STB76NF80 N-Channel MOSFET 80V 80A D2PAK Equivalent & Substitute Parts

Part Overview

The STB76NF80 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This device features an 80V drain-to-source voltage rating with 80A continuous drain current capability in a D2PAK surface mount package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within system designs.

Substitute parts are required for new designs, production continuity, and long-term supply chain reliability. The following components provide electrical and mechanical compatibility based on matching critical parameters: drain-to-source voltage, continuous drain current, package type, and operating temperature range.

Key Parameters

Parameter	STB76NF80	Unit
Drain to Source Voltage (Vdss)	80	V
Current - Continuous Drain (Id) @ 25°C	80	A (Tc)
Rds On (Max) @ Id, Vgs	11	mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs	160	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	D2PAK
Package / Case	TO-263-3	D2PAK (2 Leads + Tab)
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the STB76NF80 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-source voltage (Vdss) must equal or exceed 80V
Continuous drain current (Id) must equal or exceed 80A at 25°C
Gate-source voltage (Vgs) maximum must be ±20V
Operating temperature range must encompass -55°C to 175°C
On-state resistance (Rds On) characteristics must be compatible with circuit requirements

Mechanical Compatibility Criteria:

Package type must be D2PAK (TO-263-3) surface mount
Lead configuration must be 2 Leads + Tab
Mounting type must be surface mount

Regulatory Compliance:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited)
REACH Unaffected status

Substitute parts are grouped into two categories: direct functional equivalents (matching Vdss and Id specifications) and similar alternatives (meeting minimum electrical requirements with acceptable parameter variations).

Parameter Comparison

Parameter	STB76NF80	STB80NF10T4	IPB054N08N3GATMA1	IPB067N08N3GATMA1	PSMN012-80BS,118	PSMN017-80BS,118	PSMN8R7-80BS,118	AOB288L	Unit
Vdss	80	100	80	80	80	80	80	80	V
Id @ 25°C	80	80	80	80	74	50	90	46 (Tc)	A
Rds On (Max) @ 10V	11	15	5.4	6.7	11	17	8.7	8.9	mOhm
Gate Charge (Qg) @ 10V	160	182	69	56	43	26	52	38	nC
Power Dissipation (Max)	300	300	150	136	148	103	170	93.5 (Tc)	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	TO-263-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	-

Engineering Selection Recommendations

Direct Functional Equivalents (Recommended Primary Substitutes):

STB80NF10T4 (STMicroelectronics) - Active product status. Maintains 80A continuous drain current with identical D2PAK package and operating temperature range. Vdss increased to 100V provides enhanced voltage margin. Rds On increased to 15mOhm at 40A, 10V. Gate charge increased to 182nC. Power dissipation maintained at 300W. RoHS3 compliant with MSL 1. Suitable for direct replacement in applications where higher voltage rating is acceptable.

IPB054N08N3GATMA1 (Infineon Technologies OptiMOS™ series) - Active product status. Matches 80V/80A specifications with superior Rds On of 5.4mOhm at 80A, 10V. Gate charge reduced to 69nC. Power dissipation rated at 150W. RoHS3 compliant with MSL 1. Recommended for applications prioritizing efficiency and thermal performance.

IPB067N08N3GATMA1 (Infineon Technologies OptiMOS™ series) - Active product status. Matches 80V/80A specifications with Rds On of 6.7mOhm at 73A, 10V. Gate charge reduced to 56nC. Power dissipation rated at 136W. RoHS3 compliant with MSL 1. Suitable for applications requiring lower gate charge and reduced switching losses.

Alternative Substitutes (Current Capability Variations):

PSMN8R7-80BS,118 (Nexperia) - Active product status. Provides 90A continuous drain current, exceeding original 80A specification. Rds On of 8.7mOhm at 10A. Gate charge 52nC. Power dissipation 170W. RoHS3 compliant with MSL 1. Applicable for designs requiring increased current headroom.

PSMN012-80BS,118 (Nexperia) - Active product status. Provides 74A continuous drain current, slightly below original specification. Rds On of 11mOhm at 15A, 10V matches original device. Gate charge 43nC. Power dissipation 148W. RoHS3 compliant with MSL 1. Suitable for applications with reduced current requirements.

