STF18N60M2 N-Channel 600V MOSFET Equivalent & Substitute Parts

Part Overview

The STF18N60M2 is an N-channel 600V MOSFET manufactured by STMicroelectronics, part of the MDmesh™ II Plus series. This device is rated for 13A continuous drain current at 25°C with a maximum power dissipation of 25W and features a typical on-resistance of 0.255 Ohm. The component is housed in a TO-220FP through-hole package and maintains active product status with full RoHS3 compliance.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain disruptions, or when application parameters permit operation with devices offering comparable or enhanced electrical characteristics within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	13	A
On-Resistance (Rds On Max) @ 6.5A, 10V	280	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	21.5	nC
Power Dissipation (Max)	25	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220FP	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the STF18N60M2 are classified into two categories based on parametric alignment:

Parametric Equivalent: Parts that maintain identical or near-identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), gate charge, and power dissipation. These parts are direct functional replacements with no circuit redesign required.

Similar Substitutes: Parts that share the same Vdss rating (600V or higher) and comparable current handling capability (13A or greater) but may exhibit variations in secondary parameters such as gate charge, input capacitance, or power dissipation. These parts are suitable for applications where the primary voltage and current requirements are met, and the application design accommodates minor parameter variations.

Critical Substitution Parameters:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 13A minimum
On-Resistance (Rds On): 280mOhm or lower
Gate Threshold Voltage (Vgs(th)): 3.5V to 6V range
Package Type: TO-220 family (TO-220FP, TO-220F, TO-220FM acceptable)
Mounting: Through Hole
Operating Temperature: -55°C to 150°C minimum

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
STF18N60M2	STMicroelectronics	600	13	280	4	21.5	25	TO-220FP	Active
STFH18N60M2	STMicroelectronics	600	13	280	4	21.5	25	TO-220FP	Active
AOTF15S60L	Alpha & Omega Semiconductor	600	15	290	3.8	15.6	27.8	TO-220F	Active
AOTF15S65L	Alpha & Omega Semiconductor	650	15	290	4	17.2	34	TO-220F	Active
IPAW60R280CEXKSA1	Infineon Technologies	600	19.3	280	3.5	43	32	PG-TO220	Obsolete
PJMF280N60E1_T0_00001	Panjit International	600	13.8	280	4	27	34	ITO-220AB-F	Active
PJMF280N65E1_T0_00001	Panjit International	650	13.8	280	4	30	35.7	ITO-220AB-F	Active
R6014YNXC7G	Rohm Semiconductor	600	9	260	6	20	54	TO-220FM	Active
R6020FNX	Rohm Semiconductor	600	20	250	5	65	50	TO-220FM	Active
SIHF15N60E-GE3	Vishay Siliconix	600	15	280	4	78	34	TO-220	Active
SPA15N60C3XKSA1	Infineon Technologies	650	15	280	3.9	63	34	PG-TO220-3-31	Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

The STFH18N60M2 from STMicroelectronics is a parametric equivalent to the STF18N60M2, offering identical electrical specifications and the same TO-220FP package. Both devices maintain active product status and full RoHS3 compliance. This part is the primary equivalent choice when direct replacement is required without circuit modification.

Active Substitute Selection for 600V, 13A+ Applications:

The AOTF15S60L (Alpha & Omega Semiconductor) provides a 600V, 15A rated device with comparable on-resistance (290mOhm) and operates within the same temperature range. This device is suitable for applications where the additional 2A current margin is beneficial. The part maintains active status and RoHS3 compliance.

The PJMF280N60E1_T0_00001 (Panjit International) offers 600V, 13.8A operation with identical on-resistance (280mOhm) and is rated for higher power dissipation (34W). This device features an isolated tab package variant (ITO-220AB-F) and is suitable for applications requiring enhanced thermal isolation.

The SIHF15N60E-GE3 (Vishay Siliconix) provides 600V, 15A capability with matching on-resistance (280mOhm) and gate threshold voltage (4V). This device is suitable for direct substitution in applications tolerating higher gate charge (78nC).

Higher Voltage Alternatives:

The AOTF15S65L and PJMF280N65E1_T0_00001 both offer 650V ratings with comparable current and on-resistance specifications. These devices are suitable for applications where increased voltage margin is required or where supply chain availability favors higher voltage variants.

