STBV32G-AP Equivalent & Substitute Parts

Part Overview

The STBV32G-AP is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 400 V collector-emitter breakdown voltage and 1.5 A maximum collector current. This device is packaged in TO-92AP through-hole configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Substiute Parts

STBV32G-AP

STMicroelectronicsIn Stock: 2419STBV32G-AP Datasheet

Current PartRFQ

PHD13003C,126

WeEn SemiconductorsIn Stock: 804PHD13003C,126 Datasheet

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PHD13003C,412

WeEn SemiconductorsIn Stock: 8228PHD13003C,412 Datasheet

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PHE13003C,126

WeEn SemiconductorsIn Stock: 2158PHE13003C,126 Datasheet

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PHE13003C,412

WeEn SemiconductorsIn Stock: 21008PHE13003C,412 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STBV32G-AP is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 1.5 A
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
• Operating Temperature (TJ): 150°C

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

All substitute parts listed meet these criteria. The substitute parts from WeEn Semiconductors (PHD13003C and PHE13003C series) are available in multiple packaging configurations (Tape & Box, Cut Tape, and Bulk) and maintain active product status, ensuring ongoing availability and supply chain reliability.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The STBV32G-AP is classified as obsolete. All substitute parts (PHD13003C,126; PHD13003C,412; PHE13003C,126; PHE13003C,412) maintain active product status from WeEn Semiconductors, ensuring continued availability and manufacturing support.

Compliance and Certification: All substitute parts are RoHS compliant and carry ROHS3 certification where applicable. The STBV32G-AP is ROHS3 compliant, and substitute parts PHD13003C,412 and PHE13003C,412 maintain ROHS3 compliance. All parts carry REACH Unaffected or REACH Compliant status and are classified under ECCN EAR99.

Packaging Configuration Selection: Substitute parts are available in three packaging configurations:

• Tape & Box (TB): PHD13003C,126 (751 Pcs inventory)
• Cut Tape (CT): PHE13003C,126 (2100 Pcs inventory)
• Bulk: PHD13003C,412 (8214 Pcs inventory) and PHE13003C,412 (20998 Pcs inventory)

Selection between PHD13 and PHE13 base product numbers and packaging configurations depends on procurement requirements and assembly process compatibility. All configurations provide electrical and mechanical equivalence to the STBV32G-AP.

Frequently Asked Questions (FAQ)

Q: Can PHD13003C and PHE13003C parts be used interchangeably with STBV32G-AP?

A: Yes. All four substitute part numbers (PHD13003C,126; PHD13003C,412; PHE13003C,126; PHE13003C,412) meet the electrical and mechanical equivalence criteria for the STBV32G-AP. They share identical ratings for collector-emitter breakdown voltage (400 V), maximum collector current (1.5 A), saturation voltage, and DC current gain specifications.

Q: What is the difference between PHD13003C and PHE13003C?

A: The primary difference is the base product number designation (PHD13 versus PHE13) assigned by WeEn Semiconductors. Both series maintain identical electrical specifications and TO-92-3 package configuration. Selection between these series depends on supplier availability and procurement preferences.

Q: How do packaging options (Tape & Box, Cut Tape, Bulk) affect substitution?

A: Packaging options do not affect electrical or mechanical compatibility. The choice between Tape & Box (TB), Cut Tape (CT), and Bulk packaging is determined by assembly process requirements, order quantity, and handling procedures. All packaging configurations deliver the same component with identical performance characteristics.

Q: Why do substitute parts have higher maximum power ratings (2.1 W vs. 1.5 W)?

A: The substitute parts from WeEn Semiconductors are rated for 2.1 W maximum power dissipation, compared to 1.5 W for the STBV32G-AP. This higher power rating provides additional thermal margin and does not affect substitution compatibility. The parts remain functionally equivalent for applications designed around the STBV32G-AP specifications.

Q: Are there compliance differences between substitute parts?

A: All substitute parts are RoHS compliant. PHD13003C,412 and PHE13003C,412 carry ROHS3 certification, matching the STBV32G-AP compliance level. PHD13003C,126 and PHE13003C,126 carry standard RoHS compliance. All parts are REACH Unaffected or REACH Compliant and classified under ECCN EAR99.

Q: What is the current-collector cutoff difference between the main part and substitutes?

A: The STBV32G-AP specifies a maximum collector cutoff current of 1 mA, while all substitute parts specify 100 µA. The lower cutoff current in substitute parts represents improved leakage characteristics and does not affect substitution compatibility for applications designed to the STBV32G-AP specification.