STB36NM60ND Equivalent & Substitute Parts

Part Overview

The STB36NM60ND is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 29A continuous drain current at 25°C. This device is housed in a TO-263 (D2PAK) surface mount package and is part of the FDmesh™ II series. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and availability constraints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	29	A (Tc)
On-Resistance (Rds On Max) @ 14.5A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	5	V
Gate Charge (Qg Max) @ 10V	80.4	nC
Maximum Gate Voltage (Vgs Max)	±25	V
Input Capacitance (Ciss Max) @ 50V	2785	pF
Power Dissipation (Max)	190	W (Tc)
Operating Temperature (TJ)	150	°C
Package Type	TO-263-3, D2PAK	Surface Mount
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts for the STB36NM60ND are classified into three categories based on electrical and mechanical compatibility:

Parametric Equivalent (Direct Replacement): Parts that maintain identical or near-identical electrical specifications across all critical parameters. The STB34NM60ND qualifies as a parametric equivalent, sharing the same 600V Vdss, 29A continuous drain current, 110mOhm Rds On, 80.4nC gate charge, and 190W power dissipation. Both devices use the TO-263 (D2PAK) package and are RoHS3 compliant with MSL 1 rating.

Manufacturer Recommended Substitute (MFR Recommended): The STH60N099DM9-2AG is designated as the manufacturer-recommended substitute. This part maintains 600V Vdss and 29A continuous drain current specifications with identical TO-263 (D2PAK) packaging. The primary distinction is product status transition from obsolete to active, with packaging format change from Cut Tape to Tape & Reel.

Similar Performance Alternatives: Infineon Technologies CoolMOS™ series devices (IPB60R099CPAATMA1, IPB60R099CPATMA1, IPB60R099P7ATMA1, IPB60R099C6ATMA1, and IPB60R125C6ATMA1, IPB60R125CPATMA1) provide comparable electrical performance with variations in continuous drain current (25A to 37.9A), on-resistance (99mOhm to 125mOhm), gate charge (45nC to 119nC), and power dissipation (117W to 278W). All maintain 600V Vdss rating and TO-263 (D2PAK) package compatibility.

Substitution Criteria: All listed substitutes maintain the following critical parameters within acceptable engineering tolerance:

Drain-to-Source Voltage: 600V (fixed across all parts)
Package Type: TO-263 (D2PAK) surface mount
RoHS3 Compliance and MSL 1 rating
Operating temperature range: minimum 150°C TJ capability
Gate voltage rating: ±20V to ±25V compatibility

Parameter Comparison

Parameter	STB36NM60ND	STH60N099DM9-2AG	STB34NM60ND	IPB60R099CPAATMA1	IPB60R099CPATMA1	IPB60R099P7ATMA1	IPB60R099C6ATMA1	IPB60R125C6ATMA1	IPB60R125CPATMA1
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
Vdss (V)	600	600	600	600	600	600	600	600	600
Id @ 25°C (A)	29	29	29	31	31	31	37.9	30	25
Rds On Max @ 10V (mOhm)	110	-	110	105	99	99	99	125	125
Vgs(th) Max (V)	5	-	5	3.5	3.5	4	3.5	3.5	3.5
Qg Max @ 10V (nC)	80.4	-	80.4	80	80	45	119	96	70
Vgs Max (V)	±25	-	±25	±20	±20	±20	±20	±20	±20
Ciss Max (pF)	2785	-	2785	2800	2800	1952	2660	2127	2500
Power Dissipation Max (W)	190	-	190	255	255	117	278	219	208
Operating Temp TJ (°C)	150	-	150	-40 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Active	Not For New Designs	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Recommendation: STB34NM60ND

The STB34NM60ND is the optimal substitute for the obsolete STB36NM60ND. This part is a parametric equivalent manufactured by STMicroelectronics, maintaining identical electrical specifications across all critical parameters: 600V Vdss, 29A continuous drain current, 110mOhm on-resistance, 80.4nC gate charge, and 190W power dissipation. The device is currently in active production status with significantly higher inventory availability (19,270 pieces) compared to the original part. Both devices share identical RoHS3 compliance, MSL 1 rating, and TO-263 (D2PAK) package configuration, ensuring direct mechanical and thermal compatibility. The STB34NM60ND is qualified under AEC-Q101 automotive standards and carries REACH Unaffected status, maintaining full regulatory compliance for automotive and industrial applications.

Secondary Recommendation: STH60N099DM9-2AG

The STH60N099DM9-2AG is designated as the manufacturer-recommended substitute by STMicroelectronics. This part maintains the same 600V Vdss and 29A continuous drain current specifications with identical TO-263 (D2PAK) packaging. The primary advantage is active product status with moderate inventory availability (713 pieces). The packaging format transitions from Cut Tape to Tape & Reel, which may require supply chain adjustment but does not affect electrical or thermal performance. This part is suitable for applications where manufacturer-recommended status is a procurement requirement.

Alternative Consideration: IPB60R099CPAATMA1

The IPB60R099CPAATMA1 from Infineon Technologies provides enhanced performance characteristics with 31A continuous drain current (7% higher than STB36NM60ND), 105mOhm on-resistance (5% lower), and 255W power dissipation (34% higher). This device is in active production with high inventory availability (18,100 pieces). The CoolMOS™ CP series technology offers improved thermal performance and lower switching losses. This part is suitable for applications requiring higher current capacity or improved thermal margins. Operating temperature range extends to -40°C minimum, providing broader environmental compatibility.

