STF24N65M2 Equivalent & Substitute Parts

Part Overview

The STF24N65M2 is an N-Channel 650 V MOSFET manufactured by STMicroelectronics, designed for high-voltage switching applications. This device operates at continuous drain current of 16A (Tc) with a maximum drain-to-source voltage of 650 V and is housed in a TO-220FP through-hole package. The part is currently in active production status with 2376 units in stock. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	16	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	230 mOhm @ 8A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	29	nC @ 10V
Power Dissipation (Max)	30	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-220FP
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STF24N65M2 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 650 V nominal or higher
Continuous Drain Current (Id): 15 A or higher at 25°C
On-State Resistance (Rds On): Comparable performance at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within acceptable switching range
Power Dissipation: Sufficient thermal capability for application requirements
Mounting Type: Through-hole TO-220 package family
Operating Temperature Range: -55°C to 150°C minimum
Compliance: ROHS3 compliant

Substitute Parts Identified:

AOTF15S60L (Alpha & Omega Semiconductor): 600 V, 15 A, TO-220F package. Vdss is 50 V lower; current rating is 1 A lower. Suitable for applications with reduced voltage margin.
AOTF15S65L (Alpha & Omega Semiconductor): 650 V, 15 A, TO-220F package. Matches Vdss; current rating is 1 A lower. Direct voltage-class equivalent.
IPA60R280P7XKSA1 (Infineon Technologies CoolMOS™ P7): 600 V, 12 A, PG-TO220-FP package. Vdss is 50 V lower; current rating is 4 A lower. Suitable for reduced current applications.
IPA80R280P7XKSA1 (Infineon Technologies CoolMOS™): 800 V, 17 A, PG-TO220-3-31 package. Vdss is 150 V higher; current rating is 1 A higher. Suitable for higher voltage applications.
IPAN80R280P7XKSA1 (Infineon Technologies CoolMOS™ P7): 800 V, 17 A, PG-TO220-3-FP package. Vdss is 150 V higher; current rating is 1 A higher. Suitable for higher voltage applications.
SIHA17N80E-E3 (Vishay Siliconix): 800 V, 15 A, TO-220 Full Pack. Vdss is 150 V higher; current rating matches at 15 A. Suitable for higher voltage applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Power Diss. (W)	Package	Temp Range (°C)
STF24N65M2	STMicroelectronics	650	16	230 @ 8A, 10V	4 @ 250µA	29 @ 10V	30	TO-220FP	-55 to 150
AOTF15S60L	Alpha & Omega	600	15	290 @ 7.5A, 10V	3.8 @ 250µA	15.6 @ 10V	27.8	TO-220F	-55 to 150
AOTF15S65L	Alpha & Omega	650	15	290 @ 7.5A, 10V	4 @ 250µA	17.2 @ 10V	34	TO-220F	-55 to 150
IPA60R280P7XKSA1	Infineon	600	12	280 @ 3.8A, 10V	4 @ 190µA	18 @ 10V	24	PG-TO220-FP	-55 to 150
IPA80R280P7XKSA1	Infineon	800	17	280 @ 7.2A, 10V	3.5 @ 360µA	36 @ 10V	30	PG-TO220-3-31	-55 to 150
IPAN80R280P7XKSA1	Infineon	800	17	280 @ 7.2A, 10V	3.5 @ 360µA	36 @ 10V	30	PG-TO220-3-FP	-55 to 150
SIHA17N80E-E3	Vishay Siliconix	800	15	290 @ 8.5A, 10V	4 @ 250µA	122 @ 10V	35	TO-220	-55 to 150

Engineering Selection Recommendations

Direct Voltage-Class Equivalent: AOTF15S65L is the closest functional equivalent to STF24N65M2, matching the 650 V voltage rating and operating temperature range. Both devices are ROHS3 compliant and housed in TO-220 package variants. The 1 A reduction in continuous drain current (15 A vs. 16 A) is acceptable for applications not requiring the full 16 A specification.

Lower Voltage Alternative: AOTF15S60L operates at 600 V, suitable for applications with reduced voltage margin requirements. This part provides 15 A continuous drain current and is ROHS3 compliant with identical operating temperature range.

