STF13N65M2 Equivalent & Substitute Parts

Part Overview

The STF13N65M2 is an N-Channel 650 V MOSFET manufactured by STMicroelectronics, designed for through-hole applications in the TO-220FP package. This device operates at 10A continuous drain current with a maximum power dissipation of 25W and features the MDmesh™ M2 technology platform. The part is currently Active in product status and ROHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including drain-source voltage rating, continuous drain current, on-resistance characteristics, and package form factor. Alternative sources provide design flexibility, supply chain redundancy, and inventory availability options.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Current - Continuous Drain (Id) @ 25°C	10	A (Tc)
Rds On (Max) @ Id, Vgs	430	mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17	nC @ 10 V
Vgs (Max)	±25	V
Input Capacitance (Ciss) (Max) @ Vds	590	pF @ 100 V
Power Dissipation (Max)	25	W (Tc)
Operating Temperature	150	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-220-3 Full Pack	-
Supplier Device Package	TO-220FP	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts are classified into two categories based on parametric alignment with the STF13N65M2:

Parametric Equivalent: Parts that maintain identical or near-identical electrical specifications across all critical parameters including Vdss, Id, Rds On, gate charge, and capacitance characteristics. These parts support direct replacement with no circuit redesign required.

Similar Parts: Parts that operate within the same voltage and current class but exhibit variations in one or more secondary parameters such as on-resistance, gate charge, or input capacitance. These parts require application-level verification to confirm suitability.

The following parameters determine substitution eligibility:

Drain to Source Voltage (Vdss): Must equal or exceed 650 V
Continuous Drain Current (Id): Must support minimum 10 A at 25°C
On-Resistance (Rds On): Lower values preferred; higher values acceptable if thermal design accommodates increased dissipation
Gate Charge (Qg): Lower values reduce switching losses; higher values acceptable in low-frequency applications
Package Type: TO-220 family packages (TO-220FP, TO-220F, TO-220FM, ITO-220AB-F, TO-220SIS) support mechanical compatibility
Compliance: ROHS3 compliance required; REACH Unaffected status preferred

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Package	Status
STF13N65M2	STMicroelectronics	650	10	430 @ 5A, 10V	17 @ 10V	590 @ 100V	TO-220FP	Active
STFU13N65M2	STMicroelectronics	650	10	430 @ 5A, 10V	17 @ 10V	590 @ 100V	TO-220FP	Active
PJMF380N65E1_T0_00001	Panjit International Inc.	650	10.6	380 @ 3.2A, 10V	22 @ 10V	769 @ 400V	ITO-220AB-F	Active
PJMF390N65EC_T0_00001	Panjit International Inc.	650	10	390 @ 5A, 10V	19 @ 10V	726 @ 400V	ITO-220AB-F	Active
AOTF12N60L	Alpha & Omega Semiconductor Inc.	600	12	550 @ 6A, 10V	50 @ 10V	2100 @ 25V	TO-220F	Active
FCPF600N60Z	Fairchild Semiconductor	600	7.4	600 @ 3.7A, 10V	26 @ 10V	1120 @ 25V	TO-220F-3	Active
R6009ENX	Rohm Semiconductor	600	9	535 @ 2.8A, 10V	23 @ 10V	430 @ 25V	TO-220FM	Active
TK8A60W,S4VX	Toshiba Semiconductor and Storage	600	8	500 @ 4A, 10V	18.5 @ 10V	570 @ 300V	TO-220SIS	Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

STFU13N65M2 (STMicroelectronics) provides identical electrical and mechanical specifications to the STF13N65M2. This part maintains the same 650 V Vdss rating, 10 A continuous drain current, 430 mOhm on-resistance, and TO-220FP package configuration. Both parts carry Active product status and ROHS3 compliance. This part is suitable for direct substitution without circuit modification.

Similar Part Selection for 650 V Applications:

PJMF380N65E1_T0_00001 and PJMF390N65EC_T0_00001 (Panjit International Inc.) maintain the 650 V Vdss rating required for high-voltage applications. Both parts support continuous drain currents of 10 A or greater and feature on-resistance values within acceptable range (380 mOhm and 390 mOhm respectively). These parts use isolated tab TO-220 packages (ITO-220AB-F) and carry ROHS3 compliance and REACH Unaffected status. Gate charge values are slightly elevated (22 nC and 19 nC) compared to the main part, resulting in marginally higher switching losses in high-frequency applications.

Similar Part Selection for 600 V Applications:

AOTF12N60L (Alpha & Omega Semiconductor Inc.), FCPF600N60Z (Fairchild Semiconductor), R6009ENX (Rohm Semiconductor), and TK8A60W,S4VX (Toshiba Semiconductor and Storage) operate at 600 V Vdss, which is 50 V lower than the STF13N65M2. These parts are suitable for applications where the lower voltage rating does not compromise circuit performance margins. All four parts carry Active product status and ROHS3 compliance.

