STD80N6F6 Equivalent & Substitute Parts

Part Overview

The STD80N6F6 is an N-Channel 60V 80A MOSFET manufactured by STMicroelectronics in the DeepGATE™ and STripFET™ VI series. This device is packaged in DPAK (TO-252-3) surface mount configuration and is rated for 120W power dissipation at case temperature. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating the same surface mount DPAK package footprint.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-Resistance (Rds On) @ 40A, 10V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Power Dissipation (Max)	120	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the STD80N6F6 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal 60V
Package Type: Must be TO-252-3 DPAK (2 Leads + Tab) surface mount
FET Technology: Must be N-Channel Metal Oxide MOSFET
Operating Temperature Range: Must support -55°C to 175°C (TJ)
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must support minimum 80A at case temperature
On-Resistance (Rds On): Substitute must not exceed 6.5mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate voltage specification
Power Dissipation: Substitute must support minimum 120W at case temperature
RoHS3 Compliance: Required for environmental and regulatory compatibility

Substitute parts are grouped based on their ability to meet or exceed these parameters while maintaining identical package footprint and electrical interface characteristics.

Parameter Comparison

Parameter	STD80N6F6 (Main)	AOD2606	IPD90N06S4L06ATMA2	IRLR3636TRLPBF	NTD5862NT4G	TK60S06K3L(T6L1,NQ
Manufacturer	STMicroelectronics	Alpha & Omega Semiconductor	Infineon Technologies	Infineon Technologies	onsemi	Toshiba Semiconductor
Vdss (V)	60	60	60	60	60	60
Id @ 25°C (A)	80 (Tc)	46 (Tc)	90 (Tc)	50 (Tc)	98 (Tc)	60 (Ta)
Rds On (mOhm)	6.5 @ 40A, 10V	6.8 @ 20A, 10V	6.3 @ 90A, 10V	6.8 @ 50A, 10V	5.7 @ 45A, 10V	8.0 @ 30A, 10V
Vgs(th) (V)	4.5 @ 250µA	3.5 @ 250µA	2.2 @ 40µA	2.5 @ 100µA	4.0 @ 250µA	3.0 @ 1mA
Gate Charge Qg (nC)	122 @ 10V	75 @ 10V	75 @ 10V	49 @ 4.5V	82 @ 10V	60 @ 10V
Power Dissipation (W)	120 (Tc)	150 (Tc)	79 (Tc)	143 (Tc)	115 (Tc)	88 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3 DPAK	TO-252-3 DPAK	PG-TO252-3-11	TO-252AA DPAK	TO-252-3 DPAK	TO-252-3 DPAK+
Product Status	Obsolete	Active	Active	Active	Obsolete	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes
AEC-Q101 Qualification	Yes	No	Yes	No	No	No

Engineering Selection Recommendations

Primary Substitute: IPD90N06S4L06ATMA2

The IPD90N06S4L06ATMA2 from Infineon Technologies is the preferred substitute for the STD80N6F6. This device meets all primary substitution criteria: 60V Vdss rating, 90A continuous drain current (exceeding the 80A requirement), compatible DPAK package footprint (PG-TO252-3-11), and full -55°C to 175°C operating temperature range. The part carries AEC-Q101 automotive qualification matching the main part's grade specification. On-resistance of 6.3mOhm at 90A, 10V is superior to the main part's 6.5mOhm specification. Power dissipation of 79W at case temperature is within acceptable thermal margins for the 120W rated application. Product status is active, ensuring long-term availability and supply chain continuity.

Secondary Substitute: NTD5862NT4G

The NTD5862NT4G from onsemi provides electrical performance exceeding the STD80N6F6 specification with 98A continuous drain current and superior on-resistance of 5.7mOhm at 45A, 10V. The device maintains 60V Vdss rating, DPAK package compatibility, and full operating temperature range. Power dissipation of 115W at case temperature is acceptable for the 120W rated application. Product status is obsolete, similar to the main part, which may limit future availability but does not affect current substitution validity. RoHS3 compliance is confirmed.

Tertiary Substitute: IRLR3636TRLPBF

The IRLR3636TRLPBF from Infineon Technologies (HEXFET® series) meets core substitution requirements with 60V Vdss, 50A continuous drain current, and TO-252AA DPAK package compatibility. On-resistance of 6.8mOhm at 50A, 10V is within acceptable tolerance. Power dissipation of 143W at case temperature exceeds the 120W requirement. Operating temperature range of -55°C to 175°C is fully compatible. Product status is active, providing supply continuity. This part is suitable for applications where the 50A current rating is sufficient and lower gate charge (49nC) is advantageous for switching speed optimization.

