STF16N50U Equivalent & Substitute Parts

Part Overview

The STF16N50U is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 15A continuous drain current at 25°C. This device is packaged in a TO-220FP through-hole configuration and is part of the UltraFASTmesh™ series. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	15	A (Tc)
Rds On (Max) @ Id, Vgs	520	mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs	40	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1950	pF @ 25V
Power Dissipation (Max)	30	W (Tc)
Operating Temperature (TJ)	150	°C
Package Type	TO-220-3 Full Pack	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the STF16N50U is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 15A at 25°C
Gate-Source Voltage (Vgs): Must accommodate ±30V maximum rating
On-State Resistance (Rds On): Must not significantly exceed 520mOhm at rated conditions
Power Dissipation: Must support minimum 30W thermal capability

Mechanical Compatibility Requirements:

Mounting Type: Through Hole only
Package Case: TO-220-3 Full Pack configuration
Pin configuration: Standard TO-220 three-pin layout

Compliance Requirements:

RoHS3 compliance required for new designs
REACH unaffected status preferred

Substitute parts are grouped into two categories: direct equivalents (matching all critical parameters within tolerance) and similar alternatives (meeting electrical requirements with acceptable trade-offs in secondary parameters).

Parameter Comparison

Parameter	STF16N50U (Main)	STF23NM50N	FDPF16N50UT	FDPF12N50NZ	R5011FNX	IPA50R520CPXKSA1
Manufacturer	STMicroelectronics	STMicroelectronics	Fairchild Semiconductor	Fairchild Semiconductor	Rohm Semiconductor	Infineon Technologies
Vdss (V)	500	500	500	500	500	500
Id @ 25°C (A)	15	17	15	11.5	11 (Ta) / 5.4 (Tc)	7.1
Rds On (Max) (mOhm)	520 @ 5A, 10V	190 @ 8.5A, 10V	480 @ 7.5A, 10V	520 @ 5.75A, 10V	520 @ 5.5A, 10V	520 @ 3.8A, 10V
Gate Charge Qg (nC)	40 @ 10V	45 @ 10V	45 @ 10V	30 @ 10V	30 @ 10V	17 @ 10V
Ciss (pF)	1950 @ 25V	1330 @ 50V	1945 @ 25V	1235 @ 25V	950 @ 25V	680 @ 100V
Power Dissipation (W)	30	30	38.5	42	50	66
Operating Temp (°C)	150	150	-55 to 150	-55 to 150	150	-40 to 150
Package	TO-220FP	TO-220FP	TO-220F-3	TO-220F-3	TO-220FM	PG-TO220-3-31
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

Primary Recommendation: STF23NM50N

The STF23NM50N is the preferred direct substitute for the STF16N50U. Both devices are manufactured by STMicroelectronics and share identical voltage ratings (500V Vdss) and package configuration (TO-220FP). The STF23NM50N provides superior performance with 17A continuous drain current versus 15A, improved on-state resistance (190mOhm versus 520mOhm), and maintains the same 30W power dissipation rating. The device is currently in active production status and carries ROHS3 compliance certification, making it suitable for new designs and long-term procurement.

Secondary Recommendation: FDPF16N50UT

The FDPF16N50UT from Fairchild Semiconductor provides an exact current rating match (15A) and identical voltage specification (500V). This device is in active production status with extended operating temperature range (-55°C to 150°C). The on-state resistance (480mOhm) is marginally lower than the STF16N50U, and power dissipation capability is higher at 38.5W. The TO-220F-3 package is mechanically compatible with TO-220FP applications. This option is suitable when STMicroelectronics sourcing is unavailable.

Alternative Option: FDPF12N50NZ

The FDPF12N50NZ is suitable for applications where current requirements can be reduced to 11.5A. This device offers improved power dissipation (42W) and lower gate charge (30nC), resulting in faster switching characteristics. The on-state resistance matches the STF16N50U specification (520mOhm). This part is in active production and provides extended temperature range operation.

Not Recommended: IPA50R520CPXKSA1

The IPA50R520CPXKSA1 from Infineon Technologies is classified as obsolete and provides only 7.1A continuous drain current, which is insufficient for applications requiring the full 15A rating of the STF16N50U. This part should not be selected for new designs.

Not Recommended: R5011FNX

The R5011FNX from Rohm Semiconductor is classified as "Not For New Designs" and provides only 5.4A continuous drain current at case temperature (Tc), which does not meet the 15A requirement. This part is unsuitable for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the STF23NM50N directly replace the STF16N50U in existing designs?

A: Yes. The STF23NM50N is a direct substitute with identical voltage rating (500V), superior current capability (17A versus 15A), and matching TO-220FP package configuration. The improved on-state resistance (190mOhm versus 520mOhm) provides better thermal performance. No circuit modifications are required.

Q: What is the difference between TO-220FP and TO-220F-3 packages?

A: Both are three-pin through-hole packages with identical pin spacing and mechanical footprint. The primary difference is in the lead frame material and plating specifications. Devices in either package can be used interchangeably in standard TO-220 PCB layouts.

Q: Why is the STF16N50U classified as obsolete?

A: The STF16N50U is part of the older UltraFASTmesh™ series. STMicroelectronics has transitioned to the newer MDmesh™ II technology platform, represented by the STF23NM50N, which offers improved performance characteristics and better long-term availability.

Q: Can I use the FDPF12N50NZ if my application only requires 11.5A?

A: Yes, if your application current requirement is 11.5A or less, the FDPF12N50NZ is a suitable substitute. This device offers higher power dissipation capability (42W) and lower gate charge (30nC), which may improve switching performance in your circuit.

Q: What are the thermal considerations when substituting these parts?

A: The STF23NM50N and FDPF16N50UT both maintain the 30W and 38.5W power dissipation ratings respectively, comparable to or exceeding the STF16N50U specification. Verify that your PCB thermal design and heatsinking remain adequate for the selected substitute. The improved on-state resistance of the STF23NM50N may reduce thermal load in your application.

Q: Are all substitute parts RoHS3 compliant?

A: The STF23NM50N and R5011FNX are explicitly RoHS3 compliant. Compliance status for FDPF16N50UT and FDPF12N50NZ is not specified in available documentation. Verify RoHS compliance requirements with your procurement department before final selection.

Q: Can I use the IPA50R520CPXKSA1 as a substitute?

A: No. The IPA50R520CPXKSA1 provides only 7.1A continuous drain current, which is insufficient for applications requiring the 15A rating of the STF16N50U. Additionally, this device is classified as obsolete. This part is not suitable for substitution.

Q: What is the impact of different gate charge specifications on circuit performance?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The STF23NM50N has slightly higher gate charge (45nC versus 40nC), requiring marginally more driver current. The FDPF12N50NZ and R5011FNX have lower gate charge (30nC), enabling faster switching. Verify that your gate driver circuit can supply the required charge for your selected substitute within the specified switching frequency.

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