STF10NK50Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STF10NK50Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 9A continuous drain current in a TO-220FP through-hole package. This device is part of the SuperMESH™ series and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new designs and production runs.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	9	A
On-State Resistance (Rds On Max) @ Id, Vgs	700 mOhm @ 4.5A, 10V	—
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 100µA
Gate Charge (Qg Max) @ Vgs	39.2	nC @ 10V
Power Dissipation (Max)	30	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STF10NK50Z is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: N-Channel topology must be maintained
Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 500V
Continuous Drain Current (Id): Substitute must meet or exceed 9A at 25°C
Gate Drive Voltage: Substitute must operate at 10V drive voltage
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V gate drive
Maximum Gate Voltage (Vgs Max): Must support ±30V operation

Mechanical Compatibility Criteria:

Mounting Type: Through-hole configuration required
Package / Case: TO-220-3 Full Pack or equivalent footprint

Regulatory & Compliance Criteria:

RoHS3 Compliance required
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred

Substitute parts are grouped based on whether they maintain these core parameters while offering improvements in current capacity, voltage rating, on-state resistance, or product status (active vs. obsolete).

Parameter Comparison

Parameter	STF10NK50Z (Main)	STF12NK60Z	STP11NM60FDFP	STP12NM50FP	TK9A45D(STA4,Q,M)
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	Toshiba Semiconductor
Product Status	Obsolete	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	500	600	600	500	450
Id @ 25°C (A)	9	10	11	12	9
Rds On Max @ Id, Vgs (mOhm)	700 @ 4.5A, 10V	640 @ 5A, 10V	450 @ 5.5A, 10V	350 @ 6A, 10V	770 @ 4.5A, 10V
Vgs(th) Max @ Id (V)	4.5 @ 100µA	4.5 @ 100µA	5 @ 250µA	5 @ 50µA	4 @ 1mA
Gate Charge Qg Max @ 10V (nC)	39.2	59	40	39	16
Power Dissipation Max (W)	30	35	35	35	40
Operating Temperature Range (°C)	-55 to 150	to 150	—	-65 to 150	to 150
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Inventory Status	2141 Pcs	2375 Pcs	50300 Pcs	1491 Pcs	732 Pcs

Engineering Selection Recommendations

STF12NK60Z (STMicroelectronics SuperMESH™)

This substitute offers a higher voltage rating (600V vs. 500V) and increased current capacity (10A vs. 9A) while maintaining the same gate drive voltage and threshold characteristics. The device is in active product status with robust inventory availability. It is suitable for applications requiring enhanced voltage margin and current headroom. RoHS3 compliance and MSL Level 1 rating are maintained.

STP11NM60FDFP (STMicroelectronics FDmesh™)

This substitute provides the highest current capacity (11A) among STMicroelectronics options with a 600V rating. It features significantly lower on-state resistance (450 mOhm vs. 700 mOhm), reducing power dissipation in switching applications. The device is in active product status with the highest inventory availability (50,300 pcs). Gate charge is comparable to the main part (40 nC vs. 39.2 nC). RoHS3 compliance and MSL Level 1 rating are maintained. Operating temperature range is not specified in available data.

STP12NM50FP (STMicroelectronics MDmesh™)

This substitute maintains the same 500V voltage rating as the main part while offering increased current capacity (12A vs. 9A) and significantly improved on-state resistance (350 mOhm vs. 700 mOhm). The device is in active product status with extended operating temperature range (-65°C to 150°C). It is the optimal choice for applications requiring voltage compatibility with the original design while benefiting from enhanced current handling and reduced conduction losses. RoHS3 compliance and MSL Level 1 rating are maintained.

TK9A45D(STA4,Q,M) (Toshiba Semiconductor π-MOSVII)

This substitute is a cross-manufacturer alternative with a lower voltage rating (450V vs. 500V) and matching current capacity (9A). It features the lowest gate charge (16 nC vs. 39.2 nC), enabling faster switching characteristics. The device is in active product status. This option is suitable only for applications where the 450V rating is acceptable and faster switching performance is beneficial. RoHS3 compliance and MSL Level 1 rating are maintained. This is a non-STMicroelectronics option requiring design verification for cross-manufacturer compatibility.

Frequently Asked Questions (FAQ)

Q: Can the STF12NK60Z directly replace the STF10NK50Z?

A: The STF12NK60Z is electrically compatible as a substitute. It maintains N-Channel topology, 10V gate drive voltage, and ±30V maximum gate voltage. The higher voltage rating (600V vs. 500V) and increased current capacity (10A vs. 9A) provide design margin. Both devices use TO-220-3 Full Pack packaging and are RoHS3 compliant. Verification of circuit performance under the substitute's electrical characteristics is required.

Q: What is the primary advantage of STP12NM50FP over the original STF10NK50Z?

A: The STP12NM50FP maintains the same 500V voltage rating while providing 33% higher current capacity (12A vs. 9A) and 50% lower on-state resistance (350 mOhm vs. 700 mOhm). This results in reduced conduction losses and improved thermal performance. The extended operating temperature range (-65°C to 150°C) provides additional environmental margin. The device is in active product status with long-term availability.

Q: Why does the TK9A45D have a lower voltage rating than the STF10NK50Z?

A: The TK9A45D is rated for 450V drain-to-source voltage, which is 50V lower than the STF10NK50Z (500V). This device is suitable only for applications where the 450V rating meets circuit requirements. The lower voltage rating is offset by faster switching characteristics due to significantly lower gate charge (16 nC vs. 39.2 nC). Cross-manufacturer substitution requires design verification.

Q: Are all substitute parts available in the same TO-220-3 Full Pack package?

A: All substitute parts listed are available in TO-220-3 Full Pack through-hole packaging, maintaining mechanical and thermal interface compatibility with the original STF10NK50Z. Specific supplier device packages vary (TO-220FP for STMicroelectronics parts, TO-220SIS for Toshiba), but all conform to the TO-220-3 Full Pack standard footprint.

Q: Which substitute offers the best on-state resistance performance?

A: The STP12NM50FP offers the lowest on-state resistance at 350 mOhm (measured at 6A, 10V gate voltage), representing a 50% improvement over the STF10NK50Z (700 mOhm at 4.5A, 10V). The STP11NM60FDFP provides the second-best performance at 450 mOhm (measured at 5.5A, 10V). Lower on-state resistance reduces conduction losses and heat generation in switching applications.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, matching the regulatory and environmental requirements of the original STF10NK50Z.

Q: What is the inventory status of each substitute?

A: STP11NM60FDFP has the highest inventory availability at 50,300 pieces. STF12NK60Z has 2,375 pieces available. STP12NM50FP has 1,491 pieces available. TK9A45D has 732 pieces available. The original STF10NK50Z has 2,141 pieces in stock despite its obsolete status.

Q: Can I use STP11NM60FDFP in a design originally specified for STF10NK50Z?

A: The STP11NM60FDFP is electrically compatible as a substitute. It maintains N-Channel topology, 10V gate drive voltage, and ±30V maximum gate voltage. The higher voltage rating (600V vs. 500V), increased current capacity (11A vs. 9A), and lower on-state resistance (450 mOhm vs. 700 mOhm) provide performance improvements. The TO-220-3 Full Pack package maintains mechanical compatibility. Design verification is required to confirm performance under the substitute's electrical characteristics.

Q: Why is the STF10NK50Z classified as obsolete?

A: The STF10NK50Z is classified as obsolete by STMicroelectronics, indicating it is no longer in active production. All substitute parts listed are in active product status, ensuring long-term availability and continued manufacturing support. Migration to an active substitute is recommended for new designs and future production runs.

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