STB9NK70Z-1 Equivalent & Substitute Parts

Part Overview

The STB9NK70Z-1 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 700V drain-to-source voltage with 7.5A continuous drain current at 25°C. The device is packaged in a Through Hole I2PAK (TO-262-3) configuration and is designed for high-voltage switching applications. The STB9NK70Z-1 operates across a temperature range of -55°C to 150°C and dissipates up to 115W at the case temperature.

The STB9NK70Z-1 is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support ongoing system maintenance, repair, and redesign efforts where component availability is limited or discontinued.

Substiute Parts

STB9NK70Z-1

STMicroelectronicsIn Stock: 1553STB9NK70Z-1 Datasheet

Current PartRFQ

STI11NM80

STMicroelectronicsIn Stock: 1158STI11NM80 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STB9NK70Z-1 are identified based on the following critical parameters that determine functional compatibility:

Mandatory Compatibility Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Through Hole
• Package Type: I2PAK (TO-262-3 Long Leads)
• Drain to Source Voltage (Vdss): Equal to or greater than 700V
• Continuous Drain Current (Id): Equal to or greater than 7.5A at 25°C
• Operating Temperature Range: Must encompass or exceed -55°C to 150°C
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Electrical Performance Parameters:

• On-State Resistance (Rds On)
• Gate Threshold Voltage (Vgs(th))
• Gate Charge (Qg)
• Power Dissipation capability
• Input Capacitance (Ciss)

Substitute parts must meet or exceed the electrical specifications of the STB9NK70Z-1 to ensure direct replacement capability in existing circuit designs without circuit modification.

Parameter Comparison

Engineering Selection Recommendations

STI11NM80 as Direct Substitute:

The STI11NM80 is a direct substitute for the STB9NK70Z-1 based on the following engineering criteria:

Compliance and Status:

• Both devices are manufactured by STMicroelectronics
• Both are ROHS3 Compliant
• Both have Moisture Sensitivity Level 1 (Unlimited)
• The STI11NM80 is Active product status, ensuring long-term availability and supply chain continuity

Electrical Compatibility:

• The STI11NM80 exceeds the Vdss requirement (800V vs. 700V), providing enhanced voltage margin
• The STI11NM80 exceeds the continuous drain current requirement (11A vs. 7.5A), providing enhanced current capacity
• The STI11NM80 provides superior on-state resistance performance (0.4 Ohm vs. 1.2 Ohm), resulting in lower conduction losses
• The STI11NM80 provides lower gate charge (43.6 nC vs. 68 nC), enabling faster switching transitions
• The STI11NM80 provides higher power dissipation capability (150W vs. 115W)

Thermal and Environmental Compatibility:

• The STI11NM80 operating temperature range (-65°C to 150°C) encompasses the STB9NK70Z-1 range (-55°C to 150°C)

Mechanical Compatibility:

• Both devices use identical Through Hole mounting type
• Both devices use I2PAK (TO-262-3) package configuration with long leads
• Pin-to-pin compatibility is maintained

The STI11NM80 is suitable for direct replacement in applications currently using the STB9NK70Z-1 without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the STI11NM80 be used as a direct replacement for the STB9NK70Z-1 in existing circuit designs?

A: Yes. The STI11NM80 meets all mandatory compatibility criteria including FET type (N-Channel), technology (MOSFET), mounting type (Through Hole), and package type (I2PAK TO-262-3). Electrical specifications of the STI11NM80 meet or exceed those of the STB9NK70Z-1, enabling direct substitution without circuit modification.

Q: What are the key electrical advantages of the STI11NM80 over the STB9NK70Z-1?

A: The STI11NM80 provides three primary electrical advantages: (1) lower on-state resistance (0.4 Ohm vs. 1.2 Ohm) reducing conduction losses, (2) lower gate charge (43.6 nC vs. 68 nC) enabling faster switching, and (3) higher continuous drain current rating (11A vs. 7.5A) and power dissipation capability (150W vs. 115W).

Q: Are the package dimensions and pin configurations identical between the STB9NK70Z-1 and STI11NM80?

A: Both devices use the I2PAK (TO-262-3) Through Hole package with long leads. Pin-to-pin compatibility is maintained, allowing direct PCB mounting without modification.

Q: What is the significance of the STB9NK70Z-1 being classified as obsolete?

A: Obsolete product status indicates the STB9NK70Z-1 is no longer manufactured and will not be restocked. The STI11NM80 is an Active product with ongoing manufacturing and supply chain support, making it the appropriate choice for new designs and long-term system support.

Q: Do both devices meet the same compliance standards?

A: Yes. Both the STB9NK70Z-1 and STI11NM80 are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited). Both devices are REACH Unaffected and classified under ECCN EAR99.

Q: What is the operating temperature range difference between the two devices?

A: The STI11NM80 operating temperature range (-65°C to 150°C) extends 10°C lower than the STB9NK70Z-1 (-55°C to 150°C). This provides enhanced cold-temperature performance while maintaining identical upper temperature limits.

Q: Are there any circuit design considerations when substituting the STI11NM80 for the STB9NK70Z-1?

A: No circuit modification is required. The lower on-state resistance and gate charge of the STI11NM80 may result in reduced power dissipation and faster switching response compared to the STB9NK70Z-1, both of which are beneficial performance improvements in existing circuit designs.