PSMN017-80BS,118 (Nexperia) - Active product status. Provides 50A continuous drain current for lower-current applications. Rds On of 17mOhm at 10A, 10V. Gate charge 26nC. Power dissipation 103W. RoHS3 compliant with MSL 1. Applicable for reduced power designs.

AOB288L (Alpha & Omega Semiconductor) - Active product status. Provides 46A continuous drain current (Tc) with 80V rating. Rds On of 8.9mOhm at 20A, 10V. Gate charge 38nC. Power dissipation 93.5W (Tc). RoHS3 compliant with MSL 1. Suitable for lower-current applications with thermal constraints.

All substitute parts maintain RoHS3 compliance, MSL 1 rating, and REACH Unaffected status. All operate across the -55°C to 175°C temperature range. All are packaged in D2PAK (TO-263-3) surface mount configuration with identical lead configuration.

Frequently Asked Questions (FAQ)

Q: Can STB80NF10T4 directly replace STB76NF80 in existing designs?

A: STB80NF10T4 is a direct functional substitute with identical 80A continuous drain current and D2PAK package. The increased Vdss rating (100V vs. 80V) provides enhanced voltage margin and is compatible with circuits designed for 80V operation. Rds On increases from 11mOhm to 15mOhm, resulting in slightly higher conduction losses. Gate charge increases from 160nC to 182nC, affecting switching speed. Verification of thermal performance is necessary if power dissipation is critical.

Q: What is the primary difference between Infineon OptiMOS™ devices and the original STB76NF80?

A: IPB054N08N3GATMA1 and IPB067N08N3GATMA1 maintain identical 80V/80A electrical specifications but feature significantly lower on-state resistance (5.4mOhm and 6.7mOhm respectively versus 11mOhm). Gate charge is substantially reduced (69nC and 56nC versus 160nC), enabling faster switching transitions. Power dissipation ratings are lower (150W and 136W versus 300W), reflecting improved efficiency. These devices are suitable for applications where switching losses and thermal management are optimization priorities.

Q: Are all substitute parts available in the same D2PAK package?

A: All listed substitute parts are packaged in D2PAK (TO-263-3) surface mount configuration with 2 leads plus tab. Physical dimensions and PCB footprints are identical. Lead spacing and mounting requirements are compatible across all alternatives.

Q: Which substitute part provides the closest electrical match to STB76NF80?

A: PSMN012-80BS,118 provides the closest match with identical 80V rating and matching 11mOhm Rds On specification at 10V. Continuous drain current is 74A, slightly below the original 80A. This part is recommended for applications where on-state resistance characteristics are critical to circuit performance.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (26nC to 69nC in substitutes versus 160nC in original) reduces switching losses and enables faster switching transitions. Higher gate charge (182nC in STB80NF10T4) increases switching energy requirements. Selection depends on gate driver capability and switching frequency requirements.

Q: Can lower-current alternatives such as PSMN017-80BS,118 (50A) be used in place of STB76NF80 (80A)?

A: PSMN017-80BS,118 is suitable only for applications where continuous drain current requirements do not exceed 50A. Using this part in circuits designed for 80A operation results in device thermal stress and potential failure. Current capability must be verified against actual circuit requirements before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant with Moisture Sensitivity Level 1 (Unlimited) and REACH Unaffected status. Regulatory compliance is maintained across all alternatives.

Q: What thermal considerations apply when substituting with lower power dissipation devices?

A: IPB054N08N3GATMA1, IPB067N08N3GATMA1, PSMN012-80BS,118, PSMN017-80BS,118, and AOB288L have lower maximum power dissipation ratings (93.5W to 170W) compared to the original STB76NF80 (300W). These devices are suitable for applications where thermal management is less demanding. In high-power applications, thermal performance must be evaluated based on actual circuit operating conditions and heat dissipation requirements.

Q: How does the increased Vdss of STB80NF10T4 (100V vs. 80V) affect circuit operation?

A: Increased Vdss rating provides enhanced voltage margin and protection against transient overvoltage conditions. Circuits designed for 80V operation function correctly with a 100V-rated device. The higher voltage rating does not negatively impact performance in 80V applications. This characteristic makes STB80NF10T4 suitable for designs requiring additional voltage headroom or operating in environments with voltage transients.

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