STD3NK100Z Equivalent & Substitute Parts

Part Overview

The STD3NK100Z is an N-Channel 1000V MOSFET manufactured by STMicroelectronics, designed for surface mount applications in the DPAK package. This device operates at continuous drain currents of 2.5A and dissipates up to 90W, making it suitable for high-voltage switching and power conversion circuits. The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified to provide design flexibility, inventory alternatives, and sourcing options while maintaining electrical and mechanical compatibility within specified parameter ranges.

Substiute Parts

STD3NK100Z
STMicroelectronicsIn Stock: 5223STD3NK100Z Datasheet
STD3NK100Z
Current Part
FQD2N100TM
onsemiIn Stock: 40231FQD2N100TM Datasheet
FQD2N100TM
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 1000 V
Continuous Drain Current (Id) @ 25°C 2.5 A (Tc)
Rds On (Max) @ Id, Vgs 6 Ohm @ 1.25A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 4.5 V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10V
Power Dissipation (Max) 90 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type DPAK (TO-252-3) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 601 pF @ 25V
Maximum Gate Voltage (Vgs) ±30 V

Substitute Part Grouping Explanation

Substitute parts for the STD3NK100Z are identified based on the following critical electrical and mechanical parameters that determine functional compatibility:

Voltage Rating Compatibility: All substitute parts must maintain the 1000V Drain to Source Voltage (Vdss) rating to ensure operation in identical high-voltage circuit environments.

Package Compatibility: Substitute parts must use the DPAK (TO-252-3) surface mount package to ensure direct PCB layout compatibility without redesign.

Gate Drive Voltage: All parts operate with 10V drive voltage specification, ensuring compatibility with standard gate driver circuits.

Operating Temperature Range: All parts maintain the -55°C to 150°C junction temperature range, supporting identical thermal operating conditions.

Current Rating Consideration: While the STD3NK100Z specifies 2.5A continuous drain current, substitute parts with lower current ratings (1.6A) remain functionally valid for applications where the actual circuit current demand does not exceed the substitute part's rating. The substitute part's current specification represents a design constraint rather than a disqualifying factor.

On-Resistance (Rds On): Substitute parts with higher Rds On values (9 Ohm versus 6 Ohm) result in increased power dissipation and heat generation but remain electrically functional within the specified voltage and current operating windows.

Compliance and Status: All substitute parts maintain active product status, RoHS3 compliance, and unlimited moisture sensitivity rating (MSL 1), ensuring regulatory and supply chain compatibility.

Parameter Comparison

Parameter STD3NK100Z (STMicroelectronics) FQD2N100TM (onsemi) Unit
Drain to Source Voltage (Vdss) 1000 1000 V
Continuous Drain Current (Id) @ 25°C 2.5 1.6 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 6 @ 1.25A, 10V 9 @ 800mA, 10V Ohm
Gate Threshold Voltage Vgs(th) (Max) @ Id 4.5 @ 50µA 5 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 18 @ 10V 15.5 @ 10V nC
Maximum Gate Voltage (Vgs) ±30 ±30 V
Input Capacitance (Ciss) (Max) @ Vds 601 @ 25V 520 @ 25V pF
Power Dissipation (Max) 90 (Tc) 50 (Tc) W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type DPAK (TO-252-3) TO-252AA (DPAK) Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -
Product Status Active Active -

Engineering Selection Recommendations

Primary Selection (STD3NK100Z): The STD3NK100Z is the specified component for applications requiring 2.5A continuous drain current at 1000V with 90W power dissipation capability. This part delivers the lowest on-resistance (6 Ohm) and highest current handling capacity within the 1000V DPAK family. Selection is appropriate for designs with thermal management provisions and current demands at or near 2.5A.

Substitute Selection (FQD2N100TM): The FQD2N100TM from onsemi serves as a functional substitute for applications where continuous drain current requirements do not exceed 1.6A. This part maintains identical voltage rating, package compatibility, and operating temperature range. The higher on-resistance (9 Ohm) and reduced power dissipation rating (50W Tc) require thermal design verification for applications approaching the 1.6A current limit. Both parts maintain active production status and full RoHS3 compliance, ensuring long-term supply chain viability and regulatory compliance.

Substitution Constraints: The FQD2N100TM is not suitable for direct replacement in designs requiring sustained currents above 1.6A or thermal dissipation exceeding 50W. Circuit redesign or thermal management modifications may be necessary when substituting from the STD3NK100Z to the FQD2N100TM in high-current applications.

Frequently Asked Questions (FAQ)

Q: Can the FQD2N100TM directly replace the STD3NK100Z in all applications?

A: The FQD2N100TM is electrically compatible for applications where the continuous drain current does not exceed 1.6A. The substitute part maintains the same 1000V voltage rating, DPAK package, and operating temperature range. However, the reduced current rating and power dissipation capability (50W versus 90W) require circuit analysis to confirm the substitute part operates within its specified limits.

Q: What are the key differences between these two parts?

A: The primary differences are continuous drain current (2.5A versus 1.6A), on-resistance (6 Ohm versus 9 Ohm), and maximum power dissipation (90W versus 50W). Both parts share identical voltage ratings (1000V), package type (DPAK), gate drive voltage (10V), and operating temperature range (-55°C to 150°C). The FQD2N100TM exhibits lower gate charge (15.5 nC versus 18 nC) and input capacitance (520 pF versus 601 pF).

Q: Are both parts available in the same package?

A: Yes. Both the STD3NK100Z and FQD2N100TM use the DPAK (TO-252-3) surface mount package, enabling direct PCB footprint compatibility without layout modifications.

Q: What compliance certifications apply to both parts?

A: Both parts are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both maintain active product status with full manufacturing support.

Q: How does on-resistance affect circuit performance?

A: On-resistance (Rds On) directly impacts power dissipation and switching losses. The STD3NK100Z's lower on-resistance (6 Ohm) generates less heat during conduction. The FQD2N100TM's higher on-resistance (9 Ohm) increases power dissipation, requiring thermal design verification to ensure the 50W maximum rating is not exceeded in the target application.

Q: Can I use the FQD2N100TM in a design originally specified for the STD3NK100Z?

A: Substitution is valid only if circuit analysis confirms the actual continuous drain current remains below 1.6A and total power dissipation does not exceed 50W. Gate drive circuits, thermal management, and current limiting provisions must be verified to ensure the substitute part operates within its electrical and thermal specifications.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) affects gate driver power consumption and switching speed. The FQD2N100TM's lower gate charge (15.5 nC versus 18 nC) results in slightly faster switching transitions and reduced gate driver power requirements. This difference is typically negligible in most applications but may be relevant in high-frequency switching circuits.

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