STB85NS04Z Equivalent & Substitute Parts

Part Overview

The STB85NS04Z is an N-Channel MOSFET manufactured by STMicroelectronics in the SAFeFET™ series, rated for 33V drain-to-source voltage and 80A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 215W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Substiute Parts

STB85NS04Z

STMicroelectronicsIn Stock: 1010STB85NS04Z Datasheet

Current PartRFQ

STB170NF04

STMicroelectronicsIn Stock: 26308STB170NF04 Datasheet

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PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

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PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STB85NS04Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel MOSFET technology
• Drain to Source Voltage (Vdss): Minimum 33V rating required
• Continuous Drain Current (Id): Minimum 80A at 25°C
• Package / Case: D2PAK (TO-263-3) surface mount form factor
• Operating Temperature Range: -55°C to 175°C minimum
• RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Parameters:

• Gate Charge (Qg): Lower values preferred for reduced switching losses
• On-Resistance (Rds On): Lower values preferred for reduced conduction losses
• Power Dissipation: Higher ratings provide design margin

The substitute parts listed below meet or exceed the primary criteria, ensuring functional and mechanical compatibility with the STB85NS04Z in existing circuit designs.

Parameter Comparison

Engineering Selection Recommendations

STB170NF04 (STMicroelectronics)

The STB170NF04 is an active product offering superior electrical performance with 40V Vdss rating, matching the 80A continuous drain current specification. This part delivers lower on-resistance (5 mOhm vs. 15 mOhm) and higher power dissipation capability (300W vs. 215W), providing enhanced thermal margin. The higher gate charge (170 nC) represents the only performance trade-off. Both parts share identical D2PAK packaging, operating temperature range, and RoHS3 compliance. The STB170NF04 is the preferred primary substitute due to active product status and superior thermal performance.

PSMN4R3-30BL,118 (Nexperia USA Inc.)

The PSMN4R3-30BL,118 is an active product rated for 30V Vdss and 100A continuous drain current, exceeding the 80A requirement. This part exhibits the lowest on-resistance (4.1 mOhm) and lowest gate charge (41.5 nC) among all substitutes, resulting in superior switching efficiency and reduced power dissipation. The 30V Vdss rating is acceptable for applications where the 33V margin is not critical. D2PAK packaging and RoHS3 compliance are maintained. This part is suitable for designs prioritizing efficiency and thermal performance.

PSMN017-30BL,118 (Nexperia USA Inc.)

The PSMN017-30BL,118 is an obsolete product rated for 30V Vdss and 32A continuous drain current. This part does not meet the 80A continuous drain current requirement and is unsuitable as a direct substitute. The lower current rating and reduced power dissipation (47W) restrict its application to lower-power circuit variants only. This part is listed for reference only and should not be selected for designs requiring full 80A capability.

Frequently Asked Questions (FAQ)

Q: Can the STB85NS04Z be directly replaced with the STB170NF04?

A: Yes. Both parts are N-Channel MOSFETs in D2PAK packaging with identical 80A continuous drain current ratings and -55°C to 175°C operating temperature ranges. The STB170NF04 provides higher voltage rating (40V vs. 33V) and superior thermal performance (300W vs. 215W). Electrical compatibility is confirmed across all critical parameters.

Q: What is the primary advantage of the PSMN4R3-30BL,118 over the STB85NS04Z?

A: The PSMN4R3-30BL,118 offers significantly lower on-resistance (4.1 mOhm vs. 15 mOhm) and lower gate charge (41.5 nC vs. 100 nC), resulting in reduced conduction losses and faster switching characteristics. The 100A continuous drain current rating exceeds the 80A requirement. These improvements reduce thermal stress and power dissipation in the circuit.

Q: Why is the PSMN017-30BL,118 not recommended as a substitute?

A: The PSMN017-30BL,118 is rated for only 32A continuous drain current, which falls significantly below the 80A requirement of the STB85NS04Z. This part cannot deliver the required current capacity and is unsuitable for direct substitution in designs requiring full 80A operation.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed (STB170NF04, PSMN4R3-30BL,118, and PSMN017-30BL,118) are packaged in TO-263-3 D2PAK form factor, ensuring mechanical compatibility with existing PCB layouts and assembly processes.

Q: Do the substitute parts maintain RoHS3 compliance?

A: Yes. All substitute parts are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited), matching the compliance profile of the STB85NS04Z. REACH status is unaffected for all parts.

Q: What is the voltage derating consideration when using PSMN4R3-30BL,118 in place of STB85NS04Z?

A: The PSMN4R3-30BL,118 is rated for 30V Vdss compared to the STB85NS04Z 33V rating. Applications operating at voltages below 30V experience no derating. Designs requiring the full 33V margin should select the STB170NF04 (40V rating) instead.

Q: Which substitute part offers the best thermal performance?

A: The STB170NF04 provides the highest power dissipation rating (300W vs. 215W for the original part), offering superior thermal margin. The PSMN4R3-30BL,118 offers the lowest on-resistance, reducing conduction losses and heat generation during operation.