STB60NF10T4 N-Channel MOSFET 100V 80A Equivalent & Substitute Parts

Part Overview

The STB60NF10T4 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 80A continuous drain current in the D2PAK surface mount package. This device belongs to the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 40A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	104	nC
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the STB60NF10T4 is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V (exact match required)
Package Type: D2PAK / TO-263-3 surface mount (mechanical compatibility)
FET Type: N-Channel (functional requirement)
Technology: MOSFET Metal Oxide (operational principle)

Secondary Compatibility Criteria:

Continuous Drain Current (Id): Minimum 80A at 25°C (functional requirement for current handling)
On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
Gate Threshold Voltage (Vgs(th)): 4V nominal (gate drive compatibility)
Operating Temperature Range: -55°C to 175°C (environmental compatibility)
RoHS3 Compliance and MSL Level 1 (regulatory and handling compatibility)

Substitute parts are grouped into two categories based on current rating capability:

Category A - Full Current Replacement (≥80A): Parts rated for 80A or higher continuous drain current, suitable for direct replacement without derating.

Category B - Reduced Current Substitutes (55A–79A): Parts rated below 80A but above 50A, suitable for applications where current requirements can be met at reduced ratings or where thermal management allows operation below maximum specifications.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Status
STB60NF10T4	STMicroelectronics	100	80 (Tc)	23 @ 40A, 10V	104 @ 10V	300 (Tc)	D2PAK	Obsolete
BUK9620-100B,118	Nexperia USA Inc.	100	63 (Tc)	18.5 @ 25A, 10V	53.4 @ 5V	203 (Tc)	D2PAK	Active
IRF3710STRLPBF	Infineon Technologies	100	57 (Tc)	23 @ 28A, 10V	130 @ 10V	200 (Tc)	D2PAK	Active
IRF3710ZSTRLPBF	Infineon Technologies	100	59 (Tc)	18 @ 35A, 10V	120 @ 10V	160 (Tc)	D2PAK	Active
AUIRF3710ZSTRL	Infineon Technologies	100	59 (Tc)	18 @ 35A, 10V	120 @ 10V	160 (Tc)	PG-TO263-3	Active
FQB55N10TM	onsemi	100	55 (Tc)	26 @ 27.5A, 10V	98 @ 10V	155 (Tc)	D2PAK	Active
HUF75639S3ST	Fairchild Semiconductor	100	56 (Tc)	25 @ 56A, 10V	130 @ 20V	200 (Tc)	D2PAK	Active
BUK7626-100B,118	Nexperia USA Inc.	100	49 (Tc)	26 @ 25A, 10V	38 @ 10V	157 (Tc)	D2PAK	Obsolete
IRF1310NSTRLPBF	Infineon Technologies	100	42 (Tc)	36 @ 22A, 10V	110 @ 10V	160 (Tc)	D2PAK	Active
IRF540NSTRLPBF	Infineon Technologies	100	33 (Tc)	44 @ 16A, 10V	71 @ 10V	130 (Tc)	D2PAK	Active
FDB86102LZ	Fairchild Semiconductor	100	30 (Tc)	24 @ 8.3A, 10V	21 @ 10V	3.1 (Ta)	D2PAK	Active

Engineering Selection Recommendations

Primary Substitute Recommendation:

The BUK9620-100B,118 (Nexperia USA Inc.) is the preferred active substitute for the STB60NF10T4. This device maintains 100V Vdss rating, D2PAK package compatibility, and active product status with AEC-Q101 automotive qualification. While the continuous drain current is rated at 63A (compared to 80A), the lower on-state resistance (18.5 mOhm vs. 23 mOhm) and higher power dissipation capability (203W vs. 300W) provide thermal performance advantages. This part is suitable for applications where the 63A rating meets system requirements or where thermal management allows operation within specified limits.

Secondary Substitute Options:

IRF3710STRLPBF and IRF3710ZSTRLPBF (Infineon Technologies HEXFET® series) provide active alternatives with 100V Vdss and D2PAK packaging. The IRF3710ZSTRLPBF offers improved on-state resistance (18 mOhm) and is recommended where lower conduction losses are prioritized. Both devices maintain full operating temperature range compatibility (-55°C to 175°C).

