STB6N65M2 Equivalent & Substitute Parts

Part Overview

The STB6N65M2 is an N-Channel 650V 4A MOSFET manufactured by STMicroelectronics in the MDmesh™ series, housed in a TO-263 (D2PAK) surface mount package. This device is rated for 60W power dissipation and operates across a temperature range of -55°C to 150°C. The STB6N65M2 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	4	A
Rds On (Max) @ 2A, 10V	1.35	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	9.8	nC
Power Dissipation (Max)	60	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263 (D2PAK)	Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the STB6N65M2 are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must operate at or above the 650V Vdss specification to ensure safe operation in the same circuit topology.

Current Handling: The substitute must support the continuous drain current requirement of 4A at 25°C or higher to maintain functional equivalence.

On-State Resistance (Rds On): The substitute's Rds On value must be comparable to ensure similar power dissipation characteristics and thermal performance.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements; substitutes with similar Qg values maintain circuit timing characteristics.

Package Compatibility: The substitute must use the same TO-263 (D2PAK) surface mount package to ensure mechanical and thermal interface compatibility.

Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C.

Compliance Standards: RoHS3 compliance and REACH unaffected status ensure regulatory alignment.

Parameter Comparison

Parameter	STB6N65M2 (Main Part)	IXFA7N80P (Substitute)	Unit
Manufacturer	STMicroelectronics	IXYS	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	650	800	V
Continuous Drain Current (Id) @ 25°C	4	7	A
Rds On (Max)	1.35 @ 2A, 10V	1.44 @ 3.5A, 10V	Ohm
Gate Threshold Voltage (Vgs(th))	4 @ 250µA	5 @ 1mA	V
Gate Charge (Qg) @ 10V	9.8	32	nC
Power Dissipation (Max)	60	200	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-263 (D2PAK)	TO-263AA (IXFA)	Surface Mount
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The IXFA7N80P qualifies as a substitute for the obsolete STB6N65M2 based on the following criteria:

Voltage Rating: The IXFA7N80P provides 800V Vdss, which exceeds the 650V requirement of the STB6N65M2, ensuring safe operation in equivalent circuit applications.

Current Capacity: The IXFA7N80P supports 7A continuous drain current, surpassing the 4A specification of the STB6N65M2, providing design margin.

On-State Resistance: The Rds On values are comparable (1.35Ohm vs. 1.44Ohm), maintaining similar conduction losses and thermal characteristics.

Package Compatibility: Both devices use TO-263 surface mount packages (D2PAK configuration), ensuring mechanical and thermal interface compatibility without PCB redesign.

Temperature Range: Both devices operate across -55°C to 150°C, supporting identical thermal operating windows.

Regulatory Compliance: The IXFA7N80P maintains RoHS3 compliance and REACH unaffected status, aligning with the STB6N65M2 compliance profile.

Product Status: The IXFA7N80P is classified as active, ensuring long-term availability and supply chain continuity compared to the obsolete STB6N65M2.

Frequently Asked Questions (FAQ)

Q: Can the IXFA7N80P directly replace the STB6N65M2 without circuit modifications?

A: The IXFA7N80P is mechanically and electrically compatible with the STB6N65M2 in TO-263 surface mount applications. Both devices share identical package footprints and operating temperature ranges. The higher voltage rating (800V vs. 650V) and current capacity (7A vs. 4A) of the IXFA7N80P provide design margin without requiring circuit topology changes.

Q: What is the significance of the gate charge difference between these parts?

A: The STB6N65M2 has a gate charge of 9.8nC while the IXFA7N80P has 32nC. Gate charge affects the switching speed and driver current requirements. The IXFA7N80P requires higher gate drive current due to its higher gate charge, which may necessitate verification of gate driver capability in the existing circuit.

Q: Are both devices RoHS3 compliant?

A: Yes, both the STB6N65M2 and IXFA7N80P are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and use.

Q: What is the difference between TO-263 (D2PAK) and TO-263AA (IXFA) packages?

A: Both designations refer to the same TO-263 surface mount package with three leads (two signal leads plus a tab for thermal connection). The package footprint and thermal interface are identical, ensuring direct PCB compatibility.

Q: Why is the IXFA7N80P rated for higher power dissipation than the STB6N65M2?

A: The IXFA7N80P is rated for 200W power dissipation compared to 60W for the STB6N65M2. This difference reflects the IXFA7N80P's higher current capacity and lower on-state resistance characteristics. In applications limited to the STB6N65M2's original 4A current specification, the actual power dissipation will remain within acceptable thermal limits.

Q: Is the IXFA7N80P suitable for applications requiring the exact 650V voltage rating?

A: The IXFA7N80P's 800V rating exceeds the 650V requirement, providing additional voltage margin. This higher rating is suitable for applications designed for 650V operation and does not introduce compatibility issues.

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