STB3N62K3 Equivalent & Substitute Parts

Part Overview

The STB3N62K3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 620V drain-to-source voltage with 2.7A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-voltage switching applications. The STB3N62K3 is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	620	V
Continuous Drain Current (Id) @ 25°C	2.7	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	2.5	Ω @ 1.4A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 50µA
Gate Charge (Qg Max) @ Vgs	13	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ Vds	385	pF @ 25V
Power Dissipation (Max)	45	W (Tc)
Operating Temperature (TJ)	150	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the STB3N62K3 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The STB3N62K3 operates at 620V Vdss. Substitute parts must maintain voltage ratings equal to or greater than 620V to ensure safe operation in the original circuit topology.

Current Rating Compatibility: The device carries 2.7A continuous drain current. Substitute parts with equal or higher current ratings (2.7A or greater) are electrically compatible.

On-State Resistance (Rds On): The STB3N62K3 specifies 2.5Ω maximum at 1.4A and 10V gate drive. Lower Rds On values indicate improved performance; higher values increase conduction losses.

Gate Drive Voltage: All substitute parts operate at 10V drive voltage, maintaining gate drive compatibility.

Package Compatibility: The D2PAK (TO-263-3) surface mount package is the mechanical standard. All substitute parts must use identical packaging for PCB layout compatibility.

Product Status and Compliance: Active substitute parts with ROHS3 compliance and MSL 1 rating ensure long-term availability and environmental regulatory adherence.

The substitute parts listed below are grouped into two categories based on current rating: lower-current devices (2.2A) and higher-current devices (3.6A). Both categories maintain voltage ratings at or above the original specification.

Parameter Comparison

Parameter	STB3N62K3	IRFBC20SPBF	IRFBC20STRLPBF	IRFBC30ASPBF	IRFBC30ASTRLPBF	IRFBC30SPBF	IRFBC30STRLPBF
Manufacturer	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Vdss (V)	620	600	600	600	600	600	600
Id @ 25°C (A)	2.7	2.2	2.2	3.6	3.6	3.6	3.6
Rds On Max @ Id, Vgs (Ω)	2.5 @ 1.4A, 10V	4.4 @ 1.3A, 10V	4.4 @ 1.3A, 10V	2.2 @ 2.2A, 10V	2.2 @ 2.2A, 10V	2.2 @ 2.2A, 10V	2.2 @ 2.2A, 10V
Vgs(th) Max @ Id (V)	4.5 @ 50µA	4.0 @ 250µA	4.0 @ 250µA	4.5 @ 250µA	4.5 @ 250µA	4.0 @ 250µA	4.0 @ 250µA
Qg Max @ Vgs (nC)	13 @ 10V	18 @ 10V	18 @ 10V	23 @ 10V	23 @ 10V	31 @ 10V	31 @ 10V
Vgs Max (V)	±30	±20	±20	±30	±30	±20	±20
Ciss Max @ Vds (pF)	385 @ 25V	350 @ 25V	350 @ 25V	510 @ 25V	510 @ 25V	660 @ 25V	660 @ 25V
Power Dissipation Max (W)	45 (Tc)	50 (Tc)	50 (Tc)	74 (Tc)	74 (Tc)	74 (Tc)	74 (Tc)
Operating Temperature TJ (°C)	150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Voltage Rating Consideration: All substitute parts operate at 600V Vdss, which is 20V lower than the STB3N62K3 specification of 620V. In applications where the circuit operates at or below 600V, these substitutes are electrically compatible. Applications requiring the full 620V rating cannot use these substitutes.

Current Rating Selection:

The IRFBC20 series (IRFBC20SPBF and IRFBC20STRLPBF) carries 2.2A continuous drain current, which is 0.5A lower than the STB3N62K3. These devices are suitable for applications where the original design current does not exceed 2.2A.

The IRFBC30 series (IRFBC30ASPBF, IRFBC30ASTRLPBF, IRFBC30SPBF, and IRFBC30STRLPBF) carries 3.6A continuous drain current, exceeding the original 2.7A specification. These devices provide current margin and are suitable for applications requiring the full 2.7A or higher.

