STF11N65K3 Equivalent & Substitute Parts

Part Overview

The STF11N65K3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in a TO-220FP through-hole configuration and is part of the SuperMESH3™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available packaging and supplier options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	11	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	850 mOhm @ 3.6A, 10V	—
Power Dissipation (Max)	35	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STF11N65K3 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel topology required
Drain to Source Voltage (Vdss): Minimum 650V to maintain voltage rating compatibility
Continuous Drain Current (Id): Minimum 5.1A to support circuit operation (note: substitute parts may have lower current ratings depending on application requirements)
Drive Voltage: 10V gate drive compatibility
Mounting Type: Through Hole configuration
Package: TO-220 family variants (TO-220FP, TO-220-3, TO-220FM)
Operating Temperature: -55°C to 150°C range
Compliance: ROHS3 Compliant, REACH Unaffected

Secondary Compatibility Factors:

Rds On (Max): Electrical performance parameter affecting conduction losses
Gate Charge (Qg): Switching characteristics parameter
Input Capacitance (Ciss): Gate drive circuit design consideration
Power Dissipation (Max): Thermal management requirement

The identified substitute parts (IRFIB5N65APBF and R6007ENX) meet the primary substitution criteria with documented trade-offs in current rating and voltage rating respectively, as detailed in the parameter comparison table.

Parameter Comparison

Parameter	STF11N65K3 (Main)	IRFIB5N65APBF (Substitute)	R6007ENX (Substitute)
Manufacturer	STMicroelectronics	Vishay Siliconix	Rohm Semiconductor
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	650 V	650 V	600 V
Continuous Drain Current (Id) @ 25°C	11 A	5.1 A	7 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	850 mOhm @ 3.6A, 10V	930 mOhm @ 3.1A, 10V	620 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	4.5 V @ 100µA	4 V @ 250µA	4 V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V	48 nC @ 10 V	20 nC @ 10 V
Vgs (Max)	±30 V	±30 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 50 V	1417 pF @ 25 V	390 pF @ 25 V
Power Dissipation (Max)	35 W	60 W	40 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFIB5N65APBF (Vishay Siliconix): This substitute maintains the 650V voltage rating and 10V drive voltage specification of the STF11N65K3. The part is currently in active production status, ensuring long-term availability and supply chain stability. ROHS3 compliance and REACH unaffected status align with the original part's regulatory requirements. The primary trade-off is reduced continuous drain current (5.1A versus 11A), which requires circuit-level evaluation to confirm suitability for the intended application. The isolated tab variant of the TO-220-3 package provides thermal management flexibility. Gate charge specification (48 nC) is marginally higher than the original part, with minimal impact on gate drive circuit design.

R6007ENX (Rohm Semiconductor): This substitute is suitable for applications where the 650V voltage rating is not critical and 600V operation is acceptable. The part offers improved on-resistance characteristics (620 mOhm versus 850 mOhm) and significantly lower gate charge (20 nC versus 42 nC), resulting in reduced switching losses and simplified gate drive requirements. Continuous drain current rating (7A) falls between the original part and the Vishay alternative. The part is in active production with ROHS3 compliance. The maximum gate voltage specification (±20V versus ±30V) represents a minor constraint in gate drive circuit design. Input capacitance is substantially lower (390 pF), reducing gate drive power requirements.

Both substitute parts maintain through-hole mounting compatibility and operating temperature range alignment with the original STF11N65K3. Selection between substitutes depends on application-specific requirements for voltage rating, current capacity, and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IRFIB5N65APBF directly replace the STF11N65K3 in all applications?

A: The IRFIB5N65APBF maintains voltage rating and drive voltage compatibility but has reduced continuous drain current (5.1A versus 11A). Direct replacement is possible only in applications where the circuit current requirement does not exceed 5.1A at 25°C. Circuit-level thermal and electrical analysis is required to confirm suitability.

Q: What is the primary limitation of the R6007ENX as a substitute?

A: The R6007ENX has a lower drain-to-source voltage rating (600V versus 650V). This substitute is suitable only for applications where the maximum operating voltage does not exceed 600V. The reduced voltage rating provides a margin reduction of approximately 7.7% compared to the original specification.

Q: Are both substitute parts available in the same TO-220 package?

A: Both substitutes use TO-220-3 through-hole packaging, maintaining mechanical compatibility with the original STF11N65K3. The IRFIB5N65APBF features an isolated tab variant, which may provide thermal management advantages in specific mounting configurations. Standard PCB footprints for TO-220-3 accommodate both parts without modification.

Q: Do the substitute parts meet the same compliance requirements as the STF11N65K3?

A: Yes. Both IRFIB5N65APBF and R6007ENX are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original part. Both parts carry EAR99 ECCN classification and identical HTSUS codes, supporting equivalent supply chain and export documentation requirements.

Q: How do gate charge differences affect circuit design?

A: The R6007ENX has significantly lower gate charge (20 nC versus 42 nC for the original part), reducing gate drive power dissipation and allowing use of higher-impedance gate drive circuits. The IRFIB5N65APBF gate charge (48 nC) is marginally higher, requiring minimal adjustment to existing gate drive designs. Gate drive circuit redesign is not necessary for either substitute in most applications.

Q: What thermal considerations apply when substituting these parts?

A: The IRFIB5N65APBF has higher power dissipation rating (60W versus 35W), providing thermal margin in high-frequency switching applications. The R6007ENX power dissipation rating (40W) exceeds the original part, also providing thermal headroom. Both parts maintain the same operating temperature range (-55°C to 150°C), supporting equivalent thermal design approaches.

Q: Are there inventory or lead-time considerations for these substitutes?

A: The IRFIB5N65APBF has 1120 pieces in stock, and the R6007ENX has 2400 pieces in stock, compared to 9263 pieces of the obsolete STF11N65K3. Both substitutes are in active production status, supporting long-term availability. Specific lead-time and volume pricing information requires direct supplier contact.

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