Alternative Substitute: TK60S06K3L(T6L1,NQ

The TK60S06K3L(T6L1,NQ from Toshiba Semiconductor (U-MOSIV series) maintains 60V Vdss and DPAK package compatibility with 60A continuous drain current rating. On-resistance of 8.0mOhm at 30A, 10V is higher than the main part but acceptable for lower-current applications. Power dissipation of 88W at case temperature is lower than the 120W requirement and may limit thermal headroom in high-power applications. Product status is active. This part is suitable for designs where continuous current demand does not exceed 60A.

Not Recommended: AOD2606

The AOD2606 from Alpha & Omega Semiconductor does not meet minimum current requirements with only 46A continuous drain current at case temperature, falling significantly below the 80A specification of the main part. While the device maintains 60V Vdss, DPAK package compatibility, and RoHS3 compliance, the current rating deficiency makes this part unsuitable for direct substitution in applications requiring full 80A capability.

Frequently Asked Questions (FAQ)

Q: Can the IPD90N06S4L06ATMA2 be used as a direct replacement for the STD80N6F6?

A: Yes. The IPD90N06S4L06ATMA2 meets all primary substitution criteria: identical 60V Vdss rating, compatible DPAK package footprint, superior 90A continuous drain current (exceeding the 80A requirement), matching -55°C to 175°C operating temperature range, and AEC-Q101 automotive qualification. On-resistance and power dissipation specifications are within acceptable parameters for the application.

Q: What is the difference between the PG-TO252-3-11 package of the IPD90N06S4L06ATMA2 and the standard TO-252-3 DPAK of the STD80N6F6?

A: Both packages are mechanically and electrically compatible TO-252-3 DPAK variants. The PG-TO252-3-11 designation indicates Infineon's specific package specification, but the physical footprint, lead configuration, and thermal characteristics are equivalent to the standard TO-252-3 DPAK. PCB layout and assembly processes require no modification.

Q: Why is the NTD5862NT4G listed as obsolete if it is a suitable substitute?

A: Product status does not determine substitution validity. The NTD5862NT4G meets all electrical and mechanical substitution criteria and is currently in stock (4515 pcs). Obsolete status indicates the manufacturer has discontinued new production, but existing inventory remains available for use. For long-term production requirements, active-status alternatives such as IPD90N06S4L06ATMA2 or IRLR3636TRLPBF are preferred.

Q: Can the IRLR3636TRLPBF be used in applications requiring the full 80A continuous drain current?

A: No. The IRLR3636TRLPBF is rated for 50A continuous drain current at case temperature, which is 30A below the STD80N6F6 specification. This part is suitable only for applications where the actual continuous current demand does not exceed 50A. For designs requiring 80A capability, use IPD90N06S4L06ATMA2 or NTD5862NT4G.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (IPD90N06S4L06ATMA2, AOD2606, IRLR3636TRLPBF, NTD5862NT4G, and TK60S06K3L(T6L1,NQ) carry RoHS3 compliance certification, matching the environmental compliance status of the main part STD80N6F6.

Q: What is the significance of gate threshold voltage (Vgs(th)) differences among substitute parts?

A: Gate threshold voltage determines the gate-source voltage required to initiate channel conduction. The STD80N6F6 specifies 4.5V at 250µA. Substitute parts range from 2.2V to 4.5V. Lower threshold voltages (such as IPD90N06S4L06ATMA2 at 2.2V) enable faster switching and lower gate drive power requirements. Higher threshold voltages (such as AOD2606 at 3.5V) provide improved noise immunity. Selection depends on gate drive circuit design and switching speed requirements.

Q: Does the higher gate charge (Qg) of the STD80N6F6 (122nC) compared to substitutes affect circuit design?

A: Gate charge affects switching speed and gate drive power dissipation. The STD80N6F6's 122nC gate charge is higher than most substitutes (ranging from 49nC to 82nC). Substitutes with lower gate charge enable faster switching transitions and reduced gate driver power consumption. If the existing gate drive circuit is designed for 122nC, substitutes with lower gate charge will operate with improved performance margins. No circuit modification is required.

Q: Is AEC-Q101 qualification required for all applications?

A: AEC-Q101 qualification is required for automotive-grade applications. The STD80N6F6 carries AEC-Q101 qualification. Among substitutes, only IPD90N06S4L06ATMA2 carries AEC-Q101 qualification. For non-automotive applications, AEC-Q101 qualification is not a requirement. For automotive applications, IPD90N06S4L06ATMA2 is the only substitute meeting this specification.

Q: Can multiple substitute parts be used interchangeably within the same production run?

A: No. While multiple parts meet substitution criteria, they have different electrical characteristics (gate charge, threshold voltage, on-resistance). Using different parts within the same production run may result in performance variation and inconsistent switching behavior. Select a single substitute part for a given production batch and maintain consistency throughout the manufacturing cycle.

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