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STB75NF75T4 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The STB75NF75T4 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This device operates at 75V drain-to-source voltage with 80A continuous drain current and 300W maximum power dissipation in a D2PAK surface mount package. The part is currently in Active product status with 43,400 units in stock.
Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters: drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), gate threshold voltage (Vgs(th)), and compatible surface mount packaging. Substitutes are necessary when the primary part becomes unavailable, when design requirements allow for alternative performance characteristics, or when supply chain optimization is required.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 80 | A (Tc) |
| On-State Resistance (Rds On) @ 40A, 10V | 11 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 160 | nC |
| Maximum Gate Voltage (Vgs) | ±20 | V |
| Input Capacitance (Ciss) @ 25V | 3700 | pF |
| Power Dissipation (Max) | 300 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | Surface Mount |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts are classified into three categories based on electrical and mechanical compatibility with the STB75NF75T4:
Parametric Equivalents: Parts with identical or near-identical electrical specifications and the same D2PAK package. These parts are direct functional replacements with no design modifications required.
Direct Manufacturers: Parts from alternative manufacturers (Infineon Technologies, onsemi) that meet or exceed the critical electrical parameters: 75V Vdss, 80A Id capability, compatible Rds On performance, and D2PAK surface mount packaging. These parts maintain full electrical compatibility.
Similar Alternatives: Parts with comparable but not identical specifications, including variations in Vdss (55V or 75V), Id (75A or 120A), Rds On characteristics, or power dissipation. These parts are suitable for applications where the design allows for parameter flexibility within the specified ranges.
Critical substitution parameters:
- Drain-to-Source Voltage (Vdss): Must be ≥75V for direct substitution
- Continuous Drain Current (Id): Must be ≥80A for direct substitution
- On-State Resistance (Rds On): Lower values indicate improved performance; values between 4.5mOhm and 12mOhm are acceptable
- Package Type: D2PAK (TO-263-3) surface mount required for mechanical compatibility
- Operating Temperature: Must support -55°C to 175°C range
- RoHS3 Compliance: Required for regulatory compatibility
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Pd Max (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|
| STB75NF75T4 | STMicroelectronics | 75 | 80 | 11 @ 40A, 10V | 4 @ 250µA | 160 @ 10V | 3700 @ 25V | 300 | D2PAK | Active |
| STB76NF75 | STMicroelectronics | 75 | 80 | 11 @ 40A, 10V | 4 @ 250µA | 160 @ 10V | 3700 @ 25V | 300 | TO-263 | Active |
| IPB80N08S207ATMA1 | Infineon Technologies | 75 | 80 | 7.1 @ 80A, 10V | 4 @ 250µA | 180 @ 10V | 4700 @ 25V | 300 | TO-263-3 | Active |
| IPB80N08S2L07ATMA1 | Infineon Technologies | 75 | 80 | 6.8 @ 80A, 10V | 2 @ 250µA | 233 @ 10V | 5400 @ 25V | 300 | TO-263-3 | Last Time Buy |
| BUK7610-55AL,118 | Nexperia USA Inc. | 55 | 75 | 10 @ 25A, 10V | 4 @ 1mA | 124 @ 10V | 6280 @ 25V | 300 | D2PAK | Obsolete |
| BUK9606-75B,118 | Nexperia USA Inc. | 75 | 75 | 5.5 @ 25A, 10V | 2 @ 1mA | 95 @ 5V | 11693 @ 25V | 300 | D2PAK | Active |
| BUK9609-75A,118 | NXP USA Inc. | 75 | 75 | 8.5 @ 25A, 10V | 2 @ 1mA | — | 8840 @ 25V | 230 | D2PAK | Active |
| FDB045AN08A0 | onsemi | 75 | 90 | 4.5 @ 80A, 10V | 4 @ 250µA | 138 @ 10V | 6600 @ 25V | 310 | TO-263 | Active |
| FDB088N08 | onsemi | 75 | 120 | 8.8 @ 75A, 10V | 4 @ 250µA | 118 @ 10V | 6595 @ 25V | 160 | TO-263 | Active |
| IPB049NE7N3GATMA1 | Infineon Technologies | 75 | 80 | 4.9 @ 80A, 10V | 3.8 @ 91µA | 68 @ 10V | 4750 @ 37.5V | 150 | TO-263-3 | Obsolete |
| IRF1010ESTRLPBF | Infineon Technologies | 60 | 84 | 12 @ 50A, 10V | 4 @ 250µA | 130 @ 10V | 3210 @ 25V | 200 | D2PAK | Active |
Engineering Selection Recommendations
Direct Parametric Equivalent: STB76NF75 (STMicroelectronics) is the primary parametric equivalent with identical electrical specifications and D2PAK packaging. This part maintains full compatibility with the STB75NF75T4 and is recommended as the first alternative when the primary part is unavailable. Both parts are Active status and ROHS3 compliant.
Recommended Direct Substitutes (Active Status): IPB80N08S207ATMA1 (Infineon Technologies) meets all critical electrical requirements with 75V Vdss, 80A Id, and 300W power dissipation. This part offers improved on-state resistance (7.1mOhm vs. 11mOhm), resulting in lower power losses. The part is Active status, ROHS3 compliant, and available in TO-263-3 packaging.
FDB045AN08A0 (onsemi) exceeds the primary part specifications with 90A continuous drain current and superior on-state resistance (4.5mOhm). Power dissipation is 310W, providing additional thermal margin. This part is Active status and ROHS3 compliant.
