STF110N10F7 Equivalent & Substitute Parts

Part Overview

The STF110N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 45A continuous drain current in a TO-220FP through-hole package. This device is part of the DeepGATE™ and STripFET™ VII series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with compatible electrical and mechanical specifications are necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	45	A
Rds On (Max) @ Id, Vgs	7	mOhm
Power Dissipation (Max)	30	W
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
Operating Temperature Range	-55 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the STF110N10F7 are identified based on the following critical parameters that determine functional compatibility:

Electrical Compatibility Criteria:

FET Type: N-Channel topology
Drain to Source Voltage (Vdss): Equal to or greater than 100V
Continuous Drain Current (Id): Equal to or greater than 45A at 25°C
On-State Resistance (Rds On): Equal to or less than 7 mOhm at rated conditions
Power Dissipation: Equal to or greater than 30W
Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
Operating Temperature Range: Minimum -55°C to 175°C

Mechanical Compatibility Criteria:

Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack or equivalent footprint
Supplier Device Package: TO-220FP or PG-TO220-FP

Regulatory Compliance:

RoHS3 Compliant
REACH Unaffected
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Parameter Comparison

Parameter	STF110N10F7 (Main Part)	IPA057N08N3GXKSA1 (Substitute)	Unit
Manufacturer	STMicroelectronics	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	100	80	V
Current - Continuous Drain (Id) @ 25°C	45	60	A
Rds On (Max) @ Id, Vgs	7 @ 22.5A, 10V	5.7 @ 60A, 10V	mOhm
Vgs(th) (Max) @ Id	4.5 @ 250µA	3.5 @ 90µA	V
Gate Charge (Qg) (Max) @ Vgs	72 @ 10V	69 @ 10V	nC
Vgs (Max)	±20	±20	V
Power Dissipation (Max)	30	39	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The IPA057N08N3GXKSA1 from Infineon Technologies is a direct substitute for the obsolete STF110N10F7. Both devices share identical mechanical compatibility through the TO-220-3 Full Pack footprint and through-hole mounting configuration, enabling direct PCB replacement without layout modifications.

Compliance and Regulatory Status: Both parts maintain ROHS3 compliance, REACH unaffected status, and MSL 1 (Unlimited) moisture sensitivity classification, ensuring equivalent environmental and regulatory qualification.

Electrical Performance: The IPA057N08N3GXKSA1 exceeds the STF110N10F7 in continuous drain current capacity (60A versus 45A) and power dissipation rating (39W versus 30W). The substitute device features lower on-state resistance (5.7 mOhm versus 7 mOhm), resulting in reduced conduction losses and improved thermal efficiency.

Voltage Rating Consideration: The substitute part is rated for 80V drain-to-source voltage, compared to the main part's 100V rating. Circuit designs operating at voltages below 80V are fully compatible. Applications requiring voltage margins above 80V require circuit-level voltage stress analysis to confirm suitability.

Product Availability: The IPA057N08N3GXKSA1 maintains active product status with confirmed inventory availability, providing long-term supply continuity compared to the obsolete STF110N10F7.

Frequently Asked Questions (FAQ)

Q: Can the IPA057N08N3GXKSA1 directly replace the STF110N10F7 in all applications?

A: Direct replacement is possible for applications operating at drain-to-source voltages of 80V or below. The substitute part's 80V Vdss rating is lower than the main part's 100V rating. Circuit designs must confirm that maximum operating voltage does not exceed 80V. All other electrical parameters (current capacity, on-state resistance, gate characteristics) are compatible or superior.

Q: What are the mechanical compatibility requirements?

A: Both parts use identical TO-220-3 Full Pack footprints with through-hole mounting. PCB layouts, heatsink interfaces, and lead spacing are fully compatible. No mechanical redesign is required for substitution.

Q: Are there differences in gate drive requirements?

A: Gate threshold voltage (Vgs(th)) differs slightly: the substitute part requires 3.5V at 90µA compared to 4.5V at 250µA for the main part. Gate charge is nearly identical (69 nC versus 72 nC at 10V). Standard gate driver circuits compatible with ±20V maximum gate voltage operate both devices without modification.

Q: How do thermal characteristics compare?

A: The IPA057N08N3GXKSA1 provides superior thermal performance with 39W maximum power dissipation versus 30W for the STF110N10F7. Lower on-state resistance (5.7 mOhm versus 7 mOhm) reduces conduction losses, resulting in lower junction temperatures at equivalent current levels.

Q: What is the inventory status of each part?

A: The STF110N10F7 is obsolete with 2220 pieces available as new original stock. The IPA057N08N3GXKSA1 is an active product with 1250 pieces in stock, ensuring ongoing availability for new designs and production continuity.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the STF110N10F7 and IPA057N08N3GXKSA1 are ROHS3 compliant, REACH unaffected, and classified as MSL 1 (Unlimited moisture sensitivity). Environmental and regulatory qualifications are equivalent.

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