STD65NF06 Equivalent & Substitute Parts

Part Overview

The STD65NF06 is an N-Channel 60V 60A MOSFET manufactured by STMicroelectronics in the STripFET™ II series, housed in a DPAK surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for new designs and ongoing production requirements. The part delivers 110W maximum power dissipation and operates across a temperature range of -55°C to 175°C. Substitute parts are selected based on matching or exceeding critical electrical parameters while maintaining compatible packaging and thermal characteristics.

Substiute Parts

STD65NF06
STMicroelectronicsIn Stock: 15341STD65NF06 Datasheet
STD65NF06
Current Part
STD60NF06T4
STMicroelectronicsIn Stock: 40156STD60NF06T4 Datasheet
STD60NF06T4
Direct
BUK9217-75B,118
Nexperia USA Inc.In Stock: 13491BUK9217-75B,118 Datasheet
BUK9217-75B,118
Similar
FDD13AN06A0
onsemiIn Stock: 15558FDD13AN06A0 Datasheet
FDD13AN06A0
Similar
IPD50N06S4L12ATMA2
Infineon TechnologiesIn Stock: 7410IPD50N06S4L12ATMA2 Datasheet
IPD50N06S4L12ATMA2
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 60 A (Tc)
Rds On (Max) @ 30A, 10V 14 mOhm
Gate Charge (Qg) @ 10V 75 nC
Power Dissipation (Max) 110 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type DPAK (TO-252-3) Surface Mount
Vgs(th) @ 250µA 4 V
Input Capacitance (Ciss) @ 25V 1700 pF

Substitute Part Grouping Explanation

Substitute parts for the STD65NF06 are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

  • Drain to Source Voltage (Vdss): 60V minimum
  • Continuous Drain Current (Id): 60A or greater at 25°C
  • Package Type: DPAK (TO-252-3) surface mount
  • Operating Temperature Range: -55°C to 175°C minimum
  • On-Resistance (Rds On): 14mOhm or lower at specified conditions

Secondary Compatibility Factors:

  • Gate Charge (Qg): Lower values preferred for reduced switching losses
  • Power Dissipation: 110W or greater
  • Vgs(th): Threshold voltage compatibility for gate drive circuits
  • Input Capacitance: Affects switching speed and gate drive requirements

Parts are grouped into two categories: direct substitutes (matching all primary criteria) and similar substitutes (meeting voltage and current requirements with minor parameter variations).

Parameter Comparison

Parameter STD65NF06 STD60NF06T4 BUK9217-75B,118 FDD13AN06A0 IPD50N06S4L12ATMA2
Manufacturer STMicroelectronics STMicroelectronics Nexperia USA Inc. onsemi Infineon Technologies
Vdss (V) 60 60 75 60 60
Id @ 25°C (A) 60 60 64 50 50
Rds On (mOhm) 14 @ 30A, 10V 16 @ 30A, 10V 15 @ 25A, 10V 13.5 @ 50A, 10V 12 @ 50A, 10V
Qg (nC) @ 10V 75 66 35 29 40
Power Dissipation (W) 110 110 167 115 50
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 185 -55 to 175 -55 to 175
Package DPAK DPAK DPAK TO-252AA PG-TO252-3-11
Product Status Obsolete Active Obsolete Active Active
Series STripFET™ II STripFET™ II TrenchMOS™ PowerTrench® OptiMOS™
Vgs(th) (V) 4 @ 250µA 4 @ 250µA 2 @ 1mA 4 @ 250µA 2.2 @ 20µA
Ciss (pF) @ 25V 1700 1810 4029 1350 2890
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Direct Substitute - Preferred:

STD60NF06T4 (STMicroelectronics) is the primary direct substitute for the obsolete STD65NF06. Both devices are from the same STripFET™ II series and share identical voltage and current ratings (60V, 60A). The STD60NF06T4 is in active production status, ensuring long-term availability. On-resistance is marginally higher (16mOhm vs. 14mOhm), and gate charge is lower (66nC vs. 75nC), resulting in improved switching efficiency. This part is suitable for direct replacement in existing designs with no circuit modifications required. Packaging is compatible DPAK surface mount. RoHS3 compliance and MSL 1 rating match the original specification.

Alternative Substitutes - Application Dependent:

FDD13AN06A0 (onsemi) provides an active production alternative with superior on-resistance performance (13.5mOhm) and significantly lower gate charge (29nC). Continuous drain current is rated at 50A, which is 10A lower than the original specification. This part is suitable for applications where the 50A rating is sufficient and where reduced switching losses are beneficial. Package compatibility is maintained with TO-252AA DPAK configuration. Power dissipation is rated at 115W, exceeding the original 110W specification.

