STB34N50DM2AG N-Channel 500V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The STB34N50DM2AG is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 26A continuous drain current at 25°C. This device is housed in a TO-263 (D2PAK) surface mount package and is qualified to AEC-Q101 automotive standards. The part is designated as Last Time Buy, indicating discontinued production status. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for applications requiring this device or compatible alternatives.

Substiute Parts

STB34N50DM2AG

STMicroelectronicsIn Stock: 989STB34N50DM2AG Datasheet

Current PartRFQ

STB45N50DM2AG

STMicroelectronicsIn Stock: 3343STB45N50DM2AG Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STB34N50DM2AG is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 500V minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package Type: TO-263 (D2PAK) surface mount
• Gate Threshold Voltage (Vgs th): 5V @ 250µA
• Maximum Gate Voltage (Vgs Max): ±25V
• Operating Temperature Range: -55°C to 150°C
• Grade: Automotive
• Qualification: AEC-Q101
• RoHS Status: ROHS3 Compliant

Performance Parameters Allowing Substitution: Substitute parts must maintain or exceed the following electrical characteristics:

• Continuous Drain Current (Id): Equal to or greater than 26A
• On-State Resistance (Rds On): Equal to or lower than 120mOhm at specified conditions
• Power Dissipation: Equal to or greater than 190W
• Gate Charge (Qg): Equal to or lower than 44nC @ 10V
• Input Capacitance (Ciss): Equal to or lower than 1850pF @ 100V

The STB45N50DM2AG qualifies as a direct substitute based on these criteria. It maintains identical voltage ratings, package configuration, and automotive qualification while providing enhanced current handling (35A vs. 26A), improved on-state resistance (84mOhm vs. 120mOhm), and increased power dissipation capability (250W vs. 190W).

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STB45N50DM2AG

The STB45N50DM2AG is the recommended substitute for the STB34N50DM2AG based on the following engineering criteria:

Compliance and Qualification: Both devices maintain identical automotive-grade qualification (AEC-Q101) and ROHS3 compliance status, ensuring regulatory equivalence for automotive and industrial applications. The STB45N50DM2AG carries Active product status, providing long-term availability and supply chain continuity compared to the Last Time Buy status of the STB34N50DM2AG.

Electrical Compatibility: The substitute part maintains all critical voltage and thermal specifications: 500V Vdss rating, 5V gate threshold voltage, ±25V maximum gate voltage, and -55°C to 150°C operating temperature range. These parameters ensure direct functional compatibility in existing circuit designs.

Performance Enhancement: The STB45N50DM2AG provides superior electrical performance characteristics. The increased continuous drain current rating (35A vs. 26A) and reduced on-state resistance (84mOhm vs. 120mOhm) enable improved current handling and reduced conduction losses. The higher power dissipation rating (250W vs. 190W) accommodates thermal requirements in demanding applications.

Package and Mounting: Both devices utilize identical TO-263 (D2PAK) surface mount packaging with two leads plus tab configuration, ensuring mechanical and thermal interface compatibility without PCB redesign.

Substitution Validity: The STB45N50DM2AG operates within all specified parameter ranges of the STB34N50DM2AG while providing enhanced performance margins. No circuit modifications are required for substitution.

Frequently Asked Questions (FAQ)

Q: Can the STB45N50DM2AG be used as a direct replacement for the STB34N50DM2AG without circuit modifications?

A: Yes. The STB45N50DM2AG maintains identical voltage ratings (500V Vdss), gate threshold voltage (5V), maximum gate voltage (±25V), operating temperature range (-55°C to 150°C), and package configuration (TO-263 D2PAK). All critical electrical parameters are equivalent or superior, requiring no circuit redesign.

Q: What are the key differences between these two devices?

A: The primary differences are continuous drain current (35A vs. 26A), on-state resistance (84mOhm vs. 120mOhm at specified conditions), power dissipation capability (250W vs. 190W), gate charge (57nC vs. 44nC), and input capacitance (2600pF vs. 1850pF). The STB45N50DM2AG provides enhanced performance across all these parameters.

Q: Are both devices qualified to the same automotive standards?

A: Yes. Both the STB34N50DM2AG and STB45N50DM2AG carry AEC-Q101 automotive qualification and ROHS3 compliance, ensuring equivalent regulatory acceptance for automotive applications.

Q: What is the significance of the Last Time Buy status for the STB34N50DM2AG?

A: Last Time Buy status indicates that STMicroelectronics has discontinued production of the STB34N50DM2AG. The STB45N50DM2AG, with Active product status, provides a viable long-term alternative with assured supply availability.

Q: Are the packaging and pinout configurations identical?

A: Yes. Both devices use the TO-263 (D2PAK) surface mount package with two leads plus tab configuration. Pinout and thermal interface characteristics are identical, permitting direct PCB substitution without layout modifications.

Q: How do the gate charge and input capacitance differences affect circuit design?

A: The STB45N50DM2AG exhibits higher gate charge (57nC vs. 44nC) and input capacitance (2600pF vs. 1850pF). These parameters influence gate drive circuit design and switching speed characteristics. Applications with tight gate drive timing requirements should evaluate these differences, though both devices operate within standard automotive gate drive specifications.

Q: Can the STB34N50DM2AG be substituted with other N-Channel 500V MOSFETs from different manufacturers?

A: Substitution with devices from other manufacturers requires verification of all critical parameters: 500V Vdss rating, N-Channel configuration, 5V gate threshold voltage, ±25V maximum gate voltage, TO-263 (D2PAK) package, AEC-Q101 qualification, and -55°C to 150°C operating temperature range. Only devices meeting all these specifications are considered equivalent.

Q: What inventory status should be considered when selecting between these parts?

A: The STB34N50DM2AG has 966 pieces in stock but carries Last Time Buy status with no future production. The STB45N50DM2AG has 3300 pieces in stock with Active product status, ensuring continued availability for future procurement cycles.