STF11N65M2 Equivalent & Substitute Parts

Part Overview

The STF11N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 7A continuous drain current at 25°C. This device operates in the Through Hole TO-220FP package and is part of the MDmesh™ II Plus series. The component is currently Active in product status with 19,059 pieces available in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter tolerances for this MOSFET category, while maintaining compatibility with the same mounting type and package family.

Substiute Parts

STF11N65M2

STMicroelectronicsIn Stock: 19089STF11N65M2 Datasheet

Current PartRFQ

FDPF12N60NZ

onsemiIn Stock: 15542FDPF12N60NZ Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs in the TO-220 package family is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must meet or exceed the drain-to-source voltage (Vdss) requirement of the main part. The STF11N65M2 operates at 650V; substitute parts rated at 600V or higher are within acceptable tolerance for this application category.

Current Capacity: The substitute part must support the continuous drain current (Id) requirement. The STF11N65M2 requires 7A; substitute parts rated at 7A or higher satisfy this criterion.

On-State Resistance (Rds On): The substitute part's maximum on-state resistance must not exceed the main part's specification to ensure equivalent power dissipation characteristics. The STF11N65M2 specifies 670mOhm maximum; substitute parts with comparable or lower Rds On values maintain thermal performance.

Gate Charge (Qg): Lower gate charge values indicate faster switching performance. The STF11N65M2 specifies 12.5nC maximum; substitute parts with higher gate charge values may impact switching speed but remain functionally compatible.

Mounting and Package: Both parts must use Through Hole mounting with TO-220-3 Full Pack configuration to ensure mechanical and electrical compatibility.

Compliance and Status: Both parts must maintain Active product status and ROHS3 compliance to ensure long-term availability and regulatory conformance.

Parameter Comparison

Engineering Selection Recommendations

Primary Part (STF11N65M2): This component is the specified selection when the application requires the exact voltage rating of 650V and the lower gate charge specification of 12.5nC. The STMicroelectronics MDmesh™ II Plus series provides optimized performance for this voltage class. Active product status and ROHS3 compliance ensure regulatory conformance and supply continuity.

Substitute Part (FDPF12N60NZ): This onsemi UniFET-II™ component is suitable for applications where the 600V voltage rating is acceptable and higher current capacity (12A versus 7A) provides design margin. The higher gate charge (34nC) results in slower switching characteristics compared to the main part. Active product status and ROHS3 compliance are maintained. This substitute is appropriate when the application voltage does not exceed 600V and the additional current capacity and power dissipation rating (39W versus 25W) provide system-level advantages.

Both parts maintain identical operating temperature ranges (-55°C to 150°C) and Through Hole TO-220-3 package compatibility, ensuring mechanical interchangeability in PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the FDPF12N60NZ replace the STF11N65M2 in all applications?

A: The FDPF12N60NZ is suitable for applications where the maximum system voltage does not exceed 600V. If the application requires the full 650V rating of the STF11N65M2, the substitute is not appropriate. The substitute provides higher current capacity (12A versus 7A) and greater power dissipation capability (39W versus 25W), making it suitable for higher-power variants of the same circuit topology.

Q: What is the impact of the higher gate charge in the FDPF12N60NZ?

A: The FDPF12N60NZ specifies 34nC gate charge compared to 12.5nC for the STF11N65M2. Higher gate charge increases the time required to switch the transistor on and off, resulting in slower switching speed. This affects applications with high-frequency switching requirements. For low-frequency or DC applications, this difference has minimal impact.

Q: Are both parts mechanically compatible in the same PCB footprint?

A: Yes. Both the STF11N65M2 and FDPF12N60NZ use the Through Hole TO-220-3 Full Pack configuration. They are mechanically interchangeable in standard TO-220 PCB layouts without modification to the board design.

Q: What is the difference in on-state resistance between these parts?

A: The STF11N65M2 specifies 670mOhm maximum at 3.5A and 10V gate-source voltage. The FDPF12N60NZ specifies 650mOhm maximum at 6A and 10V gate-source voltage. The FDPF12N60NZ exhibits slightly lower on-state resistance, resulting in lower conduction losses at equivalent current levels.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the STF11N65M2 and FDPF12N60NZ are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What is the primary reason to select the substitute part over the main part?

A: The FDPF12N60NZ is selected when the application requires higher current capacity, greater power dissipation capability, or when 600V voltage rating is sufficient for the system design. The main part (STF11N65M2) is selected when the full 650V rating and lower gate charge (faster switching) are required.