Alternative Substitutes with Parameter Variations: BUK9606-75B,118 (Nexperia USA Inc.) provides 75V Vdss with 75A Id and excellent on-state resistance (5.5mOhm). This part is suitable for applications where the 5A reduction in continuous current is acceptable. The part is Active status, AEC-Q101 qualified for automotive applications, and ROHS3 compliant.
Parts Not Recommended for Direct Substitution: IPB80N08S2L07ATMA1 is designated Last Time Buy status, indicating end-of-life production. While electrically compatible, this part should not be selected for new designs.
IPB049NE7N3GATMA1 is Obsolete status and should not be used for new applications.
BUK7610-55AL,118 is Obsolete status with reduced Vdss (55V vs. 75V) and lower Id (75A vs. 80A), making it unsuitable for direct substitution.
IRF1010ESTRLPBF has reduced Vdss (60V vs. 75V) and lower power dissipation (200W vs. 300W), limiting its applicability to designs with lower voltage requirements.
BUK9609-75A,118 has reduced power dissipation (230W vs. 300W) and lower maximum gate voltage (±10V vs. ±20V), which may limit circuit design flexibility.
FDB088N08 has significantly reduced power dissipation (160W vs. 300W) despite higher current capability, making it unsuitable for high-power applications.
Frequently Asked Questions (FAQ)
Q: Can STB76NF75 be used as a direct replacement for STB75NF75T4? A: Yes. STB76NF75 is a parametric equivalent with identical electrical specifications (75V Vdss, 80A Id, 11mOhm Rds On, 300W Pd) and D2PAK packaging. Both parts are Active status and ROHS3 compliant. No circuit modifications are required.
Q: What is the difference between the STB75NF75T4 and IPB80N08S207ATMA1? A: Both parts meet the core electrical requirements (75V Vdss, 80A Id, 300W Pd, D2PAK packaging). The IPB80N08S207ATMA1 offers superior on-state resistance (7.1mOhm vs. 11mOhm), resulting in lower power dissipation during operation. The IPB80N08S207ATMA1 has slightly higher gate charge (180nC vs. 160nC) and input capacitance (4700pF vs. 3700pF). Both are Active status and ROHS3 compliant.
Q: Is FDB045AN08A0 a suitable substitute? A: Yes, for applications where the design allows for improved performance. FDB045AN08A0 exceeds the STB75NF75T4 specifications with 90A continuous drain current (vs. 80A) and superior on-state resistance (4.5mOhm vs. 11mOhm). Power dissipation is 310W (vs. 300W), providing additional thermal margin. The part is Active status, ROHS3 compliant, and uses TO-263 D2PAK packaging. No circuit modifications are required.
Q: Can I use BUK9606-75B,118 as a substitute? A: BUK9606-75B,118 is suitable only if the design allows for reduced continuous drain current (75A vs. 80A). This part offers excellent on-state resistance (5.5mOhm) and is Active status with AEC-Q101 automotive qualification. The part is ROHS3 compliant and uses D2PAK packaging. Verify that the 5A current reduction does not exceed design margins before selection.
Q: Why is IPB80N08S2L07ATMA1 not recommended? A: IPB80N08S2L07ATMA1 is designated Last Time Buy status, indicating that the manufacturer has announced end-of-life production. While electrically compatible with 75V Vdss, 80A Id, and 300W Pd, this part should not be selected for new designs due to limited future availability.
Q: What does "Obsolete" status mean for BUK7610-55AL,118? A: Obsolete status indicates that the manufacturer has discontinued production and support for this part. BUK7610-55AL,118 should not be used for new designs. Additionally, this part has reduced specifications (55V Vdss vs. 75V, 75A Id vs. 80A) compared to the STB75NF75T4, making it unsuitable for direct substitution.
Q: Are all substitute parts ROHS3 compliant? A: All recommended substitute parts (STB76NF75, IPB80N08S207ATMA1, IPB80N08S2L07ATMA1, BUK9606-75B,118, BUK9609-75A,118, FDB045AN08A0, FDB088N08, IPB049NE7N3GATMA1, and IRF1010ESTRLPBF) are ROHS3 compliant. Verify compliance status for any parts not listed in this document.
Q: What is the significance of the D2PAK package designation? A: D2PAK (also designated TO-263-3) is a surface mount package with two leads plus a thermal tab. All substitute parts listed use D2PAK or TO-263 packaging, ensuring mechanical compatibility with the STB75NF75T4. The thermal tab provides improved heat dissipation for high-current applications.
Q: Can I substitute a part with lower on-state resistance (Rds On)? A: Yes. Lower on-state resistance reduces power dissipation and heat generation during operation, improving overall circuit efficiency. Parts such as FDB045AN08A0 (4.5mOhm) and IPB80N08S2L07ATMA1 (6.8mOhm) offer superior performance compared to the STB75NF75T4 (11mOhm). No circuit modifications are required; the lower resistance provides a performance benefit.
Q: What is the impact of higher gate charge (Qg) on circuit design? A: Gate charge affects the speed at which the MOSFET switches on and off. Higher gate charge (such as IPB80N08S2L07ATMA1 at 233nC vs. STB75NF75T4 at 160nC) requires more charge to be supplied by the gate driver circuit. Verify that the gate driver has sufficient current capability to support the higher gate charge without exceeding switching time requirements.
Q: Are automotive-qualified parts available? A: Yes. BUK9606-75B,118 and BUK9609-75A,118 are both AEC-Q101 qualified for automotive applications. These parts are suitable for designs requiring automotive-grade reliability and qualification. Both parts are Active status and ROHS3 compliant.
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