Consideration for High-Current Applications: IPB60R099C6ATMA1

The IPB60R099C6ATMA1 offers the highest continuous drain current rating at 37.9A with 99mOhm on-resistance and 278W power dissipation. This device is classified as Not For New Designs but remains available (3,942 pieces). Selection of this part is appropriate only when existing designs require higher current capacity and long-term supply agreements are established.

Regulatory and Compliance Considerations:

All recommended substitutes maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating. The STB34NM60ND and STH60N099DM9-2AG retain REACH Unaffected status identical to the original part. Infineon devices carry REACH Unaffected status. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, maintaining consistent export and tariff classification.

Frequently Asked Questions (FAQ)

Q: Can the STB34NM60ND be used as a direct replacement for the STB36NM60ND without circuit modification?

A: Yes. The STB34NM60ND is a parametric equivalent with identical electrical specifications across all critical parameters: 600V Vdss, 29A continuous drain current, 110mOhm on-resistance, 80.4nC gate charge, and 190W power dissipation. The TO-263 (D2PAK) package is mechanically and thermally identical. No circuit modifications are required.

Q: What is the difference between the STH60N099DM9-2AG and STB34NM60ND?

A: Both parts maintain identical electrical specifications and package type. The primary differences are: (1) STH60N099DM9-2AG is the manufacturer-recommended substitute with active status; (2) STB34NM60ND is a parametric equivalent with higher inventory availability; (3) STH60N099DM9-2AG uses Tape & Reel packaging while STB34NM60ND uses Cut Tape. Electrical performance and thermal characteristics are equivalent.

Q: Why do the Infineon CoolMOS™ parts have different current ratings than the STB36NM60ND?

A: Infineon CoolMOS™ series devices employ advanced semiconductor technology that enables higher current density and improved on-resistance characteristics. The IPB60R099CPAATMA1 delivers 31A (versus 29A) with lower on-resistance (105mOhm versus 110mOhm), resulting in reduced power dissipation and improved thermal performance. These differences reflect technology generation advancement rather than incompatibility. Selection depends on whether the application requires the higher current capacity or improved thermal margins.

Q: Are all substitute parts compatible with the same PCB layout and thermal management design?

A: Yes. All substitute parts use the TO-263 (D2PAK) package with identical pin configuration and thermal tab dimensions. PCB footprints and thermal interface designs are directly compatible. However, devices with higher power dissipation ratings (such as IPB60R099C6ATMA1 at 278W) may benefit from enhanced thermal management if operating at maximum power levels.

Q: What is the significance of "Not For New Designs" status on some substitute parts?

A: Parts marked "Not For New Designs" (such as IPB60R099CPATMA1, IPB60R099C6ATMA1, IPB60R125C6ATMA1, and IPB60R125CPATMA1) are in mature production phases with limited design support and potential future discontinuation. These parts are suitable for sustaining production of existing designs but should not be selected for new product development. Active status parts (STB34NM60ND, STH60N099DM9-2AG, IPB60R099CPAATMA1, IPB60R099P7ATMA1) are recommended for new designs.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STB36NM60ND specifies 80.4nC at 10V. Substitute parts range from 45nC (IPB60R099P7ATMA1) to 119nC (IPB60R099C6ATMA1). Lower gate charge reduces driver power dissipation and enables faster switching. Higher gate charge increases driver requirements but does not affect circuit functionality if the gate driver is rated for the specified charge. Verify gate driver specifications when selecting parts with significantly different gate charge values.

Q: What packaging format differences exist between substitutes?

A: The STB36NM60ND is supplied in Cut Tape (CT) format. Substitutes are available in Cut Tape (CT), Tape & Reel (TR), or Digi-Reel® formats. These are supply chain packaging variations that do not affect electrical or mechanical performance. Selection depends on production volume and assembly equipment compatibility. All parts use identical TO-263 (D2PAK) component packaging.

Q: Are there thermal performance differences between STMicroelectronics and Infineon devices?

A: Yes. Infineon CoolMOS™ devices generally exhibit lower on-resistance and higher power dissipation ratings due to advanced semiconductor technology. For example, IPB60R099CPAATMA1 delivers 255W dissipation versus 190W for STB36NM60ND at comparable current levels. This represents improved thermal efficiency and reduced junction temperature rise under load. Selection should consider application thermal requirements and available cooling capacity.

Q: Can the STB36NM60ND be replaced with a lower-current device such as IPB60R125CPATMA1 (25A)?

A: The IPB60R125CPATMA1 is rated for 25A continuous drain current, which is 14% lower than the STB36NM60ND (29A). This substitution is acceptable only if the application circuit operates at or below 25A maximum current. Exceeding this rating will cause device thermal stress and potential failure. Verify application current requirements before selecting lower-rated alternatives.

Q: What is the impact of different Vgs(th) threshold voltages on gate driver compatibility?

A: The STB36NM60ND specifies Vgs(th) maximum of 5V at 250µA. Most Infineon substitutes specify 3.5V at higher current levels (960µA to 1.21mA). Lower threshold voltage enables faster switching response and reduced gate driver power dissipation. This difference does not affect circuit functionality but may improve switching performance. Verify gate driver output voltage specifications to ensure adequate overdrive margin above the device threshold voltage.

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