600V vs. 650V) against improved current capacity and power dissipation in the Rohm devices. R6024KNX is preferred when temperature range matching is critical. R6024ENX is preferred for efficiency-focused designs. R6020ENX is preferred for direct current replacement with thermal margin.

Frequently Asked Questions (FAQ)

Q: Can the R6020ENX, R6024ENX, or R6024KNX be used in place of the STF26N65DM2 without circuit modification?

A: All three substitutes are mechanically compatible with TO-220 through-hole mounting. Electrical compatibility depends on application voltage and current requirements. The 600V rating of all substitutes is 50V lower than the STF26N65DM2. If the application operates below 600V, substitution is feasible. If the application requires 650V margin, substitution is not recommended. On-state resistance differences (165–196mOhm vs. 190mOhm) are within typical design tolerances for switching applications.

Q: What is the difference between TO-220FP and TO-220FM packages?

A: Both TO-220FP and TO-220FM are TO-220-3 full pack through-hole devices with identical pin configurations and mounting footprints. The designations indicate manufacturer-specific package variants. Mechanical and electrical compatibility is maintained across these variants for PCB mounting and thermal management purposes.

Q: Which substitute has the lowest switching losses?

A: R6024KNX has the lowest gate charge at 45nC, resulting in reduced switching losses compared to R6020ENX (60nC) and R6024ENX (70nC). Lower gate charge reduces the energy required to switch the device on and off, improving efficiency in high-frequency applications.

Q: Are all substitutes suitable for the full -55°C to 150°C temperature range?

A: R6024KNX explicitly supports -55°C to 150°C, matching the STF26N65DM2. R6020ENX and R6024ENX specify operation to 150°C maximum without a stated lower temperature limit. If the application requires operation below 0°C, R6024KNX is the only confirmed substitute.

Q: What is the impact of higher input capacitance in the substitutes?

A: R6024ENX (1650pF) and R6024KNX (2000pF) have higher input capacitance than the STF26N65DM2 (1480pF). Higher input capacitance increases gate charge and switching time, potentially increasing switching losses and reducing maximum switching frequency. This effect is most pronounced in R6024KNX. Applications with strict frequency or efficiency requirements should account for this parameter.

Q: Can the higher power dissipation ratings of the substitutes be relied upon?

A: Power dissipation ratings (50W for R6020ENX, 40W for R6024ENX, 74W for R6024KNX) indicate the device's thermal capability under specified conditions. These ratings do not increase the application's power budget; they indicate the device can safely dissipate more heat than the STF26N65DM2 (30W). Substitutes with higher power ratings provide thermal margin but do not reduce the actual power dissipated by the circuit.

Q: Is the 50V voltage difference between 650V and 600V significant?

A: The significance depends on application design margin. If the application operates at 500V with a 150V safety margin, the 600V rating of substitutes provides 100V margin, which is acceptable. If the application operates at 580V with a 70V margin, the 600V rating provides only 20V margin, which may be insufficient. Circuit voltage stress analysis is required to determine acceptability.