FQB55N10TM (onsemi QFET® series) and HUF75639S3ST (Fairchild Semiconductor UltraFET™ series) are active alternatives rated at 55A and 56A respectively, suitable for applications where current requirements do not exceed these ratings.

Compliance Considerations:

All recommended active substitutes maintain RoHS3 compliance and MSL Level 1 (unlimited moisture sensitivity). The BUK9620-100B,118 carries AEC-Q101 automotive qualification, providing additional reliability assurance for automotive and industrial applications.

Obsolete Part Alternatives:

BUK7626-100B,118 (Nexperia USA Inc.) is also classified as obsolete and is not recommended for new designs despite AEC-Q101 qualification. This part should be considered only for field replacement of existing assemblies where design continuity is required.

Frequently Asked Questions (FAQ)

Q: Can the BUK9620-100B,118 directly replace the STB60NF10T4 in all applications?

A: The BUK9620-100B,118 is mechanically and electrically compatible in D2PAK package applications with 100V system voltage. However, the continuous drain current rating is 63A versus 80A. Direct replacement is suitable for applications where the 63A rating satisfies system current requirements. For applications requiring the full 80A capability, thermal analysis and current derating calculations are necessary.

Q: What is the significance of on-state resistance (Rds On) differences between substitute parts?

A: On-state resistance directly affects conduction losses and heat generation. Lower Rds On values reduce power dissipation at the same current level. The BUK9620-100B,118 (18.5 mOhm) and IRF3710ZSTRLPBF (18 mOhm) provide lower losses compared to the original STB60NF10T4 (23 mOhm), resulting in improved thermal performance and potentially reduced cooling requirements.

Q: Are all substitute parts rated for the same operating temperature range?

A: All recommended active substitutes maintain the -55°C to 175°C operating temperature range, ensuring compatibility with the original part's thermal specifications. FDB86102LZ is limited to -55°C to 150°C and is not recommended for applications requiring the full 175°C upper limit.

Q: What does AEC-Q101 qualification mean for automotive applications?

A: AEC-Q101 is an automotive electronics qualification standard. Parts carrying this qualification (such as BUK9620-100B,118 and BUK7626-100B,118) have undergone rigorous testing for reliability, temperature cycling, and stress conditions specific to automotive environments. This qualification is required for automotive-grade applications.

Q: Why is the STB60NF10T4 classified as obsolete?

A: Obsolete status indicates that the manufacturer has discontinued production and no longer supports the part. Active substitutes from current manufacturers ensure continued availability, technical support, and compliance with current regulatory standards.

Q: Can parts with lower current ratings (33A–49A) be used as substitutes?

A: Parts with significantly lower current ratings (IRF540NSTRLPBF at 33A, IRF1310NSTRLPBF at 42A, BUK7626-100B,118 at 49A) are not recommended as direct replacements for the 80A STB60NF10T4. These parts are suitable only for applications where system current requirements are substantially lower than the original design specification.

Q: What is the difference between D2PAK and PG-TO263-3 package designations?

A: D2PAK and PG-TO263-3 are equivalent package designations for the same physical form factor (TO-263-3 surface mount package with 2 leads plus tab). Both provide identical mechanical and thermal characteristics. AUIRF3710ZSTRL uses the PG-TO263-3 designation but is mechanically compatible with D2PAK footprints.

Q: How should gate charge (Qg) differences affect component selection?

A: Gate charge affects gate drive circuit requirements and switching speed. Higher Qg values (such as 130 nC in IRF3710STRLPBF) require more gate drive energy but may provide improved switching characteristics. Lower Qg values (such as 38 nC in BUK7626-100B,118) reduce gate drive requirements. Selection depends on existing gate drive circuit design and switching frequency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended active substitutes are RoHS3 compliant. This compliance ensures compatibility with current environmental regulations and procurement standards. The obsolete STB60NF10T4 is also RoHS3 compliant, but active substitutes provide assurance of continued regulatory compliance for new production.

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