AOTF12N60L supports 12 A continuous drain current, exceeding the main part specification. However, on-resistance is elevated at 550 mOhm, and gate charge is significantly higher at 50 nC, resulting in increased switching losses and thermal dissipation.

FCPF600N60Z supports only 7.4 A continuous drain current, below the main part specification. This part is suitable only for applications with reduced current requirements.

R6009ENX supports 9 A continuous drain current, approaching the main part specification. On-resistance is 535 mOhm, and gate charge is 23 nC, both acceptable for moderate-frequency applications.

TK8A60W,S4VX supports 8 A continuous drain current. On-resistance is 500 mOhm, and gate charge is 18.5 nC, comparable to the main part. This part uses a TO-220SIS package variant.

All substitute parts listed carry appropriate regulatory compliance certifications for industrial and commercial applications.

Frequently Asked Questions (FAQ)

Q: Can STFU13N65M2 replace STF13N65M2 in all applications?

A: Yes. STFU13N65M2 is a parametric equivalent with identical Vdss (650 V), Id (10 A), Rds On (430 mOhm), gate charge (17 nC), and package configuration (TO-220FP). Direct substitution is supported without circuit redesign.

Q: What is the primary difference between the STF13N65M2 and the Panjit parts (PJMF380N65E1 and PJMF390N65EC)?

A: All three parts maintain 650 V Vdss and 10 A continuous drain current ratings. The Panjit parts feature lower on-resistance values (380 mOhm and 390 mOhm versus 430 mOhm) and use isolated tab packages (ITO-220AB-F). Gate charge is slightly higher in the Panjit parts (22 nC and 19 nC versus 17 nC). The isolated tab configuration provides additional electrical isolation between the drain and mounting surface.

Q: Why do the 600 V parts (AOTF12N60L, FCPF600N60Z, R6009ENX, TK8A60W,S4VX) have lower Vdss ratings than the STF13N65M2?

A: These parts are rated for 600 V maximum drain-source voltage, which is 50 V lower than the STF13N65M2 (650 V). The lower voltage rating reflects different semiconductor design and manufacturing processes. These parts are suitable only for applications where the circuit voltage does not exceed 600 V.

Q: Which substitute part has the lowest on-resistance?

A: PJMF380N65E1_T0_00001 features the lowest on-resistance at 380 mOhm (measured at 3.2 A, 10 V gate voltage). Lower on-resistance reduces conduction losses and heat dissipation during normal operation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification. STFU13N65M2, PJMF380N65E1_T0_00001, PJMF390N65EC_T0_00001, AOTF12N60L, R6009ENX, and TK8A60W,S4VX are all ROHS3 compliant. FCPF600N60Z compliance status is not specified in the provided data.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge values increase switching losses, particularly in high-frequency applications. The STF13N65M2 features 17 nC gate charge. PJMF380N65E1_T0_00001 has 22 nC, PJMF390N65EC_T0_00001 has 19 nC, and AOTF12N60L has 50 nC. Lower gate charge is preferred in switching power supplies and high-frequency converters.

Q: Can I use FCPF600N60Z as a substitute if my application requires 10 A continuous drain current?

A: No. FCPF600N60Z is rated for only 7.4 A continuous drain current at 25°C, which is below the 10 A requirement of the STF13N65M2. Using this part in a 10 A application would exceed its current rating and cause thermal stress and potential failure.

Q: What package variants are available among the substitute parts?

A: The STF13N65M2 uses TO-220FP package. STFU13N65M2 also uses TO-220FP. PJMF380N65E1_T0_00001 and PJMF390N65EC_T0_00001 use ITO-220AB-F (isolated tab variant). AOTF12N60L uses TO-220F. FCPF600N60Z uses TO-220F-3. R6009ENX uses TO-220FM. TK8A60W,S4VX uses TO-220SIS. All variants are through-hole mounted TO-220 family packages with compatible pin configurations.

Q: Which substitute part has the highest power dissipation rating?

A: FCPF600N60Z features the highest power dissipation rating at 89 W (Tc), compared to 25 W for the STF13N65M2. However, FCPF600N60Z supports only 7.4 A continuous drain current, making it unsuitable for direct replacement in 10 A applications.

Q: Are there REACH compliance differences between substitute parts?

A: STFU13N65M2, PJMF380N65E1_T0_00001, PJMF390N65EC_T0_00001, R6009ENX, and TK8A60W,S4VX all carry REACH Unaffected status. AOTF12N60L carries REACH Unaffected status. FCPF600N60Z compliance status is not specified in the provided data.

Q: What is the operating temperature range for each part?

A: STF13N65M2 and R6009ENX are rated to 150°C (TJ) maximum. STFU13N65M2 is rated to 150°C (TJ). PJMF380N65E1_T0_00001 and PJMF390N65EC_T0_00001 are rated -55°C to 150°C (TJ). AOTF12N60L is rated -55°C to 150°C (TJ). FCPF600N60Z is rated -55°C to 150°C (TJ). TK8A60W,S4VX is rated to 150°C (TJ). All parts support industrial temperature ranges.

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