STF18N60DM2 Equivalent & Substitute Parts

Part Overview

The STF18N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 13A continuous drain current at 25°C. This device operates in the MDmesh™ DM2 series and is housed in a TO-220FP through-hole package. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible mechanical packaging and thermal characteristics. Alternative models may be required due to inventory availability, supply chain considerations, or design optimization for specific application requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	13	A
Rds On (Max) @ 6A, 10V	295	mOhm
Gate Charge (Qg) @ 10V	20	nC
Power Dissipation (Max)	25	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3 Full Pack	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the STF18N60DM2 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss rating of 600V to ensure safe operation within the same voltage class. Parts rated above 600V (such as 650V devices) are acceptable as they provide additional voltage margin.

Current Rating: Substitute parts must support a continuous drain current (Id) sufficient for the application. The STF18N60DM2 provides 13A; substitute parts with lower current ratings (9A, 10.6A, 8A) represent reduced current capacity and require application-level verification.

Package Compatibility: All identified substitutes utilize TO-220-3 Full Pack configuration with through-hole mounting, ensuring mechanical and thermal interface compatibility with existing PCB designs.

On-State Resistance (Rds On): The STF18N60DM2 specifies 295mOhm maximum at 6A and 10V gate voltage. Substitute parts with higher Rds On values (360mOhm, 380mOhm, 300mOhm) result in increased conduction losses and heat dissipation.

Gate Charge (Qg): The STF18N60DM2 specifies 20nC maximum at 10V. Substitute parts with higher gate charge values require increased driver capability and switching energy.

Power Dissipation: The STF18N60DM2 is rated for 25W maximum. Substitute parts with higher power ratings (22W, 31W, 54W) indicate different thermal performance characteristics.

Temperature Range: The STF18N60DM2 operates from -55°C to 150°C. Substitute parts must support this range or a compatible subset.

Parameter Comparison

Parameter	STF18N60DM2	IPA60R360P7SXKSA1	IPA65R380E6XKSA1	R6013VNXC7G
Manufacturer	STMicroelectronics	Infineon Technologies	Infineon Technologies	Rohm Semiconductor
Vdss (V)	600	600	650	600
Id @ 25°C (A)	13	9	10.6	8
Rds On (Max) (mOhm)	295 @ 6A, 10V	360 @ 2.7A, 10V	380 @ 3.2A, 10V	300 @ 3A, 15V
Gate Charge (Qg) (nC)	20 @ 10V	13 @ 10V	39 @ 10V	21 @ 10V
Power Dissipation (Max) (W)	25	22	31	54
Operating Temperature (°C)	-55 to 150	-40 to 150	-55 to 150	to 150
Package	TO-220FP	PG-TO220-FP	PG-TO220-FP	TO-220FM
Product Status	Active	Active	Not For New Designs	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IPA60R360P7SXKSA1 (Infineon CoolMOS™ P7)

This substitute is suitable for applications where reduced gate charge and lower power dissipation are beneficial. The 9A current rating represents a 30.8% reduction from the STF18N60DM2. The part maintains 600V voltage rating and Active product status. The operating temperature minimum of -40°C is 15°C higher than the main part, which may be limiting in extreme cold environments. RoHS3 compliance and EAR99 classification are maintained.

IPA65R380E6XKSA1 (Infineon CoolMOS™)

This substitute provides a 650V voltage rating, offering 50V additional margin above the 600V requirement. The 10.6A current rating represents a 18.5% reduction from the STF18N60DM2. However, this part carries a "Not For New Designs" product status, indicating it is in end-of-life phase. The higher gate charge (39nC) and power dissipation (31W) require consideration in thermal and driver design. The operating temperature range of -55°C to 150°C matches the main part. This substitute is not recommended for new design implementations.

R6013VNXC7G (Rohm Semiconductor PRESTOMOS)

This substitute provides the lowest current rating at 8A, representing a 38.5% reduction from the STF18N60DM2. The 600V voltage rating is equivalent. The Rds On specification of 300mOhm at 3A and 15V gate voltage differs from the main part's 10V specification. The highest power dissipation rating of 54W indicates enhanced thermal capability. The part maintains Active product status, RoHS3 compliance, and full -55°C to 150°C operating range. The maximum gate voltage rating of ±30V exceeds the main part's ±25V specification.

Recommendation Summary

For direct substitution with minimal design impact, the IPA60R360P7SXKSA1 is preferred due to Active product status and maintained voltage rating, with the understanding that application current requirements must not exceed 9A. The R6013VNXC7G is suitable where higher power dissipation capability is required and current demands do not exceed 8A. The IPA65R380E6XKSA1 should not be selected for new designs due to end-of-life status.

Frequently Asked Questions (FAQ)

Q: Can the IPA60R360P7SXKSA1 directly replace the STF18N60DM2 in all applications?

A: The IPA60R360P7SXKSA1 maintains the same 600V voltage rating and TO-220 package compatibility. However, the continuous drain current is reduced from 13A to 9A. Direct substitution is valid only if the application current requirement does not exceed 9A at 25°C. Gate charge is lower (13nC vs. 20nC), which may improve switching performance in some circuits.

Q: Why is the IPA65R380E6XKSA1 marked "Not For New Designs"?

A: This designation indicates the part is in end-of-life phase and the manufacturer is not recommending it for new product development. While the part remains available in inventory (1120 pcs), it should only be used for legacy system maintenance or repair applications where no alternative exists.

Q: What is the significance of the different Rds On measurement conditions across substitute parts?

A: Rds On values are measured at different drain current and gate voltage conditions. The STF18N60DM2 specifies 295mOhm at 6A and 10V, while the R6013VNXC7G specifies 300mOhm at 3A and 15V. These differences reflect different device characteristics and operating points. Direct numerical comparison requires normalization to identical test conditions, which is not provided in the datasheets.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The STF18N60DM2, IPA60R360P7SXKSA1, IPA65R380E6XKSA1, and R6013VNXC7G all carry RoHS3 compliance certification. All parts are also REACH Unaffected and classified as EAR99 for export control purposes.

Q: What is the impact of lower gate charge in the IPA60R360P7SXKSA1?

A: Lower gate charge (13nC vs. 20nC) reduces the energy required to switch the device on and off. This typically results in faster switching transitions, reduced switching losses, and lower driver power consumption. The gate driver circuit must still be capable of supplying the required gate voltage and current for reliable operation.

Q: Can the R6013VNXC7G operate at the same temperature extremes as the STF18N60DM2?

A: The R6013VNXC7G operating temperature specification lists only the upper limit of 150°C without a defined lower limit in the provided data. The STF18N60DM2 specifies -55°C to 150°C. For applications requiring operation below 0°C, the STF18N60DM2 or IPA65R380E6XKSA1 (both rated to -55°C) are more appropriate.

Q: How does the higher power dissipation rating of the R6013VNXC7G affect thermal design?

A: The R6013VNXC7G is rated for 54W maximum power dissipation compared to 25W for the STF18N60DM2. This indicates the device can handle higher continuous power levels before reaching thermal limits. However, actual power dissipation in an application depends on conduction losses (Rds On × I²) and switching losses, not the device rating alone. The higher rating provides additional thermal margin in high-power applications.

Q: Are the TO-220FP, PG-TO220-FP, and TO-220FM packages mechanically interchangeable?

A: All three package variants are TO-220-3 Full Pack configurations with through-hole mounting. They are mechanically compatible with standard TO-220 PCB footprints and heatsink mounting hardware. Minor dimensional variations between manufacturers (FP, FM designations) do not affect functional interchangeability in standard applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message