The SPA15N60C3XKSA1 (Infineon CoolMOS™) provides 650V, 15A operation with 280mOhm on-resistance and is suitable for applications requiring the CoolMOS™ technology platform.

Devices Not Recommended for Direct Substitution:

The IPAW60R280CEXKSA1 (Infineon) carries obsolete product status and should not be selected for new designs or long-term production applications.

The R6014YNXC7G (Rohm) is rated for only 9A continuous current, below the 13A requirement of the STF18N60M2, and is unsuitable for equivalent substitution.

The R6020FNX (Rohm) is rated for 20A continuous current with significantly higher gate charge (65nC) and power dissipation (50W), making it suitable only for applications where these enhanced specifications are required.

Frequently Asked Questions (FAQ)

Q: Can the STFH18N60M2 be used as a direct replacement for the STF18N60M2?

A: Yes. The STFH18N60M2 is a parametric equivalent with identical Vdss (600V), Id (13A), Rds On (280mOhm), Vgs(th) (4V), and gate charge (21.5nC) specifications. Both devices use the TO-220FP package and maintain active product status with RoHS3 compliance. No circuit modification is required.

Q: What is the minimum continuous drain current required for a substitute part?

A: The minimum continuous drain current for a suitable substitute is 13A at 25°C, matching the STF18N60M2 specification. Parts rated below 13A (such as the R6014YNXC7G at 9A) are not suitable for equivalent substitution.

Q: Are TO-220F and TO-220FM packages compatible with the TO-220FP package?

A: TO-220F, TO-220FM, and TO-220FP are all variants of the TO-220 through-hole package family with identical pin configurations and mechanical mounting. These packages are mechanically and electrically interchangeable in standard PCB layouts. However, verify specific thermal and creepage requirements for your application, as some variants include isolated tabs or wide creepage features.

Q: Can I use a 650V rated device in place of the 600V STF18N60M2?

A: Yes. A 650V rated device (such as AOTF15S65L or PJMF280N65E1_T0_00001) provides additional voltage margin and is suitable for applications designed for 600V operation. The higher voltage rating does not degrade performance in 600V applications. Verify that gate drive voltage and other circuit parameters remain compatible.

Q: What does "parametric equivalent" mean in this context?

A: A parametric equivalent part maintains identical or near-identical values across all critical electrical specifications: Vdss, Id, Rds On, Vgs(th), gate charge, power dissipation, and operating temperature range. Parametric equivalents are direct functional replacements requiring no circuit redesign.

Q: Why is the IPAW60R280CEXKSA1 listed but not recommended?

A: The IPAW60R280CEXKSA1 carries obsolete product status, indicating that the manufacturer has discontinued production and support. New designs and production applications should not rely on obsolete components due to unavailability and lack of ongoing technical support.

Q: How does gate charge (Qg) affect device selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. The STF18N60M2 specifies 21.5nC at 10V. Substitute parts with higher gate charge (such as SIHF15N60E-GE3 at 78nC) require more gate drive energy and may increase switching losses. Substitute parts with lower gate charge (such as AOTF15S60L at 15.6nC) reduce gate drive requirements. Select substitutes based on your gate driver capability and switching frequency requirements.

Q: What is the significance of on-resistance (Rds On) in MOSFET substitution?

A: On-resistance directly affects conduction losses and heat generation. The STF18N60M2 specifies 280mOhm maximum at 6.5A and 10V gate drive. Substitute parts with equal or lower on-resistance (such as R6020FNX at 250mOhm) reduce power dissipation. Parts with slightly higher on-resistance (such as AOTF15S60L at 290mOhm) increase losses marginally. Select based on thermal budget and efficiency requirements.

Q: Are all listed substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed in this reference maintain RoHS3 compliance. The obsolete IPAW60R280CEXKSA1 also carries RoHS3 compliance but should not be selected due to discontinued status.

Q: What package variant is the ITO-220AB-F used by Panjit devices?

A: The ITO-220AB-F is a TO-220 package variant with an isolated tab feature. This variant provides electrical isolation between the tab and the drain connection, useful in applications requiring galvanic isolation or where multiple devices share a common heat sink without electrical connection. Standard TO-220FP packages do not include this isolation feature.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message