On-State Resistance Trade-offs:

IRFBC20 devices specify 4.4Ω Rds On, which is higher than the STB3N62K3 at 2.5Ω. This results in increased conduction losses and heat dissipation.

IRFBC30 devices specify 2.2Ω Rds On, which is lower than the STB3N62K3 at 2.5Ω. This results in reduced conduction losses and improved thermal performance.

Gate Voltage Compatibility:

IRFBC20 and IRFBC30SPBF/IRFBC30STRLPBF devices specify ±20V maximum gate voltage, which is lower than the STB3N62K3 at ±30V. Applications using gate drive voltages above ±20V cannot use these substitutes.

IRFBC30ASPBF and IRFBC30ASTRLPBF devices specify ±30V maximum gate voltage, matching the original specification.

Packaging and Availability:

All substitute parts use the D2PAK (TO-263-3) surface mount package, ensuring mechanical compatibility with existing PCB layouts.

IRFBC30ASTRLPBF and IRFBC30STRLPBF are available in Cut Tape (CT) packaging with the highest inventory levels (15,600 and 24,675 units respectively), providing supply continuity.

Compliance and Long-Term Support:

All substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original part's environmental specifications. All substitute parts maintain active product status, ensuring long-term availability and technical support.

Frequently Asked Questions (FAQ)

Q: Can IRFBC20 devices directly replace the STB3N62K3 in all applications?

A: IRFBC20 devices are suitable only for applications where the circuit operates at or below 600V and the drain current does not exceed 2.2A. The higher Rds On value (4.4Ω versus 2.5Ω) increases conduction losses. Applications requiring the full 2.7A current rating or 620V voltage rating must use IRFBC30 series devices.

Q: What is the difference between IRFBC30ASPBF and IRFBC30SPBF?

A: Both devices share identical electrical specifications (600V, 3.6A, 2.2Ω Rds On). The primary difference is gate voltage rating: IRFBC30ASPBF supports ±30V maximum gate voltage, while IRFBC30SPBF supports ±20V maximum gate voltage. Applications using gate drive voltages above ±20V require IRFBC30ASPBF. Additionally, IRFBC30ASPBF specifies REACH Affected status, while IRFBC30SPBF does not.

Q: What is the difference between Cut Tape (CT) and Tube packaging for IRFBC30 devices?

A: Cut Tape (CT) and Tube packaging are different delivery formats for the same electrical component. IRFBC30ASTRLPBF and IRFBC30STRLPBF are Cut Tape variants, while IRFBC30ASPBF and IRFBC30SPBF are Tube variants. Electrical performance is identical; packaging selection depends on assembly equipment and procurement requirements.

Q: Why do IRFBC30 devices have higher gate charge (Qg) than the STB3N62K3?

A: Gate charge is proportional to device current rating and input capacitance. IRFBC30 devices carry 3.6A versus the STB3N62K3 at 2.7A, and exhibit higher input capacitance (510-660 pF versus 385 pF). Higher gate charge requires longer switching times and increased gate drive power, but does not prevent functional substitution in applications with adequate gate drive capability.

Q: Can the STB3N62K3 be replaced with IRFBC30 devices in a 620V application?

A: No. IRFBC30 devices are rated for 600V maximum Vdss. Applications requiring 620V operation must retain the STB3N62K3 or identify alternative devices with 620V or higher voltage ratings. Using 600V-rated devices in 620V circuits exceeds the device voltage specification and creates reliability risk.

Q: Are all substitute parts suitable for high-frequency switching applications?

A: Gate charge and input capacitance affect switching speed. The STB3N62K3 specifies 13 nC gate charge and 385 pF input capacitance. IRFBC20 devices specify 18 nC and 350 pF respectively, while IRFBC30 devices specify 23-31 nC and 510-660 pF respectively. Applications with strict switching frequency requirements must account for these differences in gate drive circuit design.

Q: What is the significance of the ±30V gate voltage rating on IRFBC30ASPBF and IRFBC30ASTRLPBF?

A: The ±30V gate voltage rating matches the STB3N62K3 specification and accommodates gate drive circuits that use ±30V supplies. IRFBC20 and other IRFBC30 variants limited to ±20V cannot be used in circuits with ±30V gate drive without risking gate oxide damage. Verify gate drive voltage before selecting a substitute part.

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