STD13N60DM2 Equivalent & Substitute Parts

Part Overview

The STD13N60DM2 is an N-Channel 600V 11A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM2 series. This surface mount device is housed in a DPAK (TO-252-3) package and is designed for high-voltage switching applications requiring continuous drain current capability at elevated temperatures. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for applications where the STD13N60DM2 specifications are met by alternative manufacturers' offerings.

Substiute Parts

STD13N60DM2

STMicroelectronicsIn Stock: 35347STD13N60DM2 Datasheet

Current PartRFQ

IPD60R380P6ATMA1

Infineon TechnologiesIn Stock: 20181IPD60R380P6ATMA1 Datasheet

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R6013VND3TL1

Rohm SemiconductorIn Stock: 3210R6013VND3TL1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STD13N60DM2 is determined by strict equivalence across the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 600V to ensure compatibility with the application's voltage stress requirements.

Package Type: All substitute parts must use the TO-252-3 DPAK surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management designs.

FET Technology: All substitute parts must be N-Channel MOSFETs to maintain circuit polarity and gate drive compatibility.

Continuous Drain Current: Substitute parts must meet or exceed the 11A continuous drain current specification at 25°C to ensure adequate current handling capacity.

Gate Charge and Drive Characteristics: Substitute parts must operate within compatible gate charge specifications and drive voltage ranges to ensure proper gate driver integration.

Compliance and Certifications: All substitute parts must maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1) to meet regulatory and manufacturing requirements.

The identified substitute parts—IPD60R380P6ATMA1 (Infineon Technologies) and R6013VND3TL1 (Rohm Semiconductor)—satisfy these substitution criteria while offering alternative sourcing options from established semiconductor manufacturers.

Parameter Comparison

Engineering Selection Recommendations

STD13N60DM2 (Primary Part): This part is the baseline reference and remains the preferred choice for new designs when availability and cost are not constraints. It is Active in product status with full RoHS3 compliance and established supply chain presence (35,300 pcs in stock).

IPD60R380P6ATMA1 (Infineon CoolMOS™ P6): This substitute is suitable for applications where the continuous drain current requirement can be met at 10.6A instead of 11A. The part maintains identical 600V voltage rating, 10V drive voltage, and 19nC gate charge specification. Power dissipation is lower at 83W, which may reduce thermal management requirements in some designs. RoHS3 compliance is confirmed. This part is recommended when Infineon supply chain preference or cost optimization is a design criterion. Inventory availability is 20,100 pcs.

R6013VND3TL1 (Rohm PRESTOMOS): This substitute offers the highest continuous drain current at 13A, exceeding the STD13N60DM2 specification by 18%. Power dissipation is highest at 131W. The part supports dual drive voltage options (10V and 15V) and features lower Rds On at 300mOhm when driven at 15V. Gate charge is marginally higher at 21nC. This part is recommended for applications requiring higher current margin or when Rohm supply chain preference is established. RoHS3 compliance status is not specified in provided data. Inventory availability is 3,177 pcs.

All three parts maintain identical operating temperature range (-55 to 150°C), surface mount DPAK packaging, and unlimited moisture sensitivity rating. Selection between substitutes is based on current requirements, power dissipation tolerance, drive voltage compatibility, and supply chain strategy.

Frequently Asked Questions (FAQ)

Q: Can the IPD60R380P6ATMA1 be used as a direct replacement for the STD13N60DM2?

A: The IPD60R380P6ATMA1 is a functional equivalent for applications where continuous drain current of 10.6A meets design requirements. The 600V voltage rating, 10V drive voltage, 19nC gate charge, and DPAK package are identical. However, the 0.4A reduction in continuous current rating must be evaluated against application load requirements. Both parts are Active, RoHS3 compliant, and have unlimited MSL rating.

Q: What are the key differences between the R6013VND3TL1 and the STD13N60DM2?

A: The R6013VND3TL1 provides higher continuous drain current (13A vs. 11A) and lower on-resistance at 15V drive (300mOhm vs. 365mOhm at 10V). Power dissipation is higher at 131W. The part supports dual drive voltages (10V and 15V) compared to the STD13N60DM2's single 10V specification. Both maintain 600V voltage rating, identical operating temperature range, and DPAK packaging. RoHS3 compliance is confirmed for the STD13N60DM2 but not specified for the R6013VND3TL1 in provided data.

Q: Are all substitute parts compatible with existing PCB layouts designed for the STD13N60DM2?

A: Yes. All substitute parts use the TO-252-3 DPAK surface mount package, which ensures mechanical and thermal compatibility with PCB layouts designed for the STD13N60DM2. Pin configuration and thermal tab placement are identical across all three parts.

Q: What is the impact of higher input capacitance in substitute parts?

A: The IPD60R380P6ATMA1 has 877pF input capacitance and the R6013VND3TL1 has 900pF, compared to 730pF in the STD13N60DM2. Higher input capacitance increases gate charge switching time and may require gate driver output impedance adjustment. Gate charge values (19nC for Infineon, 21nC for Rohm) are comparable to the STD13N60DM2 (19nC), indicating acceptable gate drive compatibility for most applications.

Q: Which substitute part is recommended for high-temperature applications?

A: All three parts maintain identical operating temperature range of -55 to 150°C (TJ). Selection based on temperature performance alone is not differentiated. However, the R6013VND3TL1's higher power dissipation rating (131W) may provide additional thermal margin in applications approaching maximum junction temperature limits.

Q: What compliance certifications are confirmed for all substitute parts?

A: All three parts maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). The STD13N60DM2 and IPD60R380P6ATMA1 have confirmed RoHS3 status. RoHS3 compliance for the R6013VND3TL1 is not specified in provided data and must be verified through Rohm documentation if regulatory compliance is a design requirement.

Q: Can gate driver circuits designed for the STD13N60DM2 be used with substitute parts without modification?

A: Gate driver compatibility is determined by gate charge (Qg) and maximum gate voltage (Vgs Max) specifications. The STD13N60DM2 (19nC @ 10V, ±25V max) and IPD60R380P6ATMA1 (19nC @ 10V, ±20V max) are directly compatible. The R6013VND3TL1 (21nC @ 10V, ±30V max) has slightly higher gate charge and wider voltage tolerance, requiring verification that gate driver output impedance and voltage swing remain within acceptable limits.