STF25N10F7 Equivalent & Substitute Parts

Part Overview

The STF25N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 19A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220FP configuration and is part of the DeepGATE™ and STripFET™ VII series. The STF25N10F7 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

STF25N10F7

STMicroelectronicsIn Stock: 1286STF25N10F7 Datasheet

Current PartRFQ

AOTF2916L

Alpha & Omega Semiconductor Inc.In Stock: 2485AOTF2916L Datasheet

SimilarRFQ

FDPF3860T

onsemiIn Stock: 6443FDPF3860T Datasheet

SimilarRFQ

IRFI1310NPBF

Infineon TechnologiesIn Stock: 15361IRFI1310NPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STF25N10F7 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 100V
• Continuous Drain Current (Id): Must support minimum 19A at 25°C
• On-State Resistance (Rds On): Must not significantly exceed 35mOhm to maintain thermal performance
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
• Operating Temperature Range: Must support -55°C to 175°C minimum

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package Type: TO-220-3 Full Pack configuration required
• Pin Configuration: Standard TO-220 three-pin layout

The substitute parts listed below meet these criteria within acceptable engineering tolerances for direct replacement in applications designed for the STF25N10F7.

Parameter Comparison

Engineering Selection Recommendations

IRFI1310NPBF (Infineon Technologies)

The IRFI1310NPBF is an active product offering superior current handling at 24A continuous drain current, exceeding the STF25N10F7 specification of 19A. This device maintains compatible voltage ratings (100V Vdss) and on-state resistance (36mOhm at 13A, 10V). The IRFI1310NPBF supports the full operating temperature range of -55°C to 175°C and is ROHS3 compliant. Higher gate charge (120nC) and power dissipation (56W) indicate increased switching losses and thermal output, requiring thermal management evaluation in applications with tight thermal budgets. This part is suitable for direct replacement where higher current capacity is acceptable.

AOTF2916L (Alpha & Omega Semiconductor Inc.)

The AOTF2916L is an active product with continuous drain current of 17A at 25°C, slightly below the STF25N10F7 specification of 19A. On-state resistance is 34mOhm at 10A, 10V, providing comparable performance. This device maintains 100V Vdss rating and supports the full -55°C to 175°C operating temperature range with ROHS3 compliance. Lower gate charge (20nC) and power dissipation (23.5W at Tc) indicate reduced switching losses compared to the main part. This part is suitable for applications where current requirements do not exceed 17A and lower switching losses are beneficial.

FDPF3860T (onsemi)

The FDPF3860T is an active product with continuous drain current of 20A at 25°C, exceeding the STF25N10F7 specification of 19A. On-state resistance is 38.2mOhm at 5.9A, 10V, representing a slight increase from the main part. This device maintains 100V Vdss rating and ROHS3 compliance. The operating temperature range is -55°C to 150°C, which does not extend to the full 175°C upper limit of the STF25N10F7. Higher gate charge (35nC) and power dissipation (33.8W) indicate increased switching losses. This part is suitable for replacement in applications where the maximum operating temperature does not exceed 150°C.

Frequently Asked Questions (FAQ)

Q: Can the IRFI1310NPBF replace the STF25N10F7 in all applications?

A: The IRFI1310NPBF meets all electrical and mechanical compatibility criteria for the STF25N10F7. However, the higher gate charge (120nC versus 14nC) and power dissipation (56W versus 25W) require verification that the application's gate drive circuit and thermal management system can accommodate these increased values. Direct pin-for-pin replacement is mechanically feasible in TO-220-3 Full Pack configurations.

Q: What is the primary limitation of the AOTF2916L as a substitute?

A: The AOTF2916L has a continuous drain current rating of 17A at 25°C, which is 2A below the STF25N10F7 specification of 19A. This part is suitable only for applications where the actual operating current does not exceed 17A. The lower gate charge and power dissipation may provide benefits in switching-intensive applications.

Q: Why does the FDPF3860T have a reduced maximum operating temperature?

A: The FDPF3860T is specified for -55°C to 150°C operating temperature, compared to the STF25N10F7 range of -55°C to 175°C. This part is not suitable for applications requiring operation above 150°C junction temperature. Verify application thermal requirements before selection.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts (IRFI1310NPBF, AOTF2916L, and FDPF3860T) are packaged in TO-220-3 Full Pack configuration, providing mechanical compatibility with the STF25N10F7. Through Hole mounting type is consistent across all parts.

Q: What compliance certifications apply to all listed parts?

A: All parts, including the main STF25N10F7 and the three substitutes, are ROHS3 compliant and REACH unaffected. All are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The STF25N10F7 has 14nC gate charge, while substitutes range from 20nC to 120nC. Higher gate charge requires stronger gate drive circuits and increases switching losses. Verify that the existing gate drive circuit can supply sufficient current to charge the gate within the required switching time.

Q: Can thermal performance be directly compared between these parts?

A: Thermal performance depends on both power dissipation rating and on-state resistance. The STF25N10F7 has 25W power dissipation and 35mOhm Rds On. Substitutes have varying ratings: IRFI1310NPBF (56W, 36mOhm), AOTF2916L (23.5W, 34mOhm), and FDPF3860T (33.8W, 38.2mOhm). Actual thermal performance in an application depends on junction temperature, ambient conditions, and heat dissipation design.