STF120NF10 Equivalent & Substitute Parts

Part Overview

The STF120NF10 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 41A continuous drain current at 25°C. This device is packaged in a TO-220-3 Full Pack (TO-220FP) through-hole configuration and is part of the STripFET™ II series. The STF120NF10 is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

STF120NF10

STMicroelectronicsIn Stock: 1684STF120NF10 Datasheet

Current PartRFQ

IPA083N10N5XKSA1

Infineon TechnologiesIn Stock: 200351IPA083N10N5XKSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STF120NF10 are identified based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 100V minimum
• FET Type: N-Channel MOSFET
• Package Type: TO-220-3 Full Pack (through-hole mounting)
• Operating Temperature Range: -55°C to 175°C (TJ)
• Continuous Drain Current (Id): Equal to or greater than 41A at 25°C

Performance Parameters (must not degrade system operation):

• On-State Drain Resistance (Rds On): Lower or equal values improve performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values reduce gate drive requirements

The IPA083N10N5XKSA1 meets all critical matching parameters and demonstrates improved electrical characteristics in gate charge and input capacitance, making it a direct functional equivalent.

Parameter Comparison

Engineering Selection Recommendations

STF120NF10 (Obsolete)

The STF120NF10 is classified as obsolete and no longer in active production. While 1,671 pieces remain in stock, this part number should not be selected for new designs or long-term production commitments. Existing applications using this device require transition planning to an active equivalent.

IPA083N10N5XKSA1 (Active Substitute)

The IPA083N10N5XKSA1 is an active product from Infineon Technologies and is the recommended substitute for the STF120NF10. This device meets all critical electrical and mechanical requirements:

• Identical 100V Vdss rating and TO-220-3 Full Pack package
• Exceeds minimum continuous drain current requirement (44A vs. 41A)
• Superior on-state resistance (8.3 mOhm vs. 10.5 mOhm)
• Significantly lower gate charge (37 nC vs. 233 nC), reducing switching losses
• Lower input capacitance (2,730 pF vs. 5,200 pF), simplifying gate drive design
• Full compliance with ROHS3 and REACH regulations
• Unlimited moisture sensitivity level (MSL 1)
• Extensive inventory availability (200,300 pieces in stock)

Both devices operate across the identical temperature range (-55°C to 175°C) and share equivalent regulatory compliance status. The IPA083N10N5XKSA1 provides improved electrical performance characteristics suitable for direct replacement in existing circuit designs.

Frequently Asked Questions (FAQ)

Q: Can the IPA083N10N5XKSA1 directly replace the STF120NF10 in existing PCB layouts?

A: Yes. Both devices use the TO-220-3 Full Pack package with identical pin configuration and mechanical dimensions. No PCB modifications are required for physical installation.

Q: What are the key electrical differences between these two devices?

A: The IPA083N10N5XKSA1 provides lower on-state resistance (8.3 mOhm vs. 10.5 mOhm), significantly lower gate charge (37 nC vs. 233 nC), and lower input capacitance (2,730 pF vs. 5,200 pF). These improvements reduce power dissipation and simplify gate drive circuit design. Both devices maintain the same 100V Vdss rating and support the same operating temperature range.

Q: Why is gate charge reduction important in this substitution?

A: Lower gate charge reduces the energy required to switch the transistor on and off, decreasing switching losses and heat generation. The IPA083N10N5XKSA1's gate charge of 37 nC compared to the STF120NF10's 233 nC represents a significant reduction in gate drive requirements, improving overall circuit efficiency.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both the STF120NF10 and IPA083N10N5XKSA1 are ROHS3 compliant, REACH unaffected, and carry EAR99 ECCN classification. Both devices have unlimited moisture sensitivity level (MSL 1), eliminating special handling requirements.

Q: What is the continuous drain current difference, and does it affect substitution?

A: The IPA083N10N5XKSA1 is rated for 44A continuous drain current at 25°C, compared to the STF120NF10's 41A. This 3A increase provides additional current headroom and does not create any compatibility issues. Applications designed for 41A operation remain fully supported.

Q: Is the IPA083N10N5XKSA1 suitable for new design applications?

A: Yes. The IPA083N10N5XKSA1 is an active product with extensive inventory availability (200,300 pieces in stock). It is the appropriate choice for new designs requiring 100V, 40+ ampere N-Channel MOSFET functionality in TO-220-3 Full Pack packaging.

Q: How do the gate threshold voltages compare?

A: The IPA083N10N5XKSA1 has a gate threshold voltage of 3.8V at 49µA, compared to the STF120NF10's 4V at 250µA. Both values fall within typical MOSFET operating ranges and do not create compatibility issues. Gate drive circuits designed for the STF120NF10 operate correctly with the IPA083N10N5XKSA1.