Higher Voltage Alternatives: IPA80R280P7XKSA1, IPAN80R280P7XKSA1, and SIHA17N80E-E3 all operate at 800 V, providing increased voltage headroom. These parts are suitable for applications requiring higher voltage ratings. IPA80R280P7XKSA1 and IPAN80R280P7XKSA1 are functionally identical CoolMOS™ P7 devices differing only in package designation (PG-TO220-3-31 vs. PG-TO220-3-FP). SIHA17N80E-E3 provides 15 A continuous drain current matching the lower-current substitute options.

Lower Current Alternative: IPA60R280P7XKSA1 operates at 600 V with 12 A continuous drain current, suitable for reduced current applications. This CoolMOS™ P7 device is ROHS3 compliant and maintains the full operating temperature range.

All substitute parts maintain ROHS3 compliance and -55°C to 150°C operating temperature range, ensuring regulatory and thermal compatibility with the original STF24N65M2 specification.

Frequently Asked Questions (FAQ)

Q: Can AOTF15S65L directly replace STF24N65M2 in all applications?

A: AOTF15S65L is functionally compatible for applications not requiring the full 16 A continuous drain current specification. Both devices operate at 650 V, share identical gate threshold voltage (4 V @ 250µA), and maintain the same operating temperature range (-55°C to 150°C). The 1 A reduction in continuous drain current (15 A vs. 16 A) must be verified against application requirements. Both parts are ROHS3 compliant and housed in TO-220 package variants.

Q: What is the difference between IPA80R280P7XKSA1 and IPAN80R280P7XKSA1?

A: These devices are electrically identical CoolMOS™ P7 MOSFETs with 800 V rating and 17 A continuous drain current. The difference is in the supplier device package designation: IPA80R280P7XKSA1 uses PG-TO220-3-31 while IPAN80R280P7XKSA1 uses PG-TO220-3-FP. Both are through-hole TO-220 package variants and are mechanically compatible with standard TO-220 footprints.

Q: Why does SIHA17N80E-E3 have significantly higher gate charge (122 nC vs. 29 nC)?

A: Gate charge is a device-specific parameter determined by the MOSFET's internal capacitance structure and manufacturing process. SIHA17N80E-E3 exhibits higher gate charge due to its Vishay Siliconix design and process technology. Higher gate charge results in slower switching speed and increased driver power requirements. This parameter must be evaluated against driver circuit capabilities in the target application.

Q: Can I use a 600 V rated MOSFET in a 650 V application?

A: No. AOTF15S60L and IPA60R280P7XKSA1 are rated for 600 V maximum drain-to-source voltage. Using these parts in applications requiring 650 V operation exceeds the device rating and creates reliability risk. Use only parts rated for 650 V or higher (AOTF15S65L, IPA80R280P7XKSA1, IPAN80R280P7XKSA1, or SIHA17N80E-E3) in 650 V applications.

Q: Are all substitute parts available in the same TO-220FP package as STF24N65M2?

A: No. Substitute parts use TO-220 package variants: AOTF15S60L and AOTF15S65L use TO-220F; IPA60R280P7XKSA1 uses PG-TO220-FP; IPA80R280P7XKSA1 uses PG-TO220-3-31; IPAN80R280P7XKSA1 uses PG-TO220-3-FP; SIHA17N80E-E3 uses TO-220 Full Pack. All are through-hole TO-220 family packages with compatible pin configurations and PCB footprints.

Q: What does ROHS3 compliance mean for component substitution?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All listed substitute parts are ROHS3 compliant, ensuring regulatory compatibility with the original STF24N65M2 for applications subject to ROHS requirements.

Q: Which substitute part has the lowest on-state resistance?

A: IPA80R280P7XKSA1 and IPAN80R280P7XKSA1 both exhibit 280 mOhm on-state resistance at 7.2A and 10V gate voltage, compared to STF24N65M2's 230 mOhm at 8A and 10V. The STF24N65M2 maintains the lowest on-state resistance among all listed parts. Lower on-state resistance reduces conduction losses and heat dissipation in switching applications.

Q: Can I use AOTF15S60L if my application operates below 600 V?

A: Yes. AOTF15S60L is rated for 600 V maximum drain-to-source voltage and is suitable for applications operating at voltages below 600 V. The device provides 15 A continuous drain current and is ROHS3 compliant with -55°C to 150°C operating temperature range, matching the thermal and regulatory requirements of STF24N65M2.

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