IPD50N06S4L12ATMA2 (Infineon Technologies) offers the lowest on-resistance (12mOhm) and includes automotive-grade qualification (AEC-Q101). Continuous drain current is 50A, limiting this part to applications not requiring the full 60A capability. Power dissipation is rated at 50W, which is lower than the original specification and may require thermal design review. This part is suitable for automotive applications requiring AEC-Q101 qualification. Package is PG-TO252-3-11, maintaining DPAK compatibility.

BUK9217-75B,118 (Nexperia USA Inc.) is an obsolete part with higher voltage rating (75V) and current capability (64A). While this part exceeds the original specifications, its obsolete status makes it unsuitable for new designs. This part is listed for reference only in legacy system maintenance scenarios.

Selection Criteria Summary:

  • For direct replacement with active production status: STD60NF06T4
  • For improved efficiency with reduced current requirements: FDD13AN06A0
  • For automotive applications with AEC-Q101 requirement: IPD50N06S4L12ATMA2
  • All substitutes maintain DPAK surface mount packaging and -55°C to 175°C operating range
  • All substitutes are RoHS3 compliant with MSL 1 rating

Frequently Asked Questions (FAQ)

Q: Can STD60NF06T4 be used as a direct replacement for STD65NF06 without circuit modifications?

A: Yes. The STD60NF06T4 is a direct substitute with identical voltage (60V) and current (60A) ratings. Both devices use DPAK packaging and share the same gate drive voltage requirements (10V). The slightly higher on-resistance (16mOhm vs. 14mOhm) and lower gate charge (66nC vs. 75nC) result in negligible performance differences in most applications. No circuit modifications are required.

Q: What is the primary advantage of FDD13AN06A0 over STD60NF06T4?

A: The FDD13AN06A0 features significantly lower gate charge (29nC vs. 66nC) and superior on-resistance (13.5mOhm vs. 16mOhm). These characteristics reduce switching losses and improve overall efficiency. However, the continuous drain current is limited to 50A compared to 60A, making this part suitable only for applications not requiring the full current capability of the original device.

Q: Is IPD50N06S4L12ATMA2 suitable for high-current applications?

A: No. The IPD50N06S4L12ATMA2 is rated for 50A continuous drain current, which is 10A below the original STD65NF06 specification. This part is intended for applications where current requirements do not exceed 50A. Additionally, the power dissipation rating (50W) is significantly lower than the original (110W), requiring thermal design verification before implementation.

Q: Why is BUK9217-75B,118 listed if it is obsolete?

A: The BUK9217-75B,118 is included for reference in legacy system maintenance and repair scenarios. Its obsolete status makes it unsuitable for new designs. The part exceeds the original voltage (75V) and current (64A) specifications but should not be selected for new applications due to availability constraints.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use DPAK (TO-252-3) surface mount packaging with identical pin configurations. PCB footprints are compatible across all listed substitutes. However, thermal pad design should be reviewed for IPD50N06S4L12ATMA2 due to its lower power dissipation rating.

Q: What is the impact of different Vgs(th) values on gate drive circuit design?

A: The STD65NF06, STD60NF06T4, and FDD13AN06A0 share a Vgs(th) of 4V at 250µA, ensuring compatibility with existing gate drive circuits. The IPD50N06S4L12ATMA2 and BUK9217-75B,118 have lower threshold voltages (2.2V and 2V respectively), which may require gate drive circuit verification to ensure adequate switching performance. Standard 10V gate drive signals are compatible with all parts.

Q: Which substitute part offers the best thermal performance?

A: The BUK9217-75B,118 offers the highest power dissipation rating (167W), followed by FDD13AN06A0 (115W) and STD60NF06T4 (110W). However, the BUK9217-75B,118 is obsolete. For active production parts, FDD13AN06A0 provides the best thermal margin. IPD50N06S4L12ATMA2 has the lowest power dissipation rating (50W) and requires thermal design review for high-power applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original STD65NF06 specification. All parts are suitable for lead-free soldering processes.

Q: Which substitute part is recommended for automotive applications?

A: The IPD50N06S4L12ATMA2 is the only substitute with automotive-grade qualification (AEC-Q101). This part is suitable for automotive applications requiring formal qualification documentation. However, the 50A current rating and 50W power dissipation must be verified against application requirements.

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