STF24N60DM2 Equivalent & Substitute Parts

Part Overview

The STF24N60DM2 is an N-channel 600 V MOSFET manufactured by STMicroelectronics, designed for through-hole applications in the TO-220 package. This device operates at 18A continuous drain current with a typical on-resistance of 0.175 Ohm and is rated for 30W power dissipation. The part is currently in active production status.

Substitute parts are necessary when the STF24N60DM2 becomes unavailable, when design requirements demand higher current ratings, improved thermal performance, or when alternative manufacturers' components are preferred for supply chain diversification or cost optimization.

Substiute Parts

STF24N60DM2
STMicroelectronicsIn Stock: 20066STF24N60DM2 Datasheet
STF24N60DM2
Current Part
AOTF190A60L
Alpha & Omega Semiconductor Inc.In Stock: 20272AOTF190A60L Datasheet
AOTF190A60L
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FCPF165N65S3L1
onsemiIn Stock: 1297FCPF165N65S3L1 Datasheet
FCPF165N65S3L1
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FCPF190N60E
onsemiIn Stock: 20457FCPF190N60E Datasheet
FCPF190N60E
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R6018VNXC7G
Rohm SemiconductorIn Stock: 2173R6018VNXC7G Datasheet
R6018VNXC7G
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TK20A60W,S5VX
Toshiba Semiconductor and StorageIn Stock: 886TK20A60W,S5VX Datasheet
TK20A60W,S5VX
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 18 A
On-Resistance (Rds On Max) @ 9A, 10V 200 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 5 V
Gate Charge (Qg) @ 10V 29 nC
Power Dissipation (Max) 30 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the STF24N60DM2 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 600 V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Mounting Type: Must be Through Hole
  • Package Family: Must be TO-220 variant (TO-220-3, TO-220F, TO-220F-3, TO-220FM, TO-220SIS)
  • Operating Temperature Range: Must support -55°C to 150°C minimum
  • Continuous Drain Current (Id): Must equal or exceed 18 A at 25°C

Performance Parameters for Substitution:

  • On-Resistance (Rds On): Lower or equal values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Power Dissipation: Equal or higher ratings provide thermal margin
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry

All substitute parts listed meet the mandatory compatibility criteria and operate within the same voltage and temperature specifications as the STF24N60DM2.

Parameter Comparison

Parameter STF24N60DM2 AOTF190A60L FCPF165N65S3L1 FCPF190N60E R6018VNXC7G TK20A60W,S5VX
Manufacturer STMicroelectronics Alpha & Omega Semiconductor onsemi onsemi Rohm Semiconductor Toshiba Semiconductor
Vdss (V) 600 600 650 600 600 600
Id @ 25°C (A) 18 20 19 20.6 10 20
Rds On Max (mOhm) 200 @ 9A, 10V 190 @ 7.6A, 10V 165 @ 9.5A, 10V 190 @ 10A, 10V 204 @ 4A, 15V 155 @ 10A, 10V
Vgs(th) Max (V) 5 @ 250µA 4.6 @ 250µA 4.5 @ 1.9mA 3.5 @ 250µA 6.5 @ 600µA 3.7 @ 1mA
Qg Max (nC) 29 @ 10V 34 @ 10V 35 @ 10V 82 @ 10V 27 @ 10V 48 @ 10V
Power Dissipation Max (W) 30 32 35 39 61 45
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-220-3 TO-220F TO-220F-3 TO-220F-3 TO-220FM TO-220SIS
Product Status Active Not For New Designs Obsolete Not For New Designs Active Active
RoHS Compliance ROHS3 ROHS3 Not specified ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

Primary Substitutes (Active Status):

AOTF190A60L and TK20A60W,S5VX are the preferred substitutes for new designs. Both devices are in active production and offer improved or equivalent electrical performance compared to the STF24N60DM2. The AOTF190A60L provides 20A continuous drain current with 190 mOhm on-resistance, while the TK20A60W,S5VX delivers superior on-resistance performance at 155 mOhm. Both maintain full compatibility with the 600 V voltage rating and TO-220 package family.

Secondary Substitutes (Not For New Designs):

FCPF190N60E and AOTF190A60L are classified as "Not For New Designs" by their respective manufacturers. These parts remain functionally compatible but should be used only for legacy system maintenance or when supply constraints require their use. FCPF190N60E offers the highest power dissipation rating at 39W and higher current capability at 20.6A.

Obsolete Substitute (Not Recommended):

FCPF165N65S3L1 is marked as obsolete and should not be selected for new applications. This part is included for reference only in legacy system documentation.

Limited Current Rating:

R6018VNXC7G operates at only 10A continuous drain current, below the STF24N60DM2 specification of 18A. This device is suitable only for applications with reduced current requirements and should not be used as a direct replacement in designs requiring the full 18A rating.

Compliance Considerations:

All active and "Not For New Designs" substitutes maintain ROHS3 compliance and operate across the full -55°C to 150°C temperature range. Selection should prioritize parts with active product status for long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can I use FCPF190N60E as a direct replacement for STF24N60DM2?

A: FCPF190N60E is electrically compatible and meets all mandatory voltage, current, and temperature specifications. However, it is classified as "Not For New Designs" by onsemi. It may be used for legacy system repairs or when supply constraints require its use, but active alternatives such as AOTF190A60L or TK20A60W,S5VX are preferred for new designs.

Q: What is the difference between TO-220F and TO-220-3 packages?

A: Both are TO-220 family variants with identical pin configurations and mounting footprints. TO-220F and TO-220F-3 designations indicate manufacturer-specific package variants. All listed substitutes are mechanically compatible with the STF24N60DM2 TO-220-3 footprint.

Q: Why is R6018VNXC7G listed as a substitute if it only supports 10A?

A: R6018VNXC7G is included because it meets the mandatory voltage and temperature specifications. However, its 10A current rating is below the STF24N60DM2 specification of 18A. This device is suitable only for applications with reduced current requirements and should not be used in designs requiring the full 18A rating.

Q: Is FCPF165N65S3L1 suitable for new designs?

A: No. FCPF165N65S3L1 is marked as obsolete and should not be selected for new applications. It is included in this reference for legacy system documentation only.

Q: Which substitute offers the best on-resistance performance?

A: TK20A60W,S5VX provides the lowest on-resistance at 155 mOhm, compared to the STF24N60DM2 at 200 mOhm. This represents improved switching efficiency and reduced power dissipation in the on-state.

Q: Are all substitutes RoHS3 compliant?

A: All active and "Not For New Designs" substitutes are RoHS3 compliant. FCPF165N65S3L1 compliance status is not specified in the available data.

Q: Can I use a substitute with higher Vdss rating?

A: Yes. FCPF165N65S3L1 operates at 650 V, which exceeds the STF24N60DM2 specification of 600 V. Higher voltage ratings provide additional design margin and are electrically compatible with 600 V applications.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) affects switching speed and driver power requirements. Lower Qg values reduce switching losses and driver current demands. TK20A60W,S5VX at 48 nC and R6018VNXC7G at 27 nC represent the range among substitutes, compared to STF24N60DM2 at 29 nC.

Q: Should I prioritize active status or electrical performance when selecting a substitute?

A: Prioritize active product status for long-term supply assurance and manufacturer support. Among active alternatives, select based on electrical performance requirements such as on-resistance, gate charge, and power dissipation margin for your specific application.

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