STD5N60DM2 Equivalent & Substitute Parts

Part Overview

The STD5N60DM2 is an N-Channel 600V 3.5A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM2 series. This device is designed for surface mount applications in the DPAK package and is classified as Active product status. The part operates across a temperature range of -55°C to 150°C and dissipates up to 45W at the case temperature.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter tolerances. Substitution becomes necessary due to inventory availability, supply chain considerations, or design flexibility requirements while maintaining functional equivalence in the target application.

Substiute Parts

STD5N60DM2

STMicroelectronicsIn Stock: 2501STD5N60DM2 Datasheet

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R6004RND3TL1

Rohm SemiconductorIn Stock: 4052R6004RND3TL1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STD5N60DM2 are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Equivalence: Drain to Source Voltage (Vdss) must equal 600V to maintain dielectric strength and voltage blocking capability in the target circuit.

Package Compatibility: The substitute part must utilize the TO-252-3 DPAK package format to ensure mechanical fit and thermal interface compatibility with existing PCB layouts and heat dissipation requirements.

Current Handling Capability: The continuous drain current rating must meet or exceed the application requirement. Substitute parts with equal or higher current ratings maintain functional compatibility.

Thermal Performance: Power dissipation capability and operating temperature range must support the thermal demands of the application without exceeding junction temperature limits.

Surface Mount Technology: Both the main part and substitute must be surface mount devices to maintain manufacturing process compatibility.

The R6004RND3TL1 from Rohm Semiconductor qualifies as a substitute based on matching voltage rating (600V), package type (TO-252-3 DPAK), surface mount configuration, and exceeding the current rating specification (4A versus 3.5A).

Parameter Comparison

Engineering Selection Recommendations

STD5N60DM2 (Primary Selection)

The STD5N60DM2 is the original specified component with Active product status and full RoHS3 compliance. This part is suitable for applications requiring the exact electrical characteristics and thermal performance specified in the design. The device maintains REACH Unaffected status and carries EAR99 classification. Current inventory of 2458 pieces supports immediate availability.

R6004RND3TL1 (Substitute Selection)

The R6004RND3TL1 from Rohm Semiconductor is a qualified substitute for applications where the STD5N60DM2 is unavailable. This part maintains voltage rating equivalence (600V), identical package format (TO-252-3 DPAK), and surface mount compatibility. The substitute provides higher continuous drain current (4A versus 3.5A) and increased power dissipation capability (60W versus 45W), making it suitable for applications operating at or below the original part's specifications. The R6004RND3TL1 carries Active product status with inventory of 4033 pieces available. Both parts share identical maximum gate voltage (±30V) and comply with the same regulatory classifications (EAR99, HTSUS 8541.29.0095).

Selection between these parts should be based on application current requirements, thermal design margins, and supply chain availability. Both devices are suitable for equivalent circuit implementations within the specified electrical operating envelope.

Frequently Asked Questions (FAQ)

Q: Can the R6004RND3TL1 directly replace the STD5N60DM2 in an existing PCB design?

A: Yes. Both parts use the identical TO-252-3 DPAK package format with the same pinout and thermal interface. No PCB layout modifications are required for mechanical or electrical compatibility.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are manufacturer-specific performance characteristics. The R6004RND3TL1 provides higher continuous drain current (4A versus 3.5A) and greater power dissipation capability (60W versus 45W). The STD5N60DM2 has lower gate charge (8.6nC versus 10.5nC) and higher input capacitance (375pF versus 230pF). Both maintain the same 600V voltage rating and ±30V gate voltage specification.

Q: Are there any thermal considerations when substituting these parts?

A: The R6004RND3TL1 has higher power dissipation capability (60W versus 45W), which provides additional thermal margin in the application. Both parts operate across the same temperature range up to 150°C. Thermal design should account for the specific power dissipation of the selected part based on actual circuit operating conditions.

Q: Do both parts have the same regulatory compliance?

A: Yes. Both the STD5N60DM2 and R6004RND3TL1 carry EAR99 classification and share the same HTSUS code (8541.29.0095). Both are Active products with appropriate compliance certifications for their respective manufacturers.

Q: What is the significance of the different Rds On specifications?

A: The Rds On (on-state resistance) is measured at different conditions for each part. The STD5N60DM2 specifies 1.55Ohm at 1.75A and 10V gate voltage, while the R6004RND3TL1 specifies 1.73Ohm at 2A and 15V gate voltage. These measurements reflect manufacturer-specific test conditions and do not indicate incompatibility. Both values are within acceptable ranges for equivalent circuit operation.

Q: Can I use the R6004RND3TL1 in a design originally specified for the STD5N60DM2?

A: Yes, provided the application current requirements do not exceed 3.5A (the original specification). The R6004RND3TL1's higher current rating (4A) and power dissipation (60W) make it suitable for applications operating at or below the original part's electrical envelope. Gate drive voltage and thermal management should be verified for the specific application circuit.