STB9NK80Z N-Channel 800V MOSFET Equivalent & Substitute Parts

Part Overview

The STB9NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-voltage switching applications requiring 800V drain-to-source voltage capability. This device operates in the SuperMESH™ series and is qualified to AEC-Q101 automotive standards. The part is currently in active production status with 2000 pieces available in inventory.

Equivalent and substitute parts are identified when circuit designs require alternative sourcing, inventory constraints occur, or when performance enhancements within the same electrical and mechanical specifications are beneficial. Substitute parts must maintain compatibility across critical parameters including voltage rating, current capacity, package type, and thermal characteristics.

Substiute Parts

STB9NK80Z

STMicroelectronicsIn Stock: 2012STB9NK80Z Datasheet

Current PartRFQ

IXFA7N80P

IXYSIn Stock: 2060IXFA7N80P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STB9NK80Z are identified based on strict electrical and mechanical compatibility criteria. The substitution logic is based on the following key parameters:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 800V
• Continuous Drain Current (Id) must meet or exceed 5.2A at 25°C
• On-State Resistance (Rds On) must not exceed 1.8 Ohm at specified conditions
• Gate Threshold Voltage (Vgs th) must be within acceptable switching range
• Maximum Gate Voltage (Vgs Max) must be ±30V or greater
• Operating Temperature Range must span -55°C to 150°C

Mechanical Compatibility Requirements:

• Package Type must be TO-263-3 or D2PAK (2 Leads + Tab) surface mount
• Mounting configuration must be surface mount compatible
• Lead configuration must match D2PAK pinout

Compliance Requirements:

• RoHS3 Compliant status required
• Moisture Sensitivity Level (MSL) of 1 (Unlimited) required
• REACH Unaffected status required

The IXFA7N80P from IXYS meets all substitution criteria and is classified as an equivalent substitute part.

Parameter Comparison

Engineering Selection Recommendations

STB9NK80Z Selection Criteria: The STB9NK80Z is the primary component choice when STMicroelectronics sourcing is required or when the SuperMESH™ series technology is specified in design documentation. This part carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. The device is in active production with established supply chain availability.

IXFA7N80P Selection Criteria: The IXFA7N80P serves as an equivalent substitute when IXYS component sourcing is preferred or when supply constraints on the STB9NK80Z occur. This part offers enhanced electrical performance characteristics: 7A continuous drain current (versus 5.2A), lower on-state resistance of 1.44 Ohm (versus 1.8 Ohm), and higher power dissipation capability of 200W (versus 125W). The IXFA7N80P maintains identical voltage rating, temperature range, and package compatibility. Both parts are RoHS3 compliant, MSL 1, and REACH unaffected.

Substitution Compatibility: Both parts are mechanically and electrically interchangeable within the TO-263-3 D2PAK footprint. Pin configuration and lead spacing are identical. Both devices operate across the full -55°C to 150°C temperature range and maintain ±30V maximum gate voltage specification. The IXFA7N80P's superior current and power handling characteristics make it suitable for applications where the STB9NK80Z reaches thermal or current limits.

Frequently Asked Questions (FAQ)

Q: Can the IXFA7N80P directly replace the STB9NK80Z in existing PCB designs?

A: Yes. Both parts use identical TO-263-3 D2PAK package configuration with matching pinout and lead spacing. No PCB layout modifications are required for direct substitution.

Q: What are the key electrical differences between these parts?

A: The IXFA7N80P provides higher continuous drain current (7A versus 5.2A), lower on-state resistance (1.44 Ohm versus 1.8 Ohm), and greater power dissipation capability (200W versus 125W). Both maintain the same 800V voltage rating and ±30V gate voltage specification.

Q: Are both parts suitable for automotive applications?

A: The STB9NK80Z carries AEC-Q101 automotive qualification. The IXFA7N80P does not list automotive qualification in the provided specifications. For automotive-grade applications requiring AEC-Q101 certification, the STB9NK80Z is the specified choice.

Q: What is the difference in gate charge between these parts?

A: The STB9NK80Z has a maximum gate charge of 40 nC at 10V, while the IXFA7N80P has 32 nC at 10V. Lower gate charge in the IXFA7N80P results in faster switching characteristics.

Q: Do both parts have the same moisture sensitivity level?

A: Yes. Both the STB9NK80Z and IXFA7N80P are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are both parts RoHS3 compliant?

A: Yes. Both parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the input capacitance difference, and does it affect circuit design?

A: The STB9NK80Z has 1138 pF input capacitance at 25V, while the IXFA7N80P has 1890 pF. Higher input capacitance in the IXFA7N80P may require gate drive circuit adjustments for optimal switching performance in high-frequency applications.

Q: Can I use the IXFA7N80P in a design originally specified for the STB9NK80Z?

A: The IXFA7N80P meets or exceeds all critical electrical parameters of the STB9NK80Z and maintains package compatibility. However, verify that the enhanced performance characteristics (higher current, lower resistance, higher capacitance) do not introduce unintended circuit behavior. Gate drive circuits may require adjustment due to increased input capacitance.