STB75NF20 N-Channel MOSFET 200V 75A D2PAK Equivalent & Substitute Parts

Part Overview

The STB75NF20 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ series. This device operates at 200V drain-to-source voltage with a continuous drain current rating of 75A at 25°C case temperature, housed in a D2PAK (TO-263-3) surface mount package. The part is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary device becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility demands evaluation of equivalent performance characteristics across different manufacturer technologies.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 37A, 10V	34	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	84	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-50 to 150	°C
Package Type	D2PAK (TO-263-3)	Surface Mount

Substitute Part Grouping Explanation

Substitution of N-Channel MOSFETs is determined by the following critical parameters:

Drain-to-Source Voltage (Vdss): The substitute must equal or exceed 200V to maintain voltage blocking capability.
Continuous Drain Current (Id): The substitute must support the required current level. Parts with lower Id ratings represent current-limited alternatives; parts with higher Id ratings provide design margin.
On-State Resistance (Rds On): Lower resistance values indicate improved efficiency and reduced power dissipation during conduction.
Package Compatibility: All substitutes must use D2PAK (TO-263-3) surface mount packaging to ensure mechanical and thermal interface compatibility.
Gate Drive Voltage: All parts operate with 10V drive voltage specification.
Operating Temperature Range: The substitute must support the application's thermal requirements.
Compliance Status: RoHS3 compliance and REACH status must be maintained.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Temp Range (°C)	Package
STB75NF20	STMicroelectronics	200	75	34 @ 37A	84 @ 10V	190	-50 to 150	D2PAK
IRFS4127TRLPBF	Infineon Technologies	200	72	22 @ 44A	150 @ 10V	375	-55 to 175	D2PAK
IXTA86N20T	IXYS	200	86	29 @ 500mA	90 @ 10V	480	-55 to 175	D2PAK
SUM65N20-30-E3	Vishay Siliconix	200	65	30 @ 30A	130 @ 10V	375	-55 to 175	D2PAK
IRFS4227TRLPBF	Infineon Technologies	200	62	26 @ 46A	98 @ 10V	330	-40 to 175	D2PAK
FDB2614	onsemi	200	62	27 @ 31A	99 @ 10V	260	-55 to 150	D2PAK
PSMN057-200B,118	Nexperia USA Inc.	200	39	57 @ 17A	96 @ 10V	250	-55 to 175	D2PAK
IPB320N20N3GATMA1	Infineon Technologies	200	34	32 @ 34A	29 @ 10V	136	-55 to 175	D2PAK

Engineering Selection Recommendations

Primary Substitutes (Equivalent Current Rating)

IRFS4127TRLPBF and IXTA86N20T are the most direct substitutes for the STB75NF20. Both devices maintain 200V Vdss rating and deliver comparable or superior continuous drain current (72A and 86A respectively). IRFS4127TRLPBF offers improved on-state resistance (22 mOhm) and extended power dissipation capability (375W), with operating temperature range extended to 175°C. IXTA86N20T provides the highest current rating (86A) and power dissipation (480W) among all substitutes, with superior thermal performance. Both parts are RoHS3 compliant and REACH unaffected.

Secondary Substitutes (Reduced Current Rating)

IRFS4227TRLPBF, FDB2614, and SUM65N20-30-E3 operate at reduced continuous drain current (62A, 62A, and 65A respectively) compared to the STB75NF20. These devices are suitable for applications where the full 75A rating is not required. IRFS4227TRLPBF and SUM65N20-30-E3 provide improved on-state resistance (26 mOhm and 30 mOhm) and higher power dissipation ratings (330W and 375W). FDB2614 offers the lowest on-state resistance among this group (27 mOhm) and maintains compatibility with the STB75NF20's operating temperature range (-55 to 150°C).

Current-Limited Substitutes

PSMN057-200B,118 and IPB320N20N3GATMA1 are current-limited alternatives with continuous drain ratings of 39A and 34A respectively. These devices are applicable only in designs where reduced current capacity is acceptable. IPB320N20N3GATMA1 features the lowest gate charge (29 nC) and minimal on-state resistance (32 mOhm), making it suitable for low-loss switching applications with reduced current requirements.

All substitute parts maintain RoHS3 compliance, MSL 1 rating, and D2PAK surface mount packaging compatibility with the original STB75NF20.

Frequently Asked Questions (FAQ)

Q: Can IRFS4127TRLPBF directly replace STB75NF20 in all applications?

A: IRFS4127TRLPBF is mechanically and electrically compatible with STB75NF20 in D2PAK package applications. The 72A continuous drain current rating is within 96% of the STB75NF20's 75A rating. The improved on-state resistance (22 mOhm versus 34 mOhm) results in lower power dissipation. Verification of thermal management and gate drive circuitry compatibility is required for specific applications.

Q: What is the difference between IXTA86N20T and IRFS4127TRLPBF?

A: Both devices operate at 200V Vdss and D2PAK packaging. IXTA86N20T provides higher continuous drain current (86A versus 72A) and superior power dissipation capability (480W versus 375W). IRFS4127TRLPBF offers lower on-state resistance (22 mOhm versus 29 mOhm). IXTA86N20T is packaged in Tube format while IRFS4127TRLPBF uses Cut Tape & Digi-Reel packaging.

Q: Is FDB2614 suitable for applications requiring 75A continuous current?

A: FDB2614 is rated for 62A continuous drain current, which is 17% below the STB75NF20's 75A specification. This device is suitable only for applications where the actual current requirement does not exceed 62A. The improved on-state resistance (27 mOhm) and higher power dissipation rating (260W) provide design margin within the reduced current envelope.

Q: Why does IPB320N20N3GATMA1 have significantly lower gate charge than other substitutes?

A: IPB320N20N3GATMA1 is rated for 34A continuous drain current, substantially lower than the STB75NF20's 75A rating. The reduced gate charge (29 nC versus 84 nC) reflects the smaller die size and lower capacitance associated with lower current-rated devices. This part is applicable only in designs where 34A current capacity is sufficient.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant. SUM65N20-30-E3 is classified as REACH Affected, while all other substitutes are REACH Unaffected. Compliance verification with specific application requirements is necessary.

Q: Can substitute parts with lower Rds On values reduce thermal management requirements?

A: Lower on-state resistance (Rds On) reduces conduction losses and heat generation during device operation. IRFS4127TRLPBF (22 mOhm) and IRFS4227TRLPBF (26 mOhm) generate less heat than STB75NF20 (34 mOhm) at equivalent current levels. However, thermal management design must account for the specific application's duty cycle, switching frequency, and ambient conditions.

Q: What is the significance of operating temperature range differences?

A: STB75NF20 operates from -50°C to 150°C, while most substitutes extend to 175°C. Extended temperature range provides design flexibility for applications with elevated ambient or junction temperature requirements. FDB2614 maintains the same upper temperature limit (150°C) as the original part. Application thermal analysis determines whether extended temperature capability is necessary.

Q: Is package compatibility guaranteed for all D2PAK-rated substitutes?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, ensuring mechanical compatibility with existing PCB layouts and thermal interface designs. Electrical pin assignments are identical across all listed substitutes. PCB footprint and thermal pad dimensions are standardized for D2PAK packaging.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message