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STB35NF10T4 N-Channel MOSFET 100V 40A D2PAK Equivalent & Substitute Parts
Part Overview
The STB35NF10T4 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ II series, rated for 100V drain-to-source voltage and 40A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and current manufacturing availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 40 | A (Tc) |
| On-State Resistance (Rds On) @ Id, Vgs | 35 mOhm @ 17.5A, 10V | — |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 55 | nC @ 10V |
| Maximum Gate Voltage (Vgs) | ±20 | V |
| Input Capacitance (Ciss) @ Vds | 1550 | pF @ 25V |
| Power Dissipation (Max) | 115 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the STB35NF10T4 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:
Critical Matching Parameters:
- FET Type: N-Channel (required)
- Drain-to-Source Voltage (Vdss): 100V minimum (100V or higher acceptable)
- Continuous Drain Current (Id): 40A or greater at 25°C
- Package Type: D2PAK (TO-263-3) surface mount (required for mechanical compatibility)
- Operating Temperature Range: -55°C to 175°C (required)
Secondary Compatibility Parameters:
- On-State Resistance (Rds On): Lower or equivalent values indicate improved performance
- Gate Threshold Voltage (Vgs(th)): Compatibility within ±1V range acceptable
- Maximum Gate Voltage (Vgs): ±20V or greater acceptable
- RoHS Compliance: ROHS3 Compliant (required)
Substitute parts are grouped into two categories: Direct Equivalents (matching all critical parameters within tolerance) and Higher-Performance Alternatives (exceeding current rating or offering improved thermal characteristics while maintaining voltage and package compatibility).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Power Dissipation (W) | Product Status | Package |
|---|---|---|---|---|---|---|---|---|
| STB35NF10T4 | STMicroelectronics | 100 | 40 (Tc) | 35 @ 17.5A, 10V | 55 @ 10V | 115 (Tc) | Obsolete | D2PAK |
| BUK9640-100A,118 | Nexperia USA Inc. | 100 | 39 (Tc) | 39 @ 25A, 10V | 48 @ 5V | 158 (Tc) | Active | D2PAK |
| FDB3682 | onsemi | 100 | 32 (Tc) | 36 @ 32A, 10V | 28 @ 10V | 95 (Tc) | Active | D2PAK |
| FQB44N10TM | onsemi | 100 | 43.5 (Tc) | 39 @ 21.75A, 10V | 62 @ 10V | 146 (Tc) | Active | D2PAK |
| HUF75631S3ST | onsemi | 100 | 33 (Tc) | 40 @ 33A, 10V | 79 @ 20V | 120 (Tc) | Active | D2PAK |
| IRF1310NSTRLPBF | Infineon Technologies | 100 | 42 (Tc) | 36 @ 22A, 10V | 110 @ 10V | 160 (Tc) | Active | D2PAK |
| IRF3415STRLPBF | Infineon Technologies | 150 | 43 (Tc) | 42 @ 22A, 10V | 200 @ 10V | 200 (Tc) | Active | D2PAK |
| IRF3710STRLPBF | Infineon Technologies | 100 | 57 (Tc) | 23 @ 28A, 10V | 130 @ 10V | 200 (Tc) | Active | D2PAK |
| IRF3710ZSTRLPBF | Infineon Technologies | 100 | 59 (Tc) | 18 @ 35A, 10V | 120 @ 10V | 160 (Tc) | Active | D2PAK |
| IRF540NSTRLPBF | Infineon Technologies | 100 | 33 (Tc) | 44 @ 16A, 10V | 71 @ 10V | 130 (Tc) | Active | D2PAK |
| IRFS4615TRLPBF | Infineon Technologies | 150 | 33 (Tc) | 42 @ 21A, 10V | 40 @ 10V | 144 (Tc) | Active | D2PAK |
Engineering Selection Recommendations
Direct Substitutes (100V Rating, 40A+ Current):
The following parts satisfy all critical electrical and mechanical requirements for direct substitution:
-
BUK9640-100A,118 (Nexperia): 39A continuous current, 100V Vdss, D2PAK package. Active product status with AEC-Q101 automotive qualification. Slightly lower on-state resistance (39 mOhm) and higher power dissipation capability (158W) provide improved thermal performance.
-
FQB44N10TM (onsemi): 43.5A continuous current, 100V Vdss, D2PAK package. Active product status. Exceeds current rating with comparable on-state resistance (39 mOhm) and enhanced power dissipation (146W).
-
IRF1310NSTRLPBF (Infineon): 42A continuous current, 100V Vdss, D2PAK package. Active product status. Meets current requirement with 36 mOhm on-state resistance and 160W power dissipation capability.
-
IRF3710STRLPBF (Infineon): 57A continuous current, 100V Vdss, D2PAK package. Active product status. Significantly exceeds current rating with superior on-state resistance (23 mOhm) and 200W power dissipation.
-
IRF3710ZSTRLPBF (Infineon): 59A continuous current, 100V Vdss, D2PAK package. Active product status. Highest current capability with lowest on-state resistance (18 mOhm) and 160W power dissipation.
Higher Voltage Alternatives (150V Rating):
For applications requiring enhanced voltage margin:
-
IRF3415STRLPBF (Infineon): 150V Vdss, 43A continuous current, D2PAK package. Active product status. Suitable for designs requiring voltage headroom beyond 100V specification.
-
IRFS4615TRLPBF (Infineon): 150V Vdss, 33A continuous current, D2PAK package. Active product status. Provides voltage margin with reduced current capability.
Lower Current Alternative:
- FDB3682 (onsemi): 32A continuous current, 100V Vdss, D2PAK package. Active product status. Acceptable for applications with reduced current requirements, offering lower power dissipation (95W).
All recommended substitutes maintain RoHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and operating temperature range of -55°C to 175°C.
Frequently Asked Questions (FAQ)
Q: Can the STB35NF10T4 be replaced with a lower current-rated device?
A: No. The STB35NF10T4 is rated for 40A continuous drain current. Substitute parts must equal or exceed this rating to maintain circuit performance and thermal stability. The FDB3682 (32A) is not suitable for direct replacement in applications requiring the full 40A specification.
Q: What is the significance of on-state resistance (Rds On) differences between substitute parts?
A: On-state resistance directly affects power dissipation and heat generation. Lower Rds On values (such as IRF3710ZSTRLPBF at 18 mOhm) reduce conduction losses and improve thermal performance. Higher Rds On values (such as IRF540NSTRLPBF at 44 mOhm) increase power dissipation and may require enhanced thermal management.
Q: Are 150V-rated devices (IRF3415STRLPBF, IRFS4615TRLPBF) compatible with 100V circuit designs?
A: Yes. Devices rated for higher drain-to-source voltage are electrically compatible with 100V applications. The higher voltage rating provides additional safety margin and does not degrade performance in 100V circuits. However, verify that gate drive circuitry and control logic remain compatible.
Q: What is the difference between Tc (case temperature) and Ta (ambient temperature) current ratings?
A: Tc (case temperature) ratings assume controlled thermal conditions at the device case. Ta (ambient temperature) ratings assume worst-case ambient conditions without active cooling. For the STB35NF10T4, the 40A rating is specified at Tc (case temperature). Substitute parts with Tc ratings are directly comparable; Ta ratings indicate reduced current capability under ambient conditions.
Q: Can I use IRF3710STRLPBF or IRF3710ZSTRLPBF as direct replacements despite their higher current ratings?
A: Yes. Higher current ratings indicate improved performance characteristics and do not create compatibility issues. These devices operate safely at the STB35NF10T4's 40A specification. The lower on-state resistance (23 mOhm and 18 mOhm respectively) provides reduced power dissipation and improved thermal performance.
Q: Is the D2PAK package identical across all substitute parts?
A: Yes. All substitute parts use the D2PAK (TO-263-3) surface mount package with identical pinout and mechanical dimensions. Direct PCB footprint compatibility is confirmed for all listed substitutes.
Q: What is the impact of gate charge (Qg) differences on circuit design?
A: Gate charge affects gate drive circuit requirements and switching speed. Higher Qg values (such as IRF1310NSTRLPBF at 110 nC) require greater gate drive current or longer switching times. Lower Qg values (such as FDB3682 at 28 nC) enable faster switching with reduced gate drive requirements. Verify gate drive circuit compatibility for parts with significantly different Qg specifications.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts are RoHS3 compliant and MSL Level 1 (unlimited moisture sensitivity), matching the STB35NF10T4 compliance status.
Q: Which substitute offers the best thermal performance?
A: IRF3710ZSTRLPBF provides the lowest on-state resistance (18 mOhm @ 35A, 10V) and highest current rating (59A), resulting in the lowest conduction losses and superior thermal performance. IRF3710STRLPBF offers comparable thermal benefits with 23 mOhm on-state resistance.
Q: Can I use BUK9640-100A,118 in automotive applications?
A: Yes. BUK9640-100A,118 carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. Other substitutes are industrial-grade components without automotive certification.
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