STD20NF20 N-Channel MOSFET 200V 18A DPAK Equivalent & Substitute Parts

Part Overview

The STD20NF20 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by STMicroelectronics, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. The device is housed in a Surface Mount DPAK (TO-252-3) package and is part of the STripFET™ series. This component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary part number becomes unavailable due to supply constraints, manufacturing discontinuation, or when alternative manufacturers' components offer equivalent electrical and mechanical specifications within the same package family. All substitute parts listed maintain compatibility with the original design parameters while meeting identical regulatory and environmental standards.

Substiute Parts

STD20NF20
STMicroelectronicsIn Stock: 2150STD20NF20 Datasheet
STD20NF20
Current Part
FDD18N20LZ
onsemiIn Stock: 17657FDD18N20LZ Datasheet
FDD18N20LZ
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FDD2670
onsemiIn Stock: 25253FDD2670 Datasheet
FDD2670
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IRFR15N20DTRPBF
Infineon TechnologiesIn Stock: 10297IRFR15N20DTRPBF Datasheet
IRFR15N20DTRPBF
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IRFR4620TRLPBF
Infineon TechnologiesIn Stock: 38140IRFR4620TRLPBF Datasheet
IRFR4620TRLPBF
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PJD18N20_L2_00001
Panjit International Inc.In Stock: 3644PJD18N20_L2_00001 Datasheet
PJD18N20_L2_00001
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 18 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 125 mOhm @ 10A, 10V mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10V
Power Dissipation (Max) 110 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3, DPAK Surface Mount
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution eligibility for the STD20NF20 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 200V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET Metal Oxide (exact match required)
  • Package Type: TO-252-3, DPAK Surface Mount (exact match required)
  • Gate Voltage Maximum (Vgs Max): ±20V minimum (±30V acceptable)
  • Moisture Sensitivity Level: MSL 1 (exact match required)
  • RoHS Status: ROHS3 Compliant (exact match required)

Secondary Compatibility Parameters:

  • Continuous Drain Current (Id): 16A to 24A acceptable (STD20NF20 rated at 18A)
  • Rds On (Max): 78 mOhm to 165 mOhm acceptable (STD20NF20 rated at 125 mOhm)
  • Power Dissipation (Max): 83W to 144W acceptable (STD20NF20 rated at 110W)
  • Operating Temperature Range: -55°C minimum to 150°C or higher (STD20NF20 rated to 175°C)
  • Gate Charge (Qg): 24 nC to 43 nC acceptable (STD20NF20 rated at 39 nC)

All substitute parts listed meet the primary criteria and fall within acceptable ranges for secondary parameters. Variations in secondary parameters reflect different manufacturer process technologies and design approaches while maintaining functional equivalence within the specified voltage and current ratings.

Parameter Comparison

Parameter STD20NF20 (STMicroelectronics) FDD18N20LZ (onsemi) FDD2670 (onsemi) IRFR15N20DTRPBF (Infineon) IRFR4620TRLPBF (Infineon) PJD18N20_L2_00001 (Panjit)
Drain to Source Voltage (Vdss) 200V 200V 200V 200V 200V 200V
Continuous Drain Current (Id) @ 25°C 18A (Tc) 16A (Tc) 3.6A (Ta) 17A (Tc) 24A (Tc) 18A (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 10A, 10V 125 mOhm @ 8A, 10V 130 mOhm @ 3.6A, 10V 165 mOhm @ 10A, 10V 78 mOhm @ 15A, 10V 160 mOhm @ 9A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA 4.5V @ 250µA 5.5V @ 250µA 5V @ 100µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10V 40 nC @ 10V 43 nC @ 10V 41 nC @ 10V 38 nC @ 10V 24 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 25V 1575 pF @ 25V 1228 pF @ 100V 910 pF @ 25V 1710 pF @ 50V 1017 pF @ 25V
Power Dissipation (Max) 110W (Tc) 89W (Tc) 70W (Tc) 140W (Tc) 144W (Tc) 83W (Tc)
Operating Temperature Range -55°C to 175°C (TJ) -55°C to 150°C (TJ) -55°C to 150°C (TJ) -55°C to 175°C (TJ) -55°C to 175°C (TJ) -55°C to 150°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±30V ±20V ±20V
Package Type TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level MSL 1 MSL 1 MSL 1 MSL 1 MSL 1 MSL 1
Product Status Active Active Active Active Active Active

Engineering Selection Recommendations

All substitute parts listed are Active product status components with full RoHS3 compliance and MSL 1 rating, meeting the regulatory and environmental requirements of the original STD20NF20. Selection among substitute parts depends on application-specific requirements within the following categories:

High Current Capability (24A rated): The IRFR4620TRLPBF (Infineon) provides the highest continuous drain current rating at 24A with superior on-resistance performance (78 mOhm). This part is suitable for applications requiring maximum current headroom and lowest conduction losses. Operating temperature range extends to 175°C, matching the original part.

Matched Current Rating (18A rated): The PJD18N20_L2_00001 (Panjit International Inc.) provides an exact 18A continuous drain current match to the STD20NF20. This part offers the lowest gate charge specification (24 nC) among all substitutes, resulting in faster switching characteristics. Operating temperature range is limited to 150°C.

Balanced Performance (16-17A rated): The FDD18N20LZ (onsemi) and IRFR15N20DTRPBF (Infineon) provide near-equivalent current ratings at 16A and 17A respectively. The FDD18N20LZ offers lower gate threshold voltage (2.5V) for enhanced gate drive efficiency. The IRFR15N20DTRPBF maintains the full 175°C operating temperature range with higher gate voltage tolerance (±30V).

Lower Current Applications (3.6A rated): The FDD2670 (onsemi) is suitable only for applications with significantly reduced current requirements and is not recommended as a direct substitute for the STD20NF20 due to its 3.6A rating.

All substitute parts maintain identical package geometry (TO-252-3, DPAK) and are compatible with existing PCB layouts and assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the FDD2670 be used as a direct substitute for the STD20NF20?

A: No. While the FDD2670 meets the voltage and package requirements, its continuous drain current rating of 3.6A is significantly lower than the STD20NF20's 18A rating. This part is suitable only for applications with substantially reduced current requirements and would result in circuit malfunction if used in designs expecting 18A capability.

Q: What is the difference between the IRFR4620TRLPBF and the STD20NF20 in terms of on-resistance?

A: The IRFR4620TRLPBF has a lower on-resistance specification of 78 mOhm (measured at 15A, 10V) compared to the STD20NF20's 125 mOhm (measured at 10A, 10V). Lower on-resistance results in reduced conduction losses and heat generation during operation. The IRFR4620TRLPBF is suitable for applications where minimizing power dissipation is critical.

Q: Are all substitute parts compatible with the same PCB layout as the STD20NF20?

A: Yes. All substitute parts use the identical TO-252-3 DPAK package with the same pin configuration and mechanical dimensions. No PCB layout modifications are required for substitution.

Q: What is the significance of the gate charge (Qg) parameter when selecting a substitute?

A: Gate charge determines the amount of charge required to switch the MOSFET on and off. Lower gate charge (such as the PJD18N20_L2_00001 at 24 nC) results in faster switching transitions and reduced gate drive power requirements. Higher gate charge (such as the IRFR4620TRLPBF at 38 nC) may require more robust gate drive circuitry but is still within acceptable operating parameters.

Q: Can the IRFR15N20DTRPBF be used in applications requiring the full 175°C operating temperature range?

A: Yes. The IRFR15N20DTRPBF is rated for -55°C to 175°C operating temperature, matching the STD20NF20's temperature range. This part is suitable for high-temperature applications.

Q: What is the difference between the FDD18N20LZ and the STD20NF20 in terms of gate threshold voltage?

A: The FDD18N20LZ has a lower gate threshold voltage of 2.5V (at 250µA) compared to the STD20NF20's 4V. Lower threshold voltage allows the device to turn on with reduced gate drive voltage, which can improve efficiency in low-voltage gate drive circuits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant with MSL 1 rating, meeting identical environmental and regulatory standards as the original STD20NF20.

Q: Which substitute part offers the best overall match to the STD20NF20?

A: The PJD18N20_L2_00001 (Panjit International Inc.) provides an exact 18A continuous drain current match with identical 200V voltage rating and DPAK package. However, its operating temperature range is limited to 150°C. For applications requiring the full 175°C temperature range, the IRFR15N20DTRPBF (17A) or IRFR4620TRLPBF (24A) are preferred alternatives.

Q: What does the "Tc" designation in the current rating mean?

A: "Tc" indicates that the current rating is measured at the case temperature (Tc) of 25°C under specified thermal conditions. This is the standard measurement condition for continuous drain current specifications in MOSFET datasheets.

Q: Can the IRFR4620TRLPBF be used in place of the STD20NF20 without circuit modifications?

A: Yes. The IRFR4620TRLPBF is electrically and mechanically compatible with the STD20NF20. Its higher current rating (24A) and lower on-resistance (78 mOhm) provide improved performance margins without requiring circuit modifications. The identical DPAK package ensures direct